Superconducting magnet apparatus
    31.
    发明授权
    Superconducting magnet apparatus 有权
    超导磁体设备

    公开(公告)号:US08134433B2

    公开(公告)日:2012-03-13

    申请号:US10950392

    申请日:2004-09-28

    IPC分类号: H01F6/00

    CPC分类号: G01R33/3806 G01R33/3815

    摘要: Main coils, counteracting coils and correction coils, each forming superconducting coil, are enclosed in two cooling medium chamber facing to each other and an imaging region is formed between the two cooling medium chamber positioned in each vacuum chamber, the main coils being divided into two pieces to reduce the current density and the maximum experience magnetic filed and compression stress.

    摘要翻译: 每个形成超导线圈的主线圈,反作用线圈和校正线圈被封闭在彼此相对的两个冷却介质腔中,并且在位于每个真空室中的两个冷却介质室之间形成成像区域,主线圈被分成两个 减少电流密度和最大体积磁场和压缩应力。

    Semiconductor device and communications terminal and automobile having the same
    33.
    发明授权
    Semiconductor device and communications terminal and automobile having the same 有权
    半导体装置和通信终端和汽车具有相同的功能

    公开(公告)号:US07574312B2

    公开(公告)日:2009-08-11

    申请号:US11268662

    申请日:2005-11-08

    IPC分类号: G01F23/00

    CPC分类号: H03H7/38 G06F1/26

    摘要: A semiconductor device is disclosed in which resistance to the influence of external noise on internal power source network is improved. A semiconductor device operating at any predetermined frequency among a plurality thereof, and having power source networks for supplying power from a power source to internal functional units in the semiconductor device comprises switches, a storage unit, and a control unit. The switches are provided in the power source networks, and switch ON/OFF the supply of power from the power source to the functional units. In the storage unit are mapped and stored a plurality of predetermined operating frequencies and switching information designating an ON state or an OFF state for the switches. The control unit reads, from the storage, switching information corresponding to a current operating frequency, and controls the ON/OFF switching of the switches in accordance with the read switching information.

    摘要翻译: 公开了一种半导体器件,其中改善了对外部噪声对内部电源网络的影响的抵抗力。 一种半导体器件,在其多个中以任何预定频率工作,并具有用于从电源向半导体器件中的内部功能单元供电的电源网络,包括开关,存储单元和控制单元。 开关设置在电源网络中,并从电源向功能单元接通/断开电源。 在存储单元中映射并存储多个预定操作频率和指定开关的ON状态或OFF状态的切换信息。 控制单元从存储器读取与当前工作频率相对应的切换信息,并且根据读取的切换信息来控制开关的ON / OFF切换。

    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
    34.
    发明申请
    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage 审中-公开
    写入根据阈值电压电平变化存储信息的非易失性半导体存储器件的方法

    公开(公告)号:US20090010070A1

    公开(公告)日:2009-01-08

    申请号:US12149422

    申请日:2008-05-01

    IPC分类号: G11C16/06 G11C7/00

    摘要: In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.

    摘要翻译: 在闪速存储器中,在初始写入操作结束后,与经过写入的存储器单元相关联的每个位线被预充电,并且与不经过写入的存储器单元相关联的每个位线被放电并被验证以检测存储器 小区阈值电压和这样检测的存储单元经受附加写入。 可以验证验证,而不受流过不经过写入的存储器单元的电流的影响。 所有存储单元可以准确地设置其各自的阈值电压。

    Flexible printed-circuit board
    35.
    发明申请
    Flexible printed-circuit board 审中-公开
    柔性印刷电路板

    公开(公告)号:US20090008131A1

    公开(公告)日:2009-01-08

    申请号:US11659131

    申请日:2005-07-28

    IPC分类号: H05K1/02

    摘要: A flexible printed board that is adapted to high-speed transmission and can mount a plurality of connectors at low cost is provided. The board comprises a flexible printed board body 100 that has a first side 100a and a second side 100b opposed to each other, and an overlap portion 105 formed by bending its one end; a plurality of wiring lines 101 that are arranged on the first side 100a of the body substantially in parallel to each other; first pads 103 that are connected to respective ends of wiring lines, wider than the wiring lines and formed on the first-side surface 105a of the overlap potion; and second pads 104 that are located at respective ends of wiring lines, wider than the wiring lines and formed on the second-side surface 105b of the overlap potion. The wiring lines 101a with the first pads connected thereto and the wiring lines 101b with the second pads 104 connected thereto are alternatively arranged on the first side.

    摘要翻译: 提供了适用于高速传输并可以以低成本安装多个连接器的柔性印刷电路板。 板包括具有彼此相对的第一侧100a和第二侧面100b的柔性印刷电路板主体100和通过使其一端弯曲形成的重叠部分105; 布置在主体的第一侧100a上的多个布线101基本上彼此平行; 第一焊盘103,其连接到布线的相应端部,比布线宽,并形成在重叠部分的第一侧表面105a上; 以及第二焊盘104,其位于布线的相应端部,比布线宽,并且形成在重叠部分的第二侧表面105b上。 具有与其连接的第一焊盘的布线101a和与其连接的第二焊盘104的布线101b交替布置在第一侧上。

    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
    37.
    发明申请
    Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage 有权
    写入根据阈值电压电平变化存储信息的非易失性半导体存储器件的方法

    公开(公告)号:US20070019478A1

    公开(公告)日:2007-01-25

    申请号:US11488621

    申请日:2006-07-19

    IPC分类号: G11C11/34 G11C16/06 G11C16/04

    摘要: In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.

    摘要翻译: 在闪速存储器中,在初始写入操作结束后,与经过写入的存储器单元相关联的每个位线被预充电,并且与不经过写入的存储器单元相关联的每个位线被放电并被验证以检测存储器 小区阈值电压和这样检测的存储单元经受附加写入。 可以验证验证,而不受流过不经过写入的存储器单元的电流的影响。 所有存储单元可以准确地设置其各自的阈值电压。

    Color cathode ray tube
    39.
    发明授权
    Color cathode ray tube 失效
    彩色阴极射线管

    公开(公告)号:US07045941B2

    公开(公告)日:2006-05-16

    申请号:US10766868

    申请日:2004-01-30

    IPC分类号: H01J29/80

    摘要: A shadow mask has a main mask and an auxiliary mask overlapped on the main mask. Electron beam passage apertures formed in the main mask and the auxiliary mask are arranged at given pitches in the direction of a major axis. Each electron beam passage aperture of the auxiliary mask is a communicating hole, which is formed of a smaller hole in that surface of the auxiliary mask which is in contact with the main mask and a larger hole opening in the opposite surface of the auxiliary mask. The smaller and larger holes of each electron beam passage aperture of the auxiliary mask have their respective central axes extending coaxially with each other and substantially at right angles to the surface of the auxiliary mask in the direction of the major axis.

    摘要翻译: 荫罩具有主掩模和与主掩模重叠的辅助掩模。 形成在主掩模和辅助掩模中的电子束通过孔沿长轴方向以给定的间距布置。 辅助掩模的每个电子束通过孔是在与主掩模接触的辅助掩模的表面中由较小的孔形成的连通孔和在辅助掩模的相对表面中较大的孔。 辅助掩模的每个电子束通过孔的较小和较大的孔具有彼此同轴延伸并且在辅助掩模的表面上与长轴方向基本成直角延伸的各自的中心轴。

    Semiconductor laser device
    40.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号:US06947461B2

    公开(公告)日:2005-09-20

    申请号:US10373868

    申请日:2003-02-27

    申请人: Takeshi Nakayama

    发明人: Takeshi Nakayama

    摘要: A semiconductor laser device includes a p-InP cladding layer, an active region, a first n-InP cladding layer, a second n-InP cladding layer, and an n-InGaAsP cladding layer with a thickness between 0.05 μm and 0.3 μm, sandwiched by the first and second n-laP cladding layers and laminated at a position closer to the active region than a position at which optical intensity of a near-field pattern of laser light emitted from the active region becomes substantially zero. The semiconductor laser device exhibits a small reduction in the optical output even when a large current flows, and has a high slope efficiency without changing the near-field pattern a great deal.

    摘要翻译: 半导体激光器件包括p-InP包层,有源区,第一n-InP包层,第n-InP包层和厚度在0.05μm和0.3μm之间的n-InGaAsP包层,夹在 通过第一和第二n-laP包层,并且层叠在比从有源区域发射的激光的近场图案的光强度变得基本为零的位置处更靠近有源区的位置。 即使大电流流动,半导体激光器件也显示出小的光输出的降低,并且在不改变近场图案的情况下具有高的斜率效率。