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    Lithographic apparatus and method
    32.
    发明授权
    Lithographic apparatus and method 有权

    公开(公告)号：US10139735B2

    公开(公告)日：2018-11-27

    申请号：US15316036

    申请日：2015-05-13

    Applicant: ASML Netherlands B.V.

    Inventor： Johannes Jacobus Matheus Baselmans ,  Hans Butler ,  Christiaan Alexander Hoogendam ,  Sander Kerssemakers ,  Bart Smeets ,  Robertus Nicodemus Jacobus Van Ballegoij ,  Hubertus Petrus Leonardus Henrica Van Bussel

    IPC: G02B27/52 ,  G03F7/20

    Abstract: A method of modifying a lithographic apparatus comprising an illumination system for providing a radiation beam, a support structure for supporting a patterning device to impart the radiation beam with a pattern in its cross-section, a first lens for projecting the radiation beam at the patterning device with a first magnification, a substrate table for holding a substrate, and a first projection system for projecting the patterned radiation beam at a target portion of the substrate with a second magnification. The first lens and the first projection system together provide a third magnification. The method comprises reducing by a first factor the first magnification to provide a second lens for projecting the radiation beam with a fourth magnification; and increasing by the first factor the second magnification to provide a second projection system for projecting the patterned radiation beam at the target portion of the substrate with a fifth magnification.

    Lithographic apparatus and device manufacturing method
    33.
    发明授权
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号：US09529269B2

    公开(公告)日：2016-12-27

    申请号：US14398047

    申请日：2013-05-07

    Applicant: ASML Netherlands B.V.

    Inventor： Johannes Jacobus Matheus Baselmans ,  Erik Roelof Loopstra

    IPC: G03B27/32 ,  G03B27/52 ,  G03B27/54 ,  G03F7/20 ,  G03F9/00

    CPC classification number: G03F7/70058 ,  G03F7/70266 ,  G03F7/70308 ,  G03F9/7026

    Abstract: A field manipulator to provide high resolution control of position in the XY plane and/or focus control. The field manipulator includes a plate located between the patterning device and the substrate. Control of the XY position is provided by tilting of the plate, while control of the focus position may be provided by localized deformation of the plate. Both adjustments may be performed by one or more actuators that act upon one or more edges of the plate. In an embodiment, two substantially parallel plates are provided and focus control can be provided by changing the spacing between them. A liquid may be provided between the plates which may be temperature controlled to adjust the focus by changing the refractive index of the liquid.

    Abstract translation: 场操纵器，用于提供XY平面和/或聚焦控制中位置的高分辨率控制。 场操纵器包括位于图案形成装置和基板之间的板。 通过板的倾斜来提供XY位置的控制，同时可以通过板的局部变形来提供对焦位置的控制。 两个调整可以由作用于板的一个或多个边缘的一个或多个致动器执行。 在一个实施例中，提供两个基本上平行的板，并且可以通过改变它们之间的间距来提供焦点控制。 可以在板之间设置液体，其可以被温度控制以通过改变液体的折射率来调节焦点。

    Lithographic Method and Apparatus
    35.
    发明申请
    Lithographic Method and Apparatus 有权

    公开(公告)号：US20160062243A1

    公开(公告)日：2016-03-03

    申请号：US14934623

    申请日：2015-11-06

    Applicant: ASML Netherlands B.V.

    Inventor： Johannes Jacobus Matheus Baselmans ,  Johannes Christiaan Maria Jasper

    IPC: G03F7/20

    CPC classification number: G03F7/705 ,  G03F7/70058 ,  G03F7/70141 ,  G03F7/706 ,  G03F7/70891

    Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.

    Two-dimensional diffraction grating
    36.
    发明授权
    Two-dimensional diffraction grating 有权

    公开(公告)号：US12007590B2

    公开(公告)日：2024-06-11

    申请号：US16965172

    申请日：2019-01-04

    Applicant: ASML Netherlands B.V.

    Inventor： Pieter Cristiaan De Groot ,  Johannes Jacobus Matheus Baselmans ,  Derick Yun Chek Chong ,  Yassin Chowdhury

    IPC: G02B5/18 ,  G01M11/02 ,  G02B27/00 ,  G02B27/42 ,  G03F7/00

    CPC classification number: G02B5/1819 ,  G01M11/0271 ,  G02B27/0012 ,  G02B27/4233 ,  G03F7/706

    Abstract: A two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises a substrate provided with a square array of through-apertures, wherein the diffraction grating is self-supporting. It will be appreciated that for a substrate provided with a square array of through-apertures to be self-supporting at least some substrate material is provided between each through-aperture and the adjacent through apertures. A method of designing a two-dimensional diffraction grating for a phase-stepping measurement system for determining an aberration map for a projection system comprises: selecting a general geometry for the two-dimensional diffraction grating, the general geometry having at least one parameter; and selecting values for the least one parameter that result in a grating efficiency map for the two-dimensional diffraction grating so as to control the contributions to a first harmonic of a phase stepping signal.

    Imaging via zeroth order suppression
    37.
    发明授权
    Imaging via zeroth order suppression 有权

    公开(公告)号：US11892776B2

    公开(公告)日：2024-02-06

    申请号：US17415101

    申请日：2019-12-12

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Johannes Jacobus Matheus Baselmans ,  Duan-Fu Stephen Hsu ,  Willem Jan Bouman ,  Frank Jan Timmermans ,  Marie-claire Van Lare

    IPC: G03F7/00

    CPC classification number: G03F7/70308

    Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

    Lithographic method and apparatus
    38.
    发明授权
    Lithographic method and apparatus 有权

    公开(公告)号：US10747120B2

    公开(公告)日：2020-08-18

    申请号：US16558265

    申请日：2019-09-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Carolus Johannes Catharina Schoormans ,  Petrus Franciscus Van Gils ,  Johannes Jacobus Matheus Baselmans

    IPC: G03F7/20 ,  G03F1/42 ,  G03F9/00

    Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

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