公开(公告)号：US09076665B2

公开(公告)日：2015-07-07

申请号：US12517230

申请日：2007-12-06

申请人： Eric D. Stern ,  Tarek M. Fahmy ,  Mark A. Reed ,  James F. Klemic

发明人： Eric D. Stern ,  Tarek M. Fahmy ,  Mark A. Reed ,  James F. Klemic

IPC分类号： G01N27/414 ,  H01L29/06 ,  B82Y10/00 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G01N27/4146 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/16

摘要： The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (LD) of the semiconductor material of which the semiconductor layer is formed.

摘要翻译： 本文所述的系统和方法包括适于感测化学和生物物质的传感器。 传感器包括形成在衬底中或衬底上的半导体层和形成在半导体层中的具有纳米级尺寸的沟道，其中该结构在半导体层上的第一接触和第二接触之间形成导电通路。 在某些优选实施例中，纳米尺度通道具有具有有效宽度和暴露侧面的梯形横截面，其中有效宽度被选择为具有与其半导体材料的德拜长度（LD）相同的数量级 形成半导体层。

公开(公告)号：US20150107999A1

公开(公告)日：2015-04-23

申请号：US14582525

申请日：2014-12-24

申请人： Monika Weber ,  Mark A. Reed

发明人： Monika Weber ,  Siu Lung Lo ,  Hazael Fabrizio Montanaro Ochoa ,  Christopher Daniel Yerino ,  Mark A. Reed

IPC分类号： G01N27/447 ,  G01N27/414

CPC分类号： B01L3/502753 ,  B01L2300/0874 ,  B01L2400/0406 ,  B01L2400/0424 ,  B01L2400/0487 ,  B03C5/005 ,  B03C5/024 ,  B03C2201/18 ,  B03C2201/26 ,  G01N27/4145

摘要： An apparatus for separating an analyte from a test sample, such as bacteria from blood components, based on their dielectric properties, localizing or condensing the analyte, flushing substantially all remaining waste products from the test sample, and detecting low concentrations of the analyte. The module array includes a plurality of microfluidic channels with connecting microfluidic waste channels for directing undesired material away from the analyte. An electric field is applied causing a positive dielectrophoretic force to the analyte to capture the analyte. The electric field is applied to at least one electrode having a plurality of concentric rings or concentric arcs extending radially outwards from a center point, electrically connected to a voltage source such that when voltage is applied to the at least one electrode, the concentric rings or concentric arcs alternate in voltage potential.

摘要翻译： 基于它们的介电特性，将分析物从测试样品（例如细菌）中分离出来，将分析物定位或冷凝，基本上将所有剩余废物从测试样品中冲洗，并检测低浓度的分析物。 模块阵列包括具有连接微流体废物通道的多个微流体通道，用于将不期望的材料引导离开分析物。 施加电场使得分析物具有正的介电电泳力以捕获分析物。 电场被施加到至少一个电极，该至少一个电极具有多个同心圆或同心圆弧，其中心点从中心点径向向外延伸，电中连接到电压源，使得当电压施加到至少一个电极时，同心环或 同心弧交替电压。

公开(公告)号：US06430511B1

公开(公告)日：2002-08-06

申请号：US09488339

申请日：2000-01-20

申请人： James M Tour ,  Mark A Reed ,  Jorge M Seminario ,  David L Allara ,  Paul S Weiss

发明人： James M Tour ,  Mark A Reed ,  Jorge M Seminario ,  David L Allara ,  Paul S Weiss

IPC分类号： G01N3348

CPC分类号： H01L51/0595 ,  B82Y10/00 ,  B82Y30/00 ,  G06N99/007 ,  G11C13/0014 ,  G11C13/025 ,  G11C2211/5614 ,  G11C2213/14 ,  G11C2213/71 ,  G11C2213/81 ,  H01L51/0046 ,  H01L51/005 ,  H01L51/0052 ,  Y10S977/708 ,  Y10S977/731 ,  Y10S977/839 ,  Y10S977/94 ,  Y10S977/943

摘要： A molecular computer is formed by establishing arrays of spaced-apart input and output pins on opposing sides of a containment, injecting moleware in solution into the containment and then allowing the moleware to bridge the input and output pins. Moleware includes molecular alligator clip-bearing 2-, 3-, and molecular 4-, or multi-terminal wires, carbon nanotube wires, molecular resonant tunneling diodes, molecular switches, molecular controllers that can be modulated via external electrical or magnetic fields, massive interconnect stations based on single nanometer-sized particles, and dynamic and static random access memory (DRAM and SRAM) components composed of molecular controller/nanoparticle or fullerene hybrids. The current-voltage characteristics that result from the bridging between input and output arrays can be ascertained using another computer to identify the bundles of inputs and corresponding outputs that provide a truth table for the specific functions of the computer.

摘要翻译： 通过在容纳物的相对侧上建立间隔开的输入和输出销排列形成分子计算机，将解决方案中的摩擦件注入到容纳物中，然后允许鼹鼠桥接输入和输出销。 Moleware包括分子鳄鱼夹2，3-和分子4-或多端子线，碳纳米管线，分子谐振隧道二极管，分子开关，可通过外部电场或磁场调制的分子控制器，大量 基于单个纳米尺寸粒子的互连站，以及由分子控制器/纳米颗粒或富勒烯混合物组成的动态和静态随机存取存储器（DRAM和SRAM）组件。 由输入和输出阵列之间的桥接产生的电流 - 电压特性可以使用另一台计算机确定，以识别输入束和相应的输出，为计算机的特定功能提供真值表。

公开(公告)号：US06375115B1

公开(公告)日：2002-04-23

申请号：US09478709

申请日：2000-01-06

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： B65H1606

CPC分类号： B65H49/32 ,  B25H3/02 ,  B65H2701/533

摘要： An electrician's combination tool box and wire caddy provides a support for multiple spools of wire of different size or gauge, and a storage area below the spools for holding articles and tools needed by the electrician during the wiring of a building. The spools are positioned well above the storage area, enabling a user to access articles in the receptacles, even when spools are being handled to pay out wire.

摘要翻译： 电工的组合工具箱和钢丝球架可以为建筑物接线期间电工所需的物品和工具提供支撑，用于支撑不同尺寸或规格的多根线轴和线轴下方的存放区域。 线轴定位在存储区域之上，使得用户能够访问插座中的物品，即使在处理线轴来支付线路时。

公开(公告)号：US5475341A

公开(公告)日：1995-12-12

申请号：US893092

申请日：1992-06-01

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： G11C13/02 ,  H01L25/00 ,  H01L27/02 ,  H01L29/76 ,  H01L29/88 ,  H01L51/30

CPC分类号： H01L51/0036 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/02 ,  H01L27/02 ,  H01L29/7606 ,  H01L29/882 ,  H01L51/0068 ,  H01L51/0595 ,  H01L2924/0002 ,  H01L51/0094 ,  Y10S977/936 ,  Y10S977/937

摘要： Microelectronic semiconductor integrated circuit devices integrated on a common substrate with molecular electronic devices, having barrier-well-barrier structure with the well being conductive oligomer.

摘要翻译： 集成在具有分子电子器件的公共衬底上的微电子半导体集成电路器件，具有阱阱阻挡结构，阱是导电低聚物。

公开(公告)号：US4969018A

公开(公告)日：1990-11-06

申请号：US626807

申请日：1984-07-02

申请人： Mark A. Reed

发明人： Mark A. Reed

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/06 ,  H01L29/15 ,  H01L29/32 ,  H01L29/66 ,  H01L29/68 ,  H01L29/76 ,  H01L29/778 ,  H01L29/786 ,  H01L29/812

CPC分类号： B82Y10/00 ,  H01L29/151 ,  H01L29/158 ,  H01L29/32 ,  H01L29/7606 ,  Y10S977/94

摘要： A new kind of electronic logic circuit, wherein potential wells (e.g. islands of GaAs in an AlGaAs lattice) are made small enough that the energy levels of carriers within the wells are discretely quantized. This means that, when the bias between the wells is adjusted to align energy levels of the two wells, tunneling will occur very rapidly, whereas when the energy levels are not aligned, tunneling will be greatly reduced. In particular, the wells are optimized to have sharp enough resonant tunneling peaks that the change in potential caused by the difference between the number of carriers stored between two adjacent tunnel wells is itself enough to permit or preclude resonant tunneling. Thus, a tremendous variety of logic functions, including all primitive Boolean functions can be embodied in this logic.

摘要翻译： 一种新型的电子逻辑电路，其中势阱（例如，AlGaAs晶格中的GaAs岛）被制成足够小以使得阱内的载流子的能级离散量化。 这意味着当孔之间的偏压被调整以对准两个井的能量水平时，隧穿将非常迅速地发生，而当能量水平不对准时，隧道效应将大大降低。 特别地，井被优化以具有足够的谐振隧道峰值，由两个相邻隧道井之间存储的载流子之间的差异引起的电位变化本身足以允许或排除谐振隧穿。 因此，包括所有原始布尔函数在内的各种各样的逻辑功能可以体现在这个逻辑中。

公开(公告)号：US4783427A

公开(公告)日：1988-11-08

申请号：US830775

申请日：1986-02-18

申请人： Mark A. Reed ,  Robert T. Bate

发明人： Mark A. Reed ,  Robert T. Bate

IPC分类号： H01L21/20 ,  H01L21/8252 ,  H01L29/15 ,  H01L29/76 ,  H01L29/203 ,  H01L21/205 ,  H01L21/306 ,  H01L29/205

CPC分类号： B82Y10/00 ,  H01L21/8252 ,  H01L29/158 ,  H01L29/7606 ,  Y10S438/962 ,  Y10S438/979

摘要： The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in the AlGaAs matrix, and output contacts are then easily formed.

摘要翻译： 本发明教导了量子阱器件的制造方法，其中量子阱在AlGaAs基体中被配置为小的GaAs岛。 通常这些岛大致为立方体，每侧的尺寸约为100埃。 为了制造这些，生长n + n +外延GaAs结构，然后蚀刻到定义图案化的电子束两次，并且AlGaAs每次外延再生长。 这定义了AlGaAs基体中GaAs的量子阱，然后容易地形成输出触点。

公开(公告)号：US4705361A

公开(公告)日：1987-11-10

申请号：US802637

申请日：1985-11-27

申请人： Gary A. Frazier ,  William R. Frensley ,  Mark A. Reed

发明人： Gary A. Frazier ,  William R. Frensley ,  Mark A. Reed

IPC分类号： G02F1/35 ,  G02F1/015 ,  G02F1/017

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F2001/0156 ,  G02F2201/346

摘要： A light modulator and a high speed spatial light modulator (230) with each pixel (231) made of stacked quarter wavelength layers (232, 234) of heterogeneous material. Each layer (232, 234) is composed of periodic quantum well structures whose optical constants can be strongly perturbed by bias on control electrodes (240, 242). The control electrodes (240, 242) act to either remove light absorbing electrons from the layer or to inject them into each layer. The effect is to produce either a highly relecting mirror or a highly absorbing structure. The spatial light modulator (230) is compatible with semiconductor processing technology. Also, a modulator invoking the Burstein effect in the form of a stack of p-n diodes is disclosed.

摘要翻译： 光调制器和高速空间光调制器（230），每个像素（231）由不均匀材料的堆叠四分之一波长层（232,234）制成。 每个层（232,234）由周期性量子阱结构组成，其光学常数可以被控制电极（240,242）上的偏置强烈地扰动。 控制电极（240,242）用于从层中去除光吸收电子或将其注入每层。 效果是产生高反射镜或高吸收结构。 空间光调制器（230）与半导体处理技术兼容。 此外，公开了以p-n二极管的堆叠的形式调用Burstein效应的调制器。

公开(公告)号：US4575924A

公开(公告)日：1986-03-18

申请号：US626809

申请日：1984-07-02

申请人： Mark A. Reed ,  Robert T. Bate

发明人： Mark A. Reed ,  Robert T. Bate

IPC分类号： H01L29/80 ,  H01L21/20 ,  H01L27/10 ,  H01L29/06 ,  H01L29/15 ,  H01L29/68 ,  H01L29/76 ,  H01L21/203 ,  H01L21/302 ,  H01L29/161

CPC分类号： B82Y10/00 ,  H01L29/158 ,  H01L29/7606 ,  Y10S148/05 ,  Y10S148/11 ,  Y10S148/16 ,  Y10S148/169

摘要： The present invention teaches a process for fabrication of quantum-well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in an AlGaAs matrix, and output contacts are then easily formed.

摘要翻译： 本发明教导了一种用于制造量子阱器件的方法，其中量子阱被配置为AlGaAs基体中的小的GaAs岛。 通常这些岛大致为立方体，每侧的尺寸约为100埃。 为了制造这些，生长n + n +外延GaAs结构，然后蚀刻到定义图案化的电子束两次，并且AlGaAs每次外延再生长。 这定义了AlGaAs基体中GaAs的量子阱，然后容易地形成输出触点。