公开(公告)号：US06589888B2

公开(公告)日：2003-07-08

申请号：US10238195

申请日：2002-09-09

Applicant: Srinivas Nemani ,  Li-Qun Xia ,  Ellie Yieh

Inventor： Srinivas Nemani ,  Li-Qun Xia ,  Ellie Yieh

IPC: H01L2131

CPC classification number: H01L21/76829 ,  C23C16/325 ,  C23C16/505 ,  H01L21/0276 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/7681

Abstract: A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture of a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RE) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.

Abstract translation: 公开了一种用于形成用于集成电路制造的碳化硅层的方法。 碳化硅层通过在电场存在下使硅源，碳源和惰性气体的气体混合物反应而形成。 使用混合频率射频（RE）功率产生电场。 碳化硅层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，碳化硅层用作用于制造集成电路结构的硬掩模，例如镶嵌结构。 在另一个集成电路制造工艺中，碳化硅层用作用于DUV光刻的抗反射涂层（ARC）。

公开(公告)号：US06537733B2

公开(公告)日：2003-03-25

申请号：US09793818

申请日：2001-02-23

Applicant: Francimar Campana ,  Srinivas Nemani ,  Michael Chapin ,  Shankar Venkataraman

Inventor： Francimar Campana ,  Srinivas Nemani ,  Michael Chapin ,  Shankar Venkataraman

IPC: C23C1632

CPC classification number: H01L21/02167 ,  C23C16/36 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/76808 ,  H01L21/76813 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L2221/1031

Abstract: A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

公开(公告)号：US06511924B2

公开(公告)日：2003-01-28

申请号：US09839337

申请日：2001-04-20

Applicant: Kevin Mukai ,  Srinivas Nemani

Inventor： Kevin Mukai ,  Srinivas Nemani

IPC: H01L2131

CPC classification number: H01L21/02164 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31612

Abstract: A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided. The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture. The first gas mixture comprises tetra-ethyl-ortho-silicate (TEOS), helium (He) and nitrogen (N2). The second gas mixture comprises ozone (O3) and optionally, oxygen (O2).

Abstract translation: 提供了一种形成用于集成电路制造的氧化硅层的方法。 氧化硅层通过使第一气体混合物和第二气体混合物反应而形成。 第一气体混合物包括四乙基原硅酸盐（TEOS），氦（He）和氮气（N 2）。 第二气体混合物包括臭氧（O 3）和任选的氧（O 2）。

公开(公告)号：US06413583B1

公开(公告)日：2002-07-02

申请号：US09338470

申请日：1999-06-22

Applicant: Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

Inventor： Farhad K. Moghadam ,  David W. Cheung ,  Ellie Yieh ,  Li-Qun Xia ,  Wai-Fan Yau ,  Chi-I Lang ,  Shin-Puu Jeng ,  Frederic Gaillard ,  Shankar Venkataraman ,  Srinivas Nemani

IPC: C23C1640

CPC classification number: H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31053 ,  H01L21/3122 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76828 ,  H01L21/76834

Abstract: A method for depositing silicon oxide layers having a low dielectric constant by reaction of an organosilicon compound and a hydroxyl forming compound at a substrate temperature less than about 400° C. The low dielectric constant films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40° C. onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

Abstract translation: 一种通过在低于约400℃的衬底温度下通过有机硅化合物和羟基形成化合物的反应沉积低介电常数的氧化硅层的方法。低介电常数膜含有残余碳并可用于间隙填充层， 预金属介电层，金属间介电层和亚微米器件中的浅沟槽隔离电介质层。 羟基化合物可以在从水或有机化合物沉积之前制备。 氧化硅层优选在低于约40℃的衬底温度下沉积到由有机硅化合物制备的衬里层上，以提供介电常数小于约3.0的间隙填充层。

公开(公告)号：US06348099B1

公开(公告)日：2002-02-19

申请号：US09334437

申请日：1999-06-16

Applicant: Li-Qun Xia ,  Ellie Yieh ,  Srinivas Nemani

Inventor： Li-Qun Xia ,  Ellie Yieh ,  Srinivas Nemani

IPC: C23C1600

CPC classification number: H01L21/31625 ,  C23C16/401 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/02362

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US5812403A

公开(公告)日：1998-09-22

申请号：US748095

申请日：1996-11-13

Applicant: Gary Fong ,  Li-Qun Xia ,  Srinivas Nemani ,  Ellie Yieh

Inventor： Gary Fong ,  Li-Qun Xia ,  Srinivas Nemani ,  Ellie Yieh

IPC: B08B7/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31 ,  G06F19/00

CPC classification number: C23C16/45512 ,  B08B7/0035 ,  C23C16/4404 ,  C23C16/4405

Abstract: The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract translation: 本发明提供了一种清洁处理室的方法。 根据具体实施方式，该方法包括以下步骤：在第一时间段内在处理室中的陶瓷加热器上的晶片上沉积电介质膜，陶瓷加热器在第一温度下加热至少约500℃ 沉积步骤; 以及在第二时间段内从被输入到远程微波等离子体系统的清洁气体将反应物质引入到处理室中，在引入步骤期间陶瓷加热器加热至至少约500℃的第二温度。 该方法还包括清洁处理室中的表面，并进行由反应物质进行的清洁。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。