公开(公告)号：US08227349B2

公开(公告)日：2012-07-24

申请号：US12873574

申请日：2010-09-01

Applicant: Hyoung-Hee Kim ,  Yool Kang ,  Seong-Ho Moon ,  Seok-Hwan Oh ,  So-Ra Han ,  Seong-Woon Choi

Inventor： Hyoung-Hee Kim ,  Yool Kang ,  Seong-Ho Moon ,  Seok-Hwan Oh ,  So-Ra Han ,  Seong-Woon Choi

IPC: H01L21/461 ,  H01L21/302 ,  H01L21/469 ,  H01L21/3205

CPC classification number: H01L21/28123 ,  H01L21/76229 ,  H01L27/11526 ,  H01L27/11529

Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Abstract translation: 形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法，所述掩模图案的形成方法包括在基板上形成第一掩模图案; 在第一掩模图案上形成第一初步封盖层; 向第一初步封盖图案照射能量以形成与第一掩模图案离子键合的第二初步封盖层; 向第二初步封盖层施加酸以形成封盖层; 在所述封盖层之间形成第二掩模层，所述第二掩模层的溶解度低于所述封盖层的溶解度; 并去除覆盖层以形成第二掩模图案。

公开(公告)号：US20120028434A1

公开(公告)日：2012-02-02

申请号：US13185897

申请日：2011-07-19

Applicant: Hyung-rae LEE ,  Yool Kang ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  So-ra Han ,  Tae-hoi Park

Inventor： Hyung-rae LEE ,  Yool Kang ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  So-ra Han ,  Tae-hoi Park

IPC: H01L21/306 ,  H01L21/76

CPC classification number: H01L27/10891 ,  G03F7/40 ,  H01L21/0206 ,  H01L21/823842 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66606

Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Abstract translation: 一种制造半导体器件的方法包括在衬底上的第一区域上形成抗蚀剂图案，使包含酸源的除去溶液与抗蚀剂图案接触，并与衬底的第二区域分离，残留在第二区域上的抗蚀剂残留物 通过使用从除去溶液中的酸源获得的酸，并从底物除去分解的抗蚀剂残留物和除去溶液的底物区域。

公开(公告)号：US07862988B2

公开(公告)日：2011-01-04

申请号：US11529310

申请日：2006-09-29

Applicant: Cha-Won Koh ,  Yool Kang ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Ji-Young Lee

Inventor： Cha-Won Koh ,  Yool Kang ,  Sang-Gyun Woo ,  Seok-Hwan Oh ,  Gi-Sung Yeo ,  Ji-Young Lee

IPC: G03F7/26

CPC classification number: G03F7/40 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338

Abstract: Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.

Abstract translation: 提供了一种用于形成半导体器件的图案的方法。 根据该方法，可以在衬底上形成第一掩模图案，并且可以在每个第一掩模图案的侧壁上形成第二掩模图案。 第三掩模图案可以填充在相邻的第二掩模图案之间形成的空间，并且可以去除第二掩模图案。 然后可以使用第一和第三掩模图案作为蚀刻掩模去除衬底的一部分。

公开(公告)号：US07842450B2

公开(公告)日：2010-11-30

申请号：US11711781

申请日：2007-02-28

Applicant: Doo-youl Lee ,  Suk-joo Lee ,  Yool Kang ,  Han-ku Cho ,  Chang-jin Kang ,  Jae-ok Yoo ,  Sung-chan Park

Inventor： Doo-youl Lee ,  Suk-joo Lee ,  Yool Kang ,  Han-ku Cho ,  Chang-jin Kang ,  Jae-ok Yoo ,  Sung-chan Park

IPC: G03F7/00

CPC classification number: H01L21/0337

Abstract: A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.

Abstract translation: 形成半导体器件的方法包括：在目标层上形成第一掩模图案，第一掩模图案暴露目标层的第一部分，形成中间材料层，包括在第一掩模图案的一侧上沉积中间材料层膜 掩模图案和目标层的第一部分，并且使中间材料层膜变薄以形成中间材料层，形成暴露中间材料层的第二部分的第二掩模图案，去除中间材料的暴露的第二部分 层以露出目标层，以及使用第一和第二掩模图案作为图案掩模来图案化目标层。

公开(公告)号：US20090274980A1

公开(公告)日：2009-11-05

申请号：US12267687

申请日：2008-11-10

Applicant: Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

Inventor： Yool Kang ,  Suk-joo Lee ,  Jung-hyeon Lee ,  Shi-yong Yi

IPC: G03F7/20

CPC classification number: H01L21/027 ,  G03F7/0035 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/32139

Abstract: A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.

Abstract translation: 提供了根据使用酸扩散的双重图案化工艺形成半导体器件的精细图案的方法。 在该方法中，在基板上形成多个第一掩模图案以彼此分离。 在多个第一掩模图案的每一个的侧壁和上表面上形成包括酸源的封盖膜。 在封盖膜上形成第二掩模层。 通过将从酸源获得的酸从封盖膜扩散到第二掩模层中，在第二掩模层内形成多个酸扩散区。 多个第二掩模图案由除去第二掩模层的酸扩散区域之后残留在第一间隙中的第二掩模层的残留部分形成。

公开(公告)号：US20070111441A1

公开(公告)日：2007-05-17

申请号：US11594808

申请日：2006-11-09

Applicant: Cha-Won Koh ,  Byung-Hong Chung ,  Sang-Gyun Woo ,  Jeong-Lim Nam ,  Seok-Hwan Oh ,  Jai-Hyuk Song ,  Hyun Park ,  Yool Kang

Inventor： Cha-Won Koh ,  Byung-Hong Chung ,  Sang-Gyun Woo ,  Jeong-Lim Nam ,  Seok-Hwan Oh ,  Jai-Hyuk Song ,  Hyun Park ,  Yool Kang

IPC: H01L21/336 ,  H01L29/76

CPC classification number: H01L29/42324 ,  H01L27/115 ,  H01L27/11521

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.

Abstract translation: 提供一种非易失性存储器件及其制造方法。 非易失性存储器件的浮置栅极可以沿着沿着控制栅电极延伸的方向截取十字形截面。 浮置栅极可以具有沿着垂直于控制栅电极的有源区延伸的方向的T形截面。 浮栅电极可以包括顺序地设置在栅绝缘层上的下栅极图案，中栅极图案和上栅极图案，其中中间栅极图案的宽度大于下栅极图案和上栅极图案。 中间栅极图案和上部栅极图案之间的边界可以具有圆角。

公开(公告)号：US20060160028A1

公开(公告)日：2006-07-20

申请号：US11328404

申请日：2006-01-09

Applicant: Hyung-Rae Lee ,  Yool Kang ,  Sang-Gyun Woo ,  Man-Hyoung Ryoo ,  Suk-Joo Jee

Inventor： Hyung-Rae Lee ,  Yool Kang ,  Sang-Gyun Woo ,  Man-Hyoung Ryoo ,  Suk-Joo Jee

IPC: G03F7/00

CPC classification number: G03F7/0035 ,  G03F7/0045

Abstract: Methods of forming fine patterns of a semiconductor device include forming a positive first photoresist layer on a semiconductor substrate, including initiating an exposure reaction at a first dose. The first photoresist layer is exposed and developed to form first photoresist patterns. A second photoresist layer is formed on a region of the semiconductor substrate including the first photoresist patterns, including terminating an exposure reaction at a second dose no greater than the first dose. The second photoresist layer is exposed and developed to form second photoresist patterns between the first photoresist patterns. Methods of forming fine patterns having a negative first photoresist layer are also provided.

Abstract translation: 形成半导体器件的精细图案的方法包括在半导体衬底上形成正的第一光致抗蚀剂层，包括以第一剂量引发曝光反应。 第一光致抗蚀剂层被曝光和显影以形成第一光致抗蚀剂图案。 在包括第一光致抗蚀剂图案的半导体衬底的区域上形成第二光致抗蚀剂层，包括以不大于第一剂量的第二剂量终止曝光反应。 第二光致抗蚀剂层被曝光和显影以在第一光致抗蚀剂图案之间形成第二光致抗蚀剂图案。 还提供了形成具有负的第一光致抗蚀剂层的精细图案的方法。

公开(公告)号：US20060115772A1

公开(公告)日：2006-06-01

申请号：US11282368

申请日：2005-11-18

Applicant: Jung-Hwan Hah ,  Yool Kang ,  Man-Hyoung Ryoo ,  Shi-Yong Yi ,  Sang-Gyun Woo

Inventor： Jung-Hwan Hah ,  Yool Kang ,  Man-Hyoung Ryoo ,  Shi-Yong Yi ,  Sang-Gyun Woo

IPC: G03C5/00

CPC classification number: G03F7/091 ,  C08G61/02

Abstract: The present invention provides polymeric films including polymers having an sp3 carbon main frame including a tetrahedral center atom. Methods of forming the same, hard marks including the same and methods of forming fine patterns using the same are also provided.

Abstract translation: 本发明提供了聚合物膜，其包括具有包含四面体中心原子的sp 3 O 3碳主框的聚合物。 还提供了形成它们的方法，包括其的硬标记和使用其形成精细图案的方法。

公开(公告)号：US20060111547A1

公开(公告)日：2006-05-25

申请号：US11283841

申请日：2005-11-22

Applicant: Mitsuhiro Hata ,  Sang-gyun Woo ,  Yool Kang ,  Man-hyoung Ryoo ,  Hyun-woo Kim ,  Jung-hwan Hah

Inventor： Mitsuhiro Hata ,  Sang-gyun Woo ,  Yool Kang ,  Man-hyoung Ryoo ,  Hyun-woo Kim ,  Jung-hwan Hah

IPC: C08G64/00

CPC classification number: C08G61/12 ,  C08G61/02 ,  C08G65/4081 ,  G03F7/0388 ,  G03F7/091

Abstract: In one aspect, a bottom layer resist polymer has an expanded p-electron conjugation system based on a monomer unit having a 3,3′-diindenyl structure. The bottom layer resist polymer of this aspect is composed of a repeat unit having the 3,3′-diindenyl structure represented by the following formula: where l, m and n are respective mole fractions of monomer units of the polymer, where l+m+n=1, where l=0.1 to 0.9, m=0.1 to 0.9, and n=0 to 0.8, where each of k1 and k2 is independently 0 or 1, and each of R1, R2, R3 and R4 is independently a hydrogen atom or an unsaturated hydrocarbon, and where Z is a monomer unit including a bisphenol derivative.

Abstract translation: 一方面，底层抗蚀剂聚合物具有基于具有3,3'-二茚基结构的单体单元的扩展的p-电子共轭体系。 该方面的底层抗蚀剂聚合物由具有下式表示的3,3'-二茚基结构的重复单元组成：其中l，m和n分别是聚合物单体单元的摩尔分数，其中l + m + n = 1，其中l = 0.1至0.9，m = 0.1至0.9，n = 0至0.8，其中k 1和k 2 2中的每一个独立地为0 或1，并且R 1，R 2，R 3和R 4中的每一个独立地为氢原子 或不饱和烃，Z为包含双酚衍生物的单体单元。

公开(公告)号：US06753125B2

公开(公告)日：2004-06-22

申请号：US09888912

申请日：2001-06-25

Applicant: Sang-jun Choi ,  Yool Kang

Inventor： Sang-jun Choi ,  Yool Kang

IPC: G03F7038

CPC classification number: G03F7/0392 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

Abstract: A photosensitive polymer having a protecting group including a fused aromatic ring, and a photoresist composition including the photosensitive polymer are provided. The photosensitive polymer has an acid-labile protecting group at its polymer backbone, the acid-labile protecting group including a fused aromatic ring having formula: where R1 is hydrogen atom or alkyl group having from 1 to 4 carbon atoms; X is hydrogen atom, halogen, alkyl, or alkoxy; and y is an integer from 1 to 3, wherein the fused aromatic ring is a liner ring or branched ring with y greater than or equal to 2. A photoresist composition is also provided which includes the photosensitive polymer and a photoacid generator (PAG).

Abstract translation: 提供了具有包含稠合芳环的保护基的光敏聚合物和包含该光敏聚合物的光致抗蚀剂组合物。 光敏聚合物在其聚合物主链上具有酸不稳定的保护基，酸不稳定保护基包括具有下式的稠合芳环：其中R 1是氢原子或具有1至4个碳原子的烷基; X是氢原子，卤素，烷基或烷氧基; y为1〜3的整数，其中稠合芳香环为y大于或等于2的衬垫环或分支环。还提供了包含光敏聚合物和光致酸产生剂（PAG）的光致抗蚀剂组合物。