公开(公告)号：US20090310328A1

公开(公告)日：2009-12-17

申请号：US12394241

申请日：2009-02-27

申请人： Chikara KOBAYASHI ,  Seiji Nagai ,  Yutaka Kawahigashi

发明人： Chikara KOBAYASHI ,  Seiji Nagai ,  Yutaka Kawahigashi

IPC分类号： H05K7/00

CPC分类号： H04M1/0216

摘要： A folding electronic device includes a fixed casing, a movable casing, and a hinge device connecting the fixed casing and the movable casing to allow rotational movement of the movable casing. The movable casing is openable with respect to the fixed casing. The hinge device has an axis extending over a land portion of the fixed casing and a land portion of the movable casing. A projection is provided in any of the following: at least one of end faces of the land portion of the fixed casing and an end face, opposed to one of the end faces, of the land portion of the movable casing. As the movable casing changes from a closed state to an open state, a gap between the projection and an end face opposed to the projection is increased.

摘要翻译： 折叠电子装置包括固定壳体，可动壳体和连接固定壳体和可动壳体以允许可动壳体旋转运动的铰链装置。 可动壳体相对于固定壳体是可打开的。 铰链装置具有在固定壳体的陆部上延伸的轴线和可动壳体的陆部。 在下列任何一个中提供突起：固定壳体的陆部的至少一个端面和与可动壳体的陆部的一个端面相对的端面。 当可动壳体从关闭状态变为打开状态时，突起与与突起相对的端面之间的间隙增加。

公开(公告)号：US20080223288A1

公开(公告)日：2008-09-18

申请号：US12073904

申请日：2008-03-11

申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/12

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

公开(公告)号：US06844246B2

公开(公告)日：2005-01-18

申请号：US10472261

申请日：2002-03-19

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Masahito Kodama

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Masahito Kodama

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A GaN layer 32 grows in vertical direction on a GaN layer 31 where neither a first mask 41m nor a second mask 42m is formed. When thickness of the GaN layer 32 becomes larger than that of the first mask 41m, it began to grown in lateral direction so as to cover the first mask 41m. Because the second mask 42m is not formed on the upper portion of the first mask 41m, the GaN layer 32 grows in vertical direction. On the contrary, at the upper region of the GaN layer 31 where the mask 41m is not formed, the second mask 42m is formed like eaves, the growth of the GaN layer 32 stops and threading dislocations propagated with vertical growth also stops there. The GaN layer 32 grows in vertical direction so as to penetrate the region where neither the first mask 41m nor the second mask 42m is formed. When the height of the GaN layer 32 becomes larger than that of the second mask 42m, the GaN layer 32 begins to grow in lateral direction again and covers the second mask 42m. After the GaN layer 32 completely covers the second mask 42m, it began to grow in vertical direction.

摘要翻译： GaN层32在不形成第一掩模41m和第二掩模42m的GaN层31上沿垂直方向生长。 当GaN层32的厚度大于第一掩模41m的厚度时，它开始在横向上生长以覆盖第一掩模41m。 因为第二掩模42m未形成在第一掩模41m的上部，所以GaN层32在垂直方向上生长。 相反，在未形成掩模41m的GaN层31的上部区域，第二掩模42m形成为像屋檐，GaN层32的生长停止，并且随着垂直生长而传播的穿透位错也停止。 GaN层32在垂直方向上生长，从而穿过第一掩模41m和第二掩模42m都不形成的区域。 当GaN层32的高度变得大于第二掩模42m的高度时，GaN层32再次在横向方向上开始覆盖第二掩模42m。 在GaN层32完全覆盖第二掩模42m之后，它开始在垂直方向上生长。

公开(公告)号：US06821800B2

公开(公告)日：2004-11-23

申请号：US10326398

申请日：2002-12-23

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06645295B1

公开(公告)日：2003-11-11

申请号：US09566917

申请日：2000-05-09

申请人： Masayoshi Koike ,  Seiji Nagai

发明人： Masayoshi Koike ,  Seiji Nagai

IPC分类号： C30B2504

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A buffer layer 2 made of aluminum nitride (AlN) is formed on a substrate 1 and is formed into an island pattern such as a dot pattern, a striped pattern, or a grid pattern such that substrate-exposed portions are formed in a scattered manner. A group III nitride compound semiconductor 3 grows epitaxially on the buffer layer 2 in a longitudinal direction, and grows epitaxially on the substrate-exposed portions in a lateral direction. As a result, a group III nitride compound semiconductor 3 which has little or no feedthrough dislocations 4 is obtained. Because the region where the group III nitride compound semiconductor 3 grows epitaxially in a lateral direction, on region 32, has excellent crystallinity, forming a group III nitride compound semiconductor device on the upper surface of the region results in improved device characteristics.

摘要翻译： 在基板1上形成由氮化铝（AlN）构成的缓冲层2，形成为点阵图案，条纹图案或格栅图案等岛状图案，使得基板曝光部分以散射方式形成 。 III族氮化物化合物半导体3沿纵向在外延生长在缓冲层2上，并沿横向在外延生长在基板暴露部分上。 结果，得到几乎没有或没有穿穿位错4的III族氮化物化合物半导体3。 由于III族氮化物半导体3在横向上外延生长的区域，在区域32上具有优异的结晶性，所以在该区域的上表面上形成III族氮化物化合物半导体器件导致改进的器件特性。

公开(公告)号：US06541293B2

公开(公告)日：2003-04-01

申请号：US10158830

申请日：2002-06-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2 >0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US06420733B2

公开(公告)日：2002-07-16

申请号：US09922687

申请日：2001-08-07

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light- emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 在制造半导体发光器件的方法中，包括以下步骤：形成第一半导体层; 通过将由InY1Ga1-Y1N（Y1> = 0）构成的阻挡层和由InY2Ga1-Y2N（Y2> Y1和Y2> 0）构成的量子阱层层叠在第一半导体上形成超晶格结构的发光层 层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他势垒层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US5811319A

公开(公告)日：1998-09-22

申请号：US622045

申请日：1996-03-26

申请人： Masayoshi Koike ,  Seiji Nagai ,  Shiro Yamasaki ,  Masanori Murakami ,  Katsuyuki Tsukui ,  Hidenori Ishikawa

发明人： Masayoshi Koike ,  Seiji Nagai ,  Shiro Yamasaki ,  Masanori Murakami ,  Katsuyuki Tsukui ,  Hidenori Ishikawa

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/452 ,  H01L33/007

摘要： A surface of a compound semiconductor having at least gallium (Ga) and nitride (N) forms a target for sputtering with inert gas, so that oxide and other attachments are removed therefrom. The sputtering the surface is carried out until a disruption layer is formed which has atomically disordered and bumpy arrangement. Following the sputtering process, metal deposition by sputtering and alloying are carried out under vacuum in the same chamber used for the sputtering processes. As a result, the contact resistance between the surface layer and the deposited electrode layer is decreased.

摘要翻译： 至少具有镓（Ga）和氮化物（N）的化合物半导体的表面形成用惰性气体溅射的靶，从而除去氧化物和其它附着物。 进行表面的溅射，直到形成具有原子上无序和颠簸布置的破坏层。 在溅射工艺之后，通过溅射和合金化的金属沉积在用于溅射工艺的相同的室中在真空下进行。 结果，表面层和沉积电极层之间的接触电阻降低。

公开(公告)号：US4695167A

公开(公告)日：1987-09-22

申请号：US786858

申请日：1985-10-11

申请人： Masashi Mori ,  Shingo Nonaka ,  Seiji Nagai

发明人： Masashi Mori ,  Shingo Nonaka ,  Seiji Nagai

IPC分类号： B05B7/04 ,  B05B7/14 ,  B05B7/24 ,  B28C5/12 ,  C04B35/66 ,  F27D1/16 ,  B01F7/08 ,  B01F15/02

CPC分类号： B28C5/1276 ,  C04B35/66 ,  F27D1/1642 ,  C04B2111/00155

摘要： An apparatus for mixing and pumping slurry which is mixed with a refractory aggregate material in a gunning nozzle, characterized in that the apparatus is provided at its upper portion with a slurry mixing apparatus and its lower portion with a pumping apparatus which feeds the slurry under pressure by pump. The mixing apparatus includes an opening at the bottom thereof for the downward discharge of the slurry from the mixing apparatus. The pumping apparatus includes an opening at the top thereof positioned directly below the discharge opening of the mixing apparatus for delivering the slurry to the pump, thereby allowing the regulation and pumping of the slurry to be carried out simultaneously. The slurry is pumped to a gunning nozzle for admixture in a predetermined ratio with refractory aggregate.

摘要翻译： 一种用于混合和泵送浆料的装置，其与耐火聚集材料混合在喷枪中，其特征在于，所述装置在其上部设置有浆料混合装置，其下部具有在压力下进料浆料的泵送装置 通过泵。 该混合装置包括在其底部的开口，用于从混合装置向下排出浆料。 泵送装置包括在其顶部的开口，其位于混合装置的排放口的正下方，用于将浆料输送到泵中，从而允许同时调节和泵送浆料。 将浆料泵送到喷枪喷嘴中，以与预定比例与耐火聚集体混合。

公开(公告)号：US20110259261A1

公开(公告)日：2011-10-27

申请号：US13177057

申请日：2011-07-06

申请人： Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

发明人： Makoto IWAI ,  Shuhei Higashihara ,  Yasuo Kitaoka ,  Yusuke Mori ,  Takayuki Sato ,  Seiji Nagai

IPC分类号： C30B9/06 ,  C30B25/00

CPC分类号： C30B29/403 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002

摘要： It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.

摘要翻译： 本发明提供一种通过助熔剂从包含钠的熔体中生长单晶的方法，其特征在于，在由钇 - 铝石榴石制成的反应容器中含有助熔剂。 与使用氧化铝或氧化钇容器的情况相比，可以成功地获得能够显着降低氧和硅的掺入量的单晶，可以降低残留载流子密度，并且可以提高电子迁移率和电阻率。