公开(公告)号：US07521274B2

公开(公告)日：2009-04-21

申请号：US11684264

申请日：2007-03-09

Applicant: Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

Inventor： Stephen D. Hersee ,  Xin Wang ,  Xinyu Sun

IPC: H01L21/00

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02609 ,  H01L21/02612 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/2003 ,  H01L29/775 ,  H01L31/0304 ,  H01L31/035236 ,  H01L31/184 ,  H01L33/18 ,  H01L33/24 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01S5/1042 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/3428 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/762 ,  Y10S977/816 ,  Y10T428/24612 ,  H01L2924/00

Abstract: Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

Abstract translation: 示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和 可以精确地控制每个纳米线的结晶度。 可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。 此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。 此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

公开(公告)号：US20080123709A1

公开(公告)日：2008-05-29

申请号：US11557737

申请日：2006-11-08

Applicant: Stephen D. Hersee

Inventor： Stephen D. Hersee

IPC: H01S5/34 ,  H01L33/00

CPC classification number: H01L33/02 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333 ,  H01S2304/12

Abstract: Exemplary embodiments provide MQW semiconductor devices and methods for their manufacture. The MQW semiconductor devices can be formed by growing a MQW active region over a nanoscale periodic strain array. By using the nanoscale periodic strain array, the position, size, and composition of the In-rich clusters in the MQW active region can be controlled. This control of In-rich clusters can result in tighter wavelength control, which can be important for applications, such as, for example, lasers and LEDs.

Abstract translation: 示例性实施例提供MQW半导体器件及其制造方法。 可以通过在纳米级周期性应变阵列上生长MQW有源区域来形成MQW半导体器件。 通过使用纳米级周期性应变阵列，可以控制MQW有源区中富In簇的位置，大小和组成。 富集簇的这种控制可以导致更紧密的波长控制，这对于诸如激光器和LED的应用可能是重要的。

公开(公告)号：US6122109A

公开(公告)日：2000-09-19

申请号：US291991

申请日：1999-04-15

Applicant: Gregory M. Peake ,  Stephen D. Hersee

Inventor： Gregory M. Peake ,  Stephen D. Hersee

IPC: B29D11/00 ,  C23C16/04 ,  G02B3/00 ,  G02B6/12 ,  G02B6/124 ,  H01L31/0232 ,  H01S3/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/183 ,  G02B27/10 ,  G02B9/00 ,  G02B13/18 ,  G03C5/00

CPC classification number: G02B3/0056 ,  B29D11/00365 ,  C23C16/045 ,  G02B6/1245 ,  H01L31/0232 ,  H01S5/0267 ,  H01S5/18388 ,  G02B2006/12102 ,  G02B2006/12121 ,  H01S5/1089 ,  H01S5/18327

Abstract: In one embodiment, the present invention provides a microlens having very small focal length. The present invention also provides a non-planar microstructure having a covering layer which is slowly oxidizing or substantially free of oxygen. The present invention also provides methods for forming such microlenses and microstructures. In addition, the present invention provides a VCSEL which includes one or more non-planar microstructures of the present invention.

Abstract translation: 在一个实施方案中，本发明提供了具有非常小的焦距的微透镜。 本发明还提供了具有缓慢氧化或基本上不含氧的覆盖层的非平面微结构。 本发明还提供了形成这种微透镜和微结构的方法。 此外，本发明提供了一种VCSEL，其包括本发明的一个或多个非平面微结构。