Abstract:
A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.
Abstract:
A data storage method includes identifying, in a set of data items associated with respective logical addresses for storage in a memory, a first subset of the logical addresses associated with the data items containing application data, and a second subset of the logical addresses associated with the data items containing parity information that has been calculated over the application data. The data items associated with the first identified subset are stored in one or more first physical memory areas of the memory, and the data items associated with the second identified subset are stored in one or more second physical memory areas of the memory, different from the first physical memory areas. A memory management task is performed independently in the first physical memory areas and in the second physical memory areas.
Abstract:
A method includes, in a memory controller that controls a memory, evaluating an available memory space remaining in the memory to write data. A redundant storage configuration is selected in the memory controller depending on the available memory space. Redundancy information is calculated over the data using the selected redundant storage configuration. The data and the redundancy information are written to the available memory space in the memory.
Abstract:
A device includes a memory and a read/write (R/W) unit. The memory includes multiple gates coupled to a common charge-trap layer. The R/W unit is configured to program and read the memory by creating and reading a set of electrically-charged regions in the common charge-trap layer, wherein at least a given region in the set is not uniquely associated with any single one of the gates.
Abstract translation:一个设备包括一个存储器和一个读/写(R / W)单元。 存储器包括耦合到公共电荷陷阱层的多个门。 R / W单元被配置为通过在公共电荷陷阱层中创建和读取一组充电区域来对存储器进行编程和读取,其中集合中的至少一个给定区域不是唯一地与 大门。
Abstract:
A device includes multiple memory devices, a bus splitter and a package. The bus splitter is configured to exchange storage commands and data with an external host using an external Input/Output (I/O) bus, and to distribute the storage commands and the data over multiple buses connected to respective subsets of the memory devices, so as to relay the storage commands and the data between the multiple memory devices and the external host. The memory devices and the bus splitter are contained in the package, in a multi-chip package (MCP) structure.
Abstract:
A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.
Abstract:
A method includes, in a memory controller that controls a memory, evaluating an available memory space remaining in the memory to write data. A redundant storage configuration is selected in the memory controller depending on the available memory space. Redundancy information is calculated over the data using the selected redundant storage configuration. The data and the redundancy information are written to the available memory space in the memory.
Abstract:
A storage device includes a memory and a processor. The processor is configured to store data items for a host in respective logical addresses, to identify a first subset of the logical addresses as frequently-accessed logical addresses and a second subset of the logical addresses as rarely-accessed logical addresses, to manage the frequently-accessed logical addresses separately from the rarely-accessed logical addresses, to receive from the host an indication of one or more logical addresses, which are used for storing data that is identified by the host as having been deleted by a user, and to add the logical addresses indicated by the host to the rarely-accessed logical addresses.
Abstract:
A method includes, in a non-volatile memory that includes multiple memory blocks, defining a redundancy zone that includes at least an old parity block, a new parity block and multiple active blocks of which one block is defined as an open block. Data is stored in the redundancy zone and the stored data is protected, such that new input data is stored in the open block, redundancy information for the active blocks including the open block is stored in the new parity block, and the redundancy information for the active blocks excluding the open block is stored in the old parity block. Upon filling the open block and the new parity block, an alternative block is assigned to serve as the open block and the new parity block is assigned to serve as the old parity block.
Abstract:
A method includes, in a memory device, receiving a command that specifies a peak power consumption that is not to be exceeded by the memory device. A memory of the memory device is configured in accordance with the peak power consumption specified in the command. A data storage operation in the configured memory is performed, while complying with the specified peak power consumption.