High-performance LED fabrication
    36.
    发明授权

    公开(公告)号:US10693041B2

    公开(公告)日:2020-06-23

    申请号:US16168311

    申请日:2018-10-23

    Applicant: SORAA, INC.

    Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

    HIGH EFFICIENCY GROUP-III NITRIDE LIGHT EMITTING DIODE

    公开(公告)号:US20190386178A1

    公开(公告)日:2019-12-19

    申请号:US16446022

    申请日:2019-06-19

    Applicant: SORAA, INC.

    Abstract: A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

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