公开(公告)号：US09506145B2

公开(公告)日：2016-11-29

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: H01L21/00 ,  C23C16/44 ,  C23C16/48 ,  C23C16/455

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

公开(公告)号：US12300491B2

公开(公告)日：2025-05-13

申请号：US18082872

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: H01L21/033 ,  H01L21/02

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US12282256B2

公开(公告)日：2025-04-22

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US11959868B2

公开(公告)日：2024-04-16

申请号：US17166967

申请日：2021-02-03

Applicant: Applied Materials, Inc.

Inventor： Xiaopu Li ,  Kallol Bera ,  Yaoling Pan ,  Kelvin Chan ,  Amir Bayati ,  Philip Allan Kraus ,  Kenric T. Choi ,  William John Durand

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  G01N27/22 ,  G01N33/00 ,  H01L21/67

CPC classification number: G01N27/22 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52 ,  G01N33/0027 ,  H01L21/67017 ,  H01L21/67253

Abstract: Embodiments disclosed herein include gas concentration sensors, and methods of using such gas concentration sensors. In an embodiment, a gas concentration sensor comprises a first electrode. In an embodiment the first electrode comprises first fingers. In an embodiment, the gas concentration sensor further comprises a second electrode. In an embodiment, the second electrode comprises second fingers that are interdigitated with the first fingers.

公开(公告)号：US11956978B2

公开(公告)日：2024-04-09

申请号：US17011729

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese

IPC: C23C16/04 ,  C23C14/22 ,  C23C16/02 ,  C23C16/455 ,  H10B99/00 ,  H01L21/285

CPC classification number: H10B99/00 ,  C23C16/0281 ,  C23C16/047 ,  C23C14/221 ,  C23C14/225 ,  C23C16/0209 ,  C23C16/45525 ,  H01L21/28562

Abstract: In one embodiment, a method of selectively forming a deposit may include
providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

公开(公告)号：US11562902B2

公开(公告)日：2023-01-24

申请号：US16932793

申请日：2020-07-19

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/24 ,  C23C16/56 ,  C23C16/50

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US11459652B2

公开(公告)日：2022-10-04

申请号：US17072143

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Tristan Y. Ma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/02 ,  H01L21/285 ,  C23C16/505 ,  H01J37/32 ,  H01L21/288 ,  H01L27/108

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

公开(公告)号：US20220262625A1

公开(公告)日：2022-08-18

申请号：US17574370

申请日：2022-01-12

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Kelvin Chan ,  Mark Joseph Saly

IPC: H01L21/027 ,  H01L21/033 ,  H01J37/32 ,  G03F7/16

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using chemical vapor condensation deposition processes. In an example, a method for forming a photoresist layer over a substrate in a vacuum chamber includes providing a metal precursor vapor into the vacuum chamber from an ampoule maintained at a first temperature. The method further includes providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. The photoresist layer is a metal oxo containing material. The substrate is maintained at a second temperature less than the first temperature during the formation of the photoresist layer on the surface of the substrate.

公开(公告)号：US20220155689A1

公开(公告)日：2022-05-19

申请号：US17508291

申请日：2021-10-22

Applicant: Applied Materials, Inc.

Inventor： Farzad Houshmand ,  Wayne French ,  Anantha Subramani ,  Kelvin Chan ,  Lakmal Charidu Kalutarage ,  Mark Joseph Saly

IPC: G03F7/16

Abstract: Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

公开(公告)号：US11174551B2

公开(公告)日：2021-11-16

申请号：US15615790

申请日：2017-06-06

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/08 ,  C23C16/02 ,  C23C16/42

Abstract: Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.