Abstract:
In one embodiment, the present invention provides a microlens having very small focal length. The present invention also provides a non-planar microstructure having a covering layer which is slowly oxidizing of substantially free or oxygen. The present invention also provides methods for forming such microlenses and microstructures. In addition, the present invention provides a VCSEL which includes one or more non-planar microstructures of the present invention.
Abstract:
A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.
Abstract:
A diode laser and a laser resonator for a diode laser are provided, which has high lateral beam quality at high power output, requires little adjustment effort and is inexpensive to produce. The laser resonator according to the invention comprises a gain section (GS), a first planar Bragg reflector (DBR1) and a second planar Bragg reflector (DBR2), wherein the gain section (GS) has a trapezoidal design and the first planar Bragg reflector (DBR1) is arranged on a first base side of the trapezoidal gain section (GS) and the second planar Bragg reflector (DBR2) is arranged on the opposing base side of the trapezoidal gain section (GS), wherein the width (D1) of the first planar Bragg reflector (DBR1) differs from the width (D2) of the second planar Bragg reflector (DBR2).
Abstract:
A simple and compact laser resonator is proposed which makes it possible to symmetrically operate a gain medium, preferably a semiconductor, which possesses more than one channel of emission. As a result higher output powers and/or better beam qualities and/or better spectral characteristics can be achieved. The resonator is very compact and ideally comprises only three optical elements: a laseractive gain medium (1), a cylindrical collimation lens (5), and a prism (6) which is adapted to the angle between the two emissions (4) and which carries a beam splitter (7) and a feedback mirror (9) on its faces. Preferably the gain medium (1) possesses a feedback element (2) and an antireflective coating (3) on its faces. If no antireflective coating (11) is desired the same effect can be achieved by arranging the angle of incidence to fulfill the Brewster-condition. In a preferred embodiment the gain medium (1) is a high-power diode laser chip with an internal stripe-array and/or the laser resonator is unstable along the direction parallel to the epitaxial layers. In alternative embodiments the feedback element (9) is wavelength selective like a grating, a dielectric filter, a holographic element or a volume Bragg grating.
Abstract:
A method is provided to provide surface-emitting type semiconductor lasers and methods for manufacturing the same, which can readily control transverse modes of laser light. A surface-emitting type semiconductor laser pertains to a surface-emitting type semiconductor laser having a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate, and is equipped with an optical path adjusting layer having a concave curved surface over the second mirror.
Abstract:
A Group III-V semiconductor optoelectronic device provides for visible wavelength light output having a more laterally uniform, high power beam profile, albeit still quasi-Gaussian. A number of factors contribute to the enhanced profile including an improvement in reducing band offset of the Group III-V deposited layers improving carrier density through a decrease in the voltage drop require to generate carrier flow; reduction of contaminants in the growth of Group III-V AlGaInP-containing layers with compositional Al, providing for quality material necessary to achieve operation at the desired visible wavelengths; the formation of an optical resonator cavity that provides, in part, weak waveguiding of the propagating light; and the utilization of a mechanism to provide for beam spreading and filing in a beam diverging gain section prior to actively aggressive gain pumping of the propagating light in the device.
Abstract:
A high-powered mid-IR antimonide-based unstable resonator semiconductor laser that is optically pumped. One Fabry-Perot facet is a mechanically polished cylindrical mirror that extends well into the GaSb substrate. The waveguide is designed to weakly confine the transverse optical mode, and the optical pump stripe width can be varied to optimize the cavity width for high brightness operation.
Abstract:
A semiconductor laser apparatus capable of reducing a spread angle of emission light with downsizing has an active region between first and second end surfaces. A first reflection structure and a partial reflection structure are provided on the first end surface side. The end surface of the active region is divided into a total reflection region and a partial reflection region in combination with the first reflection structure and partial reflection structure. A laser resonator includes the first reflection structure and partial reflection structure. A second reflection structure is positioned on the way of a resonance optical path of the laser resonator. Light emitted within the active region propagates on a resonance optical path. An induction emission is produced. The semiconductor laser carries out a laser oscillation. Of the light arriving at the partial reflection structure, the portion transmitted through the partial reflection structure is outputted outside the apparatus.
Abstract:
The present invention provides for the coupling of laser diodes into electromagnetic radiation transmitting fibers wherein coupling efficiency is improved by improving the spatial brightness of multi-mode diode lasers as they are coupled into double-clad fibers. A Bragg grating 100 is fabricated into the core 102 of a double-clad fiber 104 coupled to a multi-mode diode laser 106. The output 108 from the multi-mode diode laser 106 is coupled into the core 102 and inner cladding 110 of the double-clad fiber by proximity or by one or more focusing objectives 112. The Bragg grating 100 in the core 102 of the double-clad fiber 104 is written at the wavelength of the multi-mode diode laser 106. The original output 108 from the multi-mode diode laser 106 strikes the Bragg grating 100 which reflects feedback 114 back to the diode laser 106.
Abstract:
In one embodiment, the present invention provides a microlens having very small focal length. The present invention also provides a non-planar microstructure having a covering layer which is slowly oxidizing or substantially free of oxygen. The present invention also provides methods for forming such microlenses and microstructures. In addition, the present invention provides a VCSEL which includes one or more non-planar microstructures of the present invention.