公开(公告)号：US08102622B2

公开(公告)日：2012-01-24

申请号：US12318645

申请日：2009-01-05

申请人： Atsushi Yamaguchi ,  Michitaka Nishiyama ,  Shin Narushima ,  Hiromichi Umehara ,  Makoto Sato ,  Tatsuhiro Nojima

发明人： Atsushi Yamaguchi ,  Michitaka Nishiyama ,  Shin Narushima ,  Hiromichi Umehara ,  Makoto Sato ,  Tatsuhiro Nojima

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： In a perpendicular magnetic write head manufacturing method a magnetic layer is formed on a substrate. On the magnetic layer, first and second nonmagnetic layers are formed with different materials. A mask pattern is formed on the second nonmagnetic layer, and the second nonmagnetic layer in a region not covered with the mask pattern is removed. Thereby, the patterned second nonmagnetic layer is formed while leaving the first nonmagnetic layer. The mask pattern is removed and a milling process is selectively performed on the first nonmagnetic layer and the magnetic layer with the patterned second nonmagnetic layer as a mask to remove all of the first nonmagnetic layer in an exposed region and to dig down the magnetic layer in the exposed region, thereby forming a main magnetic pole layer having an inclined part whose thickness decreases with distance from an edge position of the patterned second nonmagnetic layer.

摘要翻译： 在垂直磁性写入头制造方法中，在衬底上形成磁性层。 在磁性层上，第一和第二非磁性层由不同的材料形成。 在第二非磁性层上形成掩模图案，并且去除未被掩模图案覆盖的区域中的第二非磁性层。 由此，形成图案化的第二非磁性层，同时离开第一非磁性层。 去除掩模图案，并且在第一非磁性层和具有图案化的第二非磁性层的磁性层上选择性地进行研磨工艺作为掩模，以去除暴露区域中的所有第一非磁性层，并将 从而形成具有倾斜部分的主磁极层，该倾斜部分的厚度随着距图案化的第二非磁性层的边缘位置的距离而减小。

公开(公告)号：US08004006B2

公开(公告)日：2011-08-23

申请号：US12084634

申请日：2006-11-07

申请人： Ken Nakahara ,  Atsushi Yamaguchi

发明人： Ken Nakahara ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/44

摘要： Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.

摘要翻译： 提供一种氮化物半导体发光元件，即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽，也不会对发光区域造成损害并具有高亮度而不劣化 通过蚀刻形成芯片分离和激光剥离; 及其制造方法。 当从p侧观察时，n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。 直到该步骤A的位置，保护绝缘膜6覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4，p型电极5的一侧以及部分 使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时，当用于 通过蚀刻形成芯片分离或激光剥离。

公开(公告)号：US08000063B2

公开(公告)日：2011-08-16

申请号：US11623493

申请日：2007-01-16

申请人： Atsushi Yamaguchi ,  Kei Hirata ,  Satoshi Miura ,  Yoshihiro Tsuchiya ,  Kiyoshi Noguchi

发明人： Atsushi Yamaguchi ,  Kei Hirata ,  Satoshi Miura ,  Yoshihiro Tsuchiya ,  Kiyoshi Noguchi

IPC分类号： G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/11 ,  G11B5/3912

摘要： A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.

摘要翻译： 磁阻元件包括下磁屏蔽膜和设置在下磁屏蔽膜上方的磁阻膜。 下磁屏蔽膜包括下屏蔽层和上屏蔽层。 上屏蔽层是无定形或微晶的，由含有B或P的NiFe或CoFe组合物制成并沉积在下屏蔽层上。 下屏蔽层是晶体尺寸等于或小于20nm的非晶或微晶的导电层。

公开(公告)号：US20110142614A1

公开(公告)日：2011-06-16

申请号：US12967196

申请日：2010-12-14

申请人： Chisachi Kato ,  Atsushi Yamaguchi ,  Akira Ueda ,  Kazuhiro Nitta ,  Akihiro Otsuka ,  Tadashi Katsui ,  Masahiro Suzuki ,  Yoshihiko Aizawa ,  Honami Oosawa

发明人： Chisachi Kato ,  Atsushi Yamaguchi ,  Akira Ueda ,  Kazuhiro Nitta ,  Akihiro Otsuka ,  Tadashi Katsui ,  Masahiro Suzuki ,  Yoshihiko Aizawa ,  Honami Oosawa

IPC分类号： F04D29/52 ,  F04D19/02

CPC分类号： F04D29/663 ,  F04D19/002 ,  F04D19/007 ,  F04D19/024 ,  F04D29/526 ,  F04D29/542 ,  F04D29/547 ,  F04D29/667 ,  F04D29/681

摘要： A counter-rotating axial flow fan with reduced noise at the target operating point achieved without modifying a front impeller, a rear impeller, or a middle stationary portion is provided. An annular rib including a projecting surface for generating turbulent flow is formed on an inner wall portion of a casing at a position off from the middle stationary portion to a side of the rear impeller, the projecting surface extending radially inwardly of the inner wall portion and extending continuously in the circumferential direction of the inner wall portion. A fluid striking the projecting surface for generating turbulent flow is partially disturbed to form a turbulent flow before entering an area in which the rear impeller is provided. The turbulent flow suppresses flow separation of a fluid flowing along the surfaces of rear blades of the rear impeller from the surfaces of the rear blades.

摘要翻译： 提供了在不改变前叶轮，后叶轮或中间静止部分的情况下实现在目标操作点处具有降低的噪声的反向旋转轴流风扇。 在从中间静止部分到后部叶轮的一侧的位置处，在壳体的内壁部分上形成包括用于产生湍流的突出表面的环形肋，所述突出表面沿着内壁部分的径向向内延伸， 在内壁部的圆周方向上连续延伸。 撞击突出表面以产生湍流的流体在进入其中设置后叶轮的区域之前部分地被扰动以形成湍流。 湍流抑制沿着后叶片的后叶的表面流动的流体与后叶片的表面的流动分离。

公开(公告)号：US20110095423A1

公开(公告)日：2011-04-28

申请号：US13000391

申请日：2009-10-27

申请人： Naomichi Ohashi ,  Shigeaki Sakatani ,  Arata Kishi ,  Atsushi Yamaguchi ,  Hidenori Miyakawa

发明人： Naomichi Ohashi ,  Shigeaki Sakatani ,  Arata Kishi ,  Atsushi Yamaguchi ,  Hidenori Miyakawa

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L23/49894 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13566 ,  H01L2224/16058 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H05K3/3436 ,  H05K3/3452 ,  H05K3/3463 ,  H05K3/3484 ,  H05K2201/10977 ,  H05K2201/10992 ,  Y02P70/613 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/0105

摘要： A semiconductor device mounted structure includes a semiconductor device having a plurality first electrodes, a circuit board having a plurality of second electrodes, a plurality of bumps respectively formed on the plurality of first electrodes, a plurality of bonding members respectively positioned between the bumps and the second electrodes to electrically connect the first electrodes to the second electrodes via the bumps, and a plurality of reinforcing resin members respectively positioned around the bonding members so as to cover at least the bonding members and bonding regions between the bonding members and the bumps. Adjacent reinforcing resin members are spaced away from each other so as not to have contact with each other without being in contact with the semiconductor device. This semiconductor device mounted structure enhances the reliability of joints in impact resistance and makes it easy to repair it.

摘要翻译： 半导体器件安装结构包括具有多个第一电极的半导体器件，具有多个第二电极的电路板，分别形成在多个第一电极上的多个凸块，分别位于凸块和第二电极之间的多个接合部件 第二电极，经由凸块将第一电极与第二电极电连接;以及多个加强树脂部件，分别位于接合部件周围，以至少覆盖接合部件和接合部件与凸块之间的接合区域。 相邻的增强树脂构件彼此间隔开，以便不与半导体器件接触而彼此不接触。 该半导体器件安装结构提高了接头在耐冲击性方面的可靠性，并且使其易于修复。

公开(公告)号：US07905318B2

公开(公告)日：2011-03-15

申请号：US12081498

申请日：2008-04-16

申请人： Atsushi Yamaguchi ,  Junichi Ishimine ,  Masahiro Suzuki ,  Tadashi Katsui ,  Shin-ichirou Kouno ,  Akira Takahashi ,  Akihiro Watanabe ,  Tomohiro Okazaki

发明人： Atsushi Yamaguchi ,  Junichi Ishimine ,  Masahiro Suzuki ,  Tadashi Katsui ,  Shin-ichirou Kouno ,  Akira Takahashi ,  Akihiro Watanabe ,  Tomohiro Okazaki

IPC分类号： A47B81/06 ,  E04F17/04 ,  F02K1/08 ,  G10K11/04 ,  H05K3/30 ,  H05K5/00 ,  H05K7/20

摘要： A box-shaped enclosure of a storage box includes a deadening wall or walls defining a storage space between first and second planes. The storage space is open at the first and second planes. A deadening wall member extends along the first plane. An auxiliary box-shaped enclosure is connected to the box-shaped enclosure so as to close the first plane of the box-shaped enclosure. The auxiliary box-shaped enclosure defines an auxiliary space isolated from the storage space with a deadening wall member. The storage space is connected to the fresh air through the ventilation opening and the auxiliary space. The deadening wall or walls of the box-shaped enclosure and the deadening wall member serve to prevent the leakage of the operating sound.

公开(公告)号：US20100224398A1

公开(公告)日：2010-09-09

申请号：US12738430

申请日：2008-10-16

申请人： Koso Matsuno ,  Atsushi Yamaguchi ,  Shigeaki Sakatani ,  Hidenori Miyakawa ,  Mikiya Ueda

发明人： Koso Matsuno ,  Atsushi Yamaguchi ,  Shigeaki Sakatani ,  Hidenori Miyakawa ,  Mikiya Ueda

IPC分类号： H05K1/18

CPC分类号： H01L21/563 ,  H01L23/13 ,  H01L23/3121 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/83102 ,  H01L2224/83855 ,  H01L2224/92125 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/15311 ,  H01L2924/15313 ,  H05K1/0224 ,  H05K3/28 ,  H05K3/3452 ,  H05K2201/0969 ,  H05K2201/0989 ,  H05K2201/10977

摘要： In order to easily inject underfill resin and perform molding with reliability, groove sections are formed on a surface of a circuit board such that the ends of the groove sections extend to semiconductor elements. Low-viscosity underfill resin applied dropwise is guided by the groove sections and flows between the circuit board and the semiconductor elements. The underfill resin hardly expands to regions outside the semiconductor elements.

摘要翻译： 为了容易地注入底部填充树脂并且可靠地进行模制，在电路板的表面上形成槽部，使得槽部的端部延伸到半导体元件。 滴下的低粘度底部填充树脂由槽部引导，在电路基板与半导体元件之间流动。 底部填充树脂几乎不扩展到半导体元件外部的区域。

公开(公告)号：US07773281B2

公开(公告)日：2010-08-10

申请号：US12496334

申请日：2009-07-01

申请人： Yoshiaki Maeno ,  Atsushi Yamaguchi

发明人： Yoshiaki Maeno ,  Atsushi Yamaguchi

IPC分类号： G02B26/08

CPC分类号： G02B26/085 ,  G02B26/0875 ,  G02B26/105

摘要： A beam irradiation apparatus includes: an optical element which changes a travel direction of a laser beam by being rotated in a predetermined direction; an actuator which rotates the optical element in the direction; a refractive element which is disposed in the actuator and rotates in association with rotation of the optical element; a servo beam source which emits a servo beam to the refractive element; a photodetector which receives the servo beam refracted by the refractive element and outputs a signal according to a position where the servo beam is received; and a power adjustment circuit which adjusts emission power of the servo beam source. The power adjustment circuit adjusts the emission power so that a reception amount of the servo beam in the photodetector becomes constant based on an output signal from the photodetector.

摘要翻译： 光束照射装置包括：光学元件，其通过沿预定方向旋转来改变激光束的行进方向; 沿该方向旋转光学元件的致动器; 折射元件，设置在致动器中并与光学元件的旋转相关联地旋转; 将伺服光束发射到折射元件的伺服光束源; 接收由折射元件折射的伺服光束并根据接收伺服光束的位置输出信号的光电检测器; 以及调整伺服光束源的发射功率的功率调节电路。 功率调整电路基于来自光电检测器的输出信号来调整发光功率，使得光电检测器中的伺服光束的接收量变得恒定。

公开(公告)号：US07773277B2

公开(公告)日：2010-08-10

申请号：US12047038

申请日：2008-03-12

申请人： Atsushi Yamaguchi ,  Masato Yamada ,  Yoshiaki Maeno

发明人： Atsushi Yamaguchi ,  Masato Yamada ,  Yoshiaki Maeno

IPC分类号： G02B26/08

CPC分类号： G01S7/4811 ,  G01S7/4816 ,  G01S7/4817 ,  G01S7/491 ,  G01S17/48 ,  G01S17/936 ,  G02B26/0875 ,  G02B26/101

摘要： A light refracting element formed in parallel plate shape is attached to a support shaft of a mirror holder, a semiconductor laser and a PSD are disposed at positions between which the light refracting element is sandwiched. The light refracting element is rotated by rotation of the mirror holder, and whereby a laser beam irradiation position is changed on a light acceptance surface of PSD. The laser beam irradiation position on a light acceptance surface corresponds to the mirror rotation position, so that the mirror rotation position and a laser beam scanning position in a target area can be detected based on an output from the PSD.

摘要翻译： 形成为平行板状的光折射元件被安装在镜保持器的支撑轴上，半导体激光器和PSD被设置在夹着光折射元件的位置。 光折射元件通过镜保持器的旋转而旋转，并且由此在PSD的光接收表面上改变激光束照射位置。 光接收表面上的激光束照射位置对应于反射镜旋转位置，从而可以基于PSD的输出来检测目标区域中的反射镜旋转位置和激光束扫描位置。

公开(公告)号：US20100188648A1

公开(公告)日：2010-07-29

申请号：US12695497

申请日：2010-01-28

申请人： Yoshiaki Maeno ,  Atsushi Yamaguchi ,  Mitsutaka Yamaguchi

发明人： Yoshiaki Maeno ,  Atsushi Yamaguchi ,  Mitsutaka Yamaguchi

IPC分类号： G01C3/08 ,  G01J1/20

CPC分类号： G01J1/4257 ,  G01S7/4811 ,  G01S7/4817 ,  G01S17/026 ,  G01S17/10 ,  G01S17/42 ,  G01S17/936

摘要： A beam irradiation device includes: a laser light source for emitting laser light; an actuator which scans a targeted area with the laser light; a servo optical system which changes a propagating direction of servo light in response to driving of the actuator; a photodetector which receives the servo light to output a signal depending on a light receiving position of the servo light; an actuator controlling section which controls the actuator based on the signal to be outputted from the photodetector; and a laser controlling section which controls the laser light source based on the signal to be outputted from the photodetector. The laser controlling section controls the laser light source to emit the laser light in a pulse manner at a timing when the light receiving position of the servo light coincides with a predetermined targeted position.

摘要翻译： 光束照射装置包括：用于发射激光的激光源; 用激光扫描目标区域的致动器; 伺服光学系统，其响应于致动器的驱动而改变伺服光的传播方向; 接收所述伺服光以根据所述伺服光的光接收位置输出信号的光电检测器; 致动器控制部，其基于从所述光检测器输出的信号来控制所述致动器; 以及激光控制部，其基于从光电检测器输出的信号来控制激光光源。 在伺服光的光接收位置与预定目标位置一致的时刻，激光控制部分控制激光光源以脉冲方式发射激光。