利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

47 条记录 (耗时 0.028 秒)

    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER
    31.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND WAFER 有权
    半导体发光元件和散热片

    公开(公告)号：US20090101936A1

    公开(公告)日：2009-04-23

    申请号：US12298664

    申请日：2007-04-27

    申请人： Hidenori Kamei ,  Syuuichi Shinagawa

    发明人： Hidenori Kamei ,  Syuuichi Shinagawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/16 ,  H01L33/0095

    摘要： There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

    摘要翻译： 提供了一种半导体发光元件，其允许提高光提取效率而不增加制造步骤的数量和晶片。 在通过在单晶衬底上层叠化合物半导体层3并将单晶衬底分割成块而形成的半导体发光元件1中，形成作为分割单晶衬底的每个衬底片2的侧面21至24 使得用作基板2的基准的侧面21相对于（1-100）面形成15°的角度，并且侧面21至24由与 晶体结构在单晶衬底中。

    Light-emitting device comprising a gallum-nitride-group compound-semiconductor
    32.
    发明授权
    Light-emitting device comprising a gallum-nitride-group compound-semiconductor 有权
    包含镓氮化物基化合物半导体的发光器件

    公开(公告)号：US07002184B2

    公开(公告)日：2006-02-21

    申请号：US11022801

    申请日：2004-12-28

    申请人： Yasunari Oku ,  Hidenori Kamei

    发明人： Yasunari Oku ,  Hidenori Kamei

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

    摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

    摘要翻译： 在使用基板的发光氮化镓族化合物半导体器件中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，从而提高了制造成品率。 该装置包括在基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极。 n型层是以从衬底的顺序构成第一n型层和具有比第一n型层的载流子浓度高的载流子浓度的第二n型层的层叠层。 随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

    Light-emitting device comprising a gallium-nitride-group compound-semiconductor
    33.
    发明申请
    Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权

    公开(公告)号：US20050121681A1

    公开(公告)日：2005-06-09

    申请号：US11022801

    申请日：2004-12-28

    申请人： Yasunari Oku ,  Hidenori Kamei

    发明人： Yasunari Oku ,  Hidenori Kamei

    IPC分类号： H01L33/32 ,  H01S5/343 ,  H01L33/00

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333

    摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using a substrate, the operating voltage is lowered and at the same time the occurrence of crack during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on a substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

    Light-emitting device comprising a gallium-nitride-group compound-semiconductor
    34.
    发明授权
    Light-emitting device comprising a gallium-nitride-group compound-semiconductor 有权
    包含氮化镓族化合物半导体的发光装置

    公开(公告)号：US06497944B1

    公开(公告)日：2002-12-24

    申请号：US09219428

    申请日：1998-12-23

    申请人： Yasunari Oku ,  Hidenori Kamei

    发明人： Yasunari Oku ,  Hidenori Kamei

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01S5/34333 ,  Y10S428/917 ,  Y10T428/24942 ,  Y10T428/2495

    摘要： In the light-emitting gallium-nitride-group compound semiconductor devices using an insulating substrate, the operating voltage is lowered and at the same time the occurrence of cracks during crystal growth is suppressed, resulting in an improved manufacturing yield rate. The device includes a stacked structure of an n-type layer, a light-emitting layer and a p-type layer formed in the foregoing order on an insulating substrate, and an n-side electrode formed on the surface of the n-type layer. The n-type layer is a laminate layer composed of, in the order from the substrate, a first n-type layer and a second n-type layer having a carrier concentration higher than that of the first n-type layer. As the contact resistance between the n-type layer and the n-side electrode formed thereon is reduced, the operating voltage of a light-emitting device is lowered, and the power consumption decreased.

    摘要翻译： 在使用绝缘性基板的发光氮化镓系化合物半导体装置中，工作电压降低，同时抑制了晶体生长期间的裂纹的发生，提高了制造成品率。 该装置包括在绝缘基板上以上述顺序形成的n型层，发光层和p型层的层叠结构，以及形成在n型层的表面上的n侧电极 。 n型层是以从衬底的顺序构成具有比第一n型层的载流子浓度高的载流子浓度的第一n型层和第二n型层的层叠层。 随着形成在其上的n型层和n侧电极之间的接触电阻减小，发光器件的工作电压降低，功耗降低。

    Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same
    35.
    发明授权
    Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same 有权
    包含氮化镓族化合物半导体的发光器件及其制造方法

    公开(公告)号：US06445127B1

    公开(公告)日：2002-09-03

    申请号：US09250732

    申请日：1999-02-16

    申请人： Yasunari Oku ,  Hidenori Kamei

    发明人： Yasunari Oku ,  Hidenori Kamei

    IPC分类号： H01J162

    CPC分类号： H01L33/32 ,  H01L33/0012

    摘要： A gallium-nitride-group compound-semiconductor light-emitting device having an improved luminous intensity that makes it more suitable for use in the full-color outdoor display of an advanced performance. A gallium-nitride-group compound-semiconductor light-emitting device comprising an n-type layer 3, a light-emitting layer 4 and p-type layers 5, 6, the light-emitting layer 4 is doped with a p-type impurity, Mg for example, in a certain specific concentration, so a pn junction is formed within the light-emitting layer 4 and a light emission caused by the electron transition between conduction band and valence band is obtained. In a GaN group compound-semiconductor light-emitting device comprising at least an n-type clad layer 3, a p-type clad layer 5 and a light-emitting layer formed in between the clad layers 3, 5, stacked on a substrate 1. The light-emitting layer 4 is structured as a substance of stacked layers including an n-type layer 41 and a p-type layer 42, or these layers plus an i-type layer formed in between the layers 41 and 42, so a pn junction is formed within the light-emitting layer 4 itself. The injection of electrons and holes into the light-emitting layer 4 is expedited and the luminous intensity of the light-emitting layer 4 is increased.

    摘要翻译： 具有改善的发光强度的氮化镓族化合物半导体发光器件，使其更适用于高级性能的全色室外显示器。 包含n型层3，发光层4和p型层5,6的氮化镓族化合物半导体发光器件，发光层4掺杂有p型杂质 ，例如Mg，在一定的浓度下，因此在发光层4内形成pn结，获得由导带和价带之间的电子跃迁引起的发光。 在包括至少n型覆盖层3，p型覆盖层5和形成在覆盖层3,5之间的发光层的GaN族化合物半导体发光器件中，层叠在基板1上 发光层4被构造为包括n型层41和p型层42的堆叠层的物质，或这些层加上形成在层41和42之间的i型层，因此 pn结形成在发光层4本身内。 电子和空穴注入发光层4的加速，并且发光层4的发光强度增加。

    Semiconductor light emitting element and wafer
    36.
    发明授权
    Semiconductor light emitting element and wafer 有权
    半导体发光元件和晶圆

    公开(公告)号：US07915714B2

    公开(公告)日：2011-03-29

    申请号：US12298664

    申请日：2007-04-27

    申请人： Hidenori Kamei ,  Syuuichi Shinagawa

    发明人： Hidenori Kamei ,  Syuuichi Shinagawa

    IPC分类号： H01L33/16

    CPC分类号： H01L33/16 ,  H01L33/0095

    摘要： There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.

    摘要翻译： 提供了一种半导体发光元件，其允许提高光提取效率而不增加制造步骤的数量和晶片。 在通过在单晶衬底上层叠化合物半导体层3并将单晶衬底分割成块而形成的半导体发光元件1中，形成作为分割单晶衬底的每个衬底片2的侧面21至24 使得用作基板2的基准的侧面21相对于（1-100）面形成15°的角度，并且侧面21至24由与 晶体结构在单晶衬底中。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    39.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光元件和制造半导体发光器件的方法

    公开(公告)号：US20100047939A1

    公开(公告)日：2010-02-25

    申请号：US12518388

    申请日：2008-02-19

    申请人： Hidenori Kamei

    发明人： Hidenori Kamei

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L2224/13 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

    摘要： In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield.A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.

    摘要翻译： 在半导体发光器件中，光从衬底的侧表面丢失; 因此，如果基板侧表面占据大面积，则降低光提取效率。 可以通过减小基板的厚度来减小基板侧表面的面积。 然而，薄的基板具有低的机械强度，并且在加工过程中由于应力而破裂，​​并且降低了产量。 在基板上形成发光层。 在用蜡固定到研磨板上之后，将基底研磨成薄。 然后将支撑基底结合到基底以进行加强。 将基板固定到电极等，其中支撑基板结合到基板。 最后去除支撑衬底。