公开(公告)号：US20170191569A1

公开(公告)日：2017-07-06

申请号：US15235441

申请日：2016-08-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuefei SUN ,  Zhengliang LI ,  Jianhua DU

IPC: F16K3/02

CPC classification number: F16K3/0218 ,  F16K3/06

Abstract: The present disclosure provides a vacuum-pumping device and a method for operating the vacuum-pumping device. The vacuum-pumping device includes an outer casing, a chamber defined by the outer casing, and a sealing cover. The outer casing includes a through-hole region where a plurality of through-holes is provided, the sealing cover is connected to the outer casing and capable of moving between a first state in which the through-holes are covered by the sealing cover to seal the chamber, and a second state in which at least parts of the through-holes are not covered by the sealing cover to form channels for the chamber.

公开(公告)号：US20160380114A1

公开(公告)日：2016-12-29

申请号：US15096807

申请日：2016-04-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiangchun KONG ,  Zhanfeng CAO ,  Wei ZHANG ,  Bin ZHANG ,  Xiaolong HE ,  Jincheng GAO ,  Qi YAO ,  Zhengliang LI ,  Chuanxiang XU

IPC: H01L29/786 ,  G02F1/1362 ,  G02F1/1343 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L29/78696 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2001/136222 ,  G02F2201/40 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.

Abstract translation: 通过本公开提供薄膜晶体管，阵列基板和显示装置。 薄膜晶体管在基底基板上，沟道的宽度边缘的轮廓在垂直于基底表面的方向上包括上下弯曲部分。

公开(公告)号：US20160349589A1

公开(公告)日：2016-12-01

申请号：US15086933

申请日：2016-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xuefei SUN ,  Zhengliang LI ,  Zhanfeng CAO ,  Xiangchun KONG ,  Qi YAO ,  Jincheng GAO ,  Feng GUAN ,  Xiaolong HE ,  Bin ZHANG ,  Wei ZHANG

IPC: G02F1/157 ,  G02F1/163 ,  G02F1/1368 ,  G09G3/36 ,  G02F1/1335 ,  G09G3/38 ,  G09G3/20 ,  G02F1/155 ,  G02F1/1343

CPC classification number: G02F1/157 ,  G02F1/155 ,  G02F1/163 ,  G02F2201/44 ,  G09G3/2003 ,  G09G3/32 ,  G09G3/3433 ,  G09G3/36 ,  G09G3/38 ,  G09G2300/023 ,  G09G2300/04

Abstract: A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.

Abstract translation: 显示装置，其制造方法，其驱动方法和显示装置。 显示装置包括：显示面板; 以及位于显示面板的光出射侧的电致变色装置。 电致变色装置和显示面板共享显示面板中的靠近显示面板的光出射侧的第一基底基板和第一透明电极。

公开(公告)号：US20160069576A1

公开(公告)日：2016-03-10

申请号：US14811181

申请日：2015-07-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Limin YUE ,  Zhengliang LI ,  Jun MA

IPC: F24F3/16

CPC classification number: F24F3/161 ,  F24F2110/64

Abstract: The present disclosure provides an air shower system and a dressing room. The air shower system includes: an air shower room, inside which is provided nozzle components; a particle monitor, configured to detect concentration of particles in air outside the air shower room; a controller, configured to control a working time of the nozzle component according to the concentration of particles in the air outside the air shower room. The dressing room is provided the above air shower system.

Abstract translation: 本公开提供了一种空气淋浴系统和更衣室。 空气淋浴系统包括：一个空气淋浴房，内部设有喷嘴部件; 颗粒监测器，用于检测空气淋浴房外空气中颗粒的浓度; 控制器，被配置为根据空气淋浴房外的空气中的颗粒的浓度来控制喷嘴部件的工作时间。 更衣室设有上述空气淋浴系统。

公开(公告)号：US20250151504A1

公开(公告)日：2025-05-08

申请号：US19017860

申请日：2025-01-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Changhan HSIEH ,  Wei YANG ,  Liwen DONG ,  Jiayu HE ,  Dongfei HOU ,  Zhen ZHANG ,  Ce NING ,  Xin GU ,  Zhengliang LI

IPC: H10K10/46 ,  G02F1/1333 ,  G02F1/1362 ,  H10K19/10

Abstract: An array substrate includes a base substrate, a first conductive layer, a first electrode, an organic planarization layer and an organic active layer. The first conductive layer is provided on a side of the base substrate. The first electrode is provided on a side of the first conductive layer away from the base substrate, an orthographic projection of the first electrode on the base substrate overlapping an orthographic projection of the drain electrode on the base substrate. The organic planarization layer is provided on a side of the first electrode away from the base substrate, first via holes being provided in the organic planarization layer. The organic active layer is provided on a side of the organic planarization layer away from the base substrate, the organic active layer being connected to the source electrode by a first via hole and connected to the drain electrode by a first via hole.

公开(公告)号：US20250089303A1

公开(公告)日：2025-03-13

申请号：US18292558

申请日：2022-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Guangcai YUAN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Dongfang WANG ,  Zhengliang LI ,  Liping LEI ,  Chen XU

IPC: H01L29/786 ,  G09G3/20 ,  G11C19/28 ,  H01L29/08

Abstract: A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.

公开(公告)号：US20240332425A1

公开(公告)日：2024-10-03

申请号：US18028009

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Fangqing WEN ,  Ce NING ,  Hehe HU ,  Nianqi YAO ,  Kun ZHAO ,  Zhengliang LI ,  Jie HUANG ,  Feifei LI ,  Yan QU ,  Liping LEI

IPC: H01L29/786 ,  H01L25/07

CPC classification number: H01L29/7869 ,  H01L25/074

Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.

公开(公告)号：US20240304698A1

公开(公告)日：2024-09-12

申请号：US18028114

申请日：2022-03-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI

IPC: H01L29/49 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/4908 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.

公开(公告)号：US20240297255A1

公开(公告)日：2024-09-05

申请号：US17919301

申请日：2021-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie HUANG ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.

公开(公告)号：US20240250178A1

公开(公告)日：2024-07-25

申请号：US18017649

申请日：2022-02-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Kun ZHAO ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.