Abstract:
Disclosed are a composite material and a method for preparing the same. The composite material is consisted of TiO2 and BaZn1.2Co0.8Fe16O27. The composite material of the invention has the advantages of high absorption frequency band, good compatibility and wide frequency band, and it is applicable for the shell protection material of a mobile phone or a TV set, thereby absorbing the electromagnetic wave band that is the most harmful to human bodies, without influencing the normal communication function of an electronic device, for example, a mobile phone.
Abstract:
A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.
Abstract:
A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a profile of a width edge of the channel includes an up-and-down curved section in a direction perpendicular to a surface of the base substrate.
Abstract:
A display device, a manufacturing method thereof, a driving method thereof and a display apparatus. The display device includes: a display panel; and an electrochromic device located on a light exiting side of the display panel. The electrochromic device and the display panel share a first base substrate and a first transparent electrode in the display panel that are close to the light exiting side of the display panel.
Abstract:
The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.
Abstract:
The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the array substrate, and a display device. The thin film transistor includes a substrate and a gate, an insulation layer, an active layer, a source and a drain which are provided on the substrate. A spacer layer is also provided between the gate and the active layer, and the spacer layer overlaps at least with one of the gate and the active layer having a smaller area in an orthographic projection direction. The spacer layer can effectively prevent material forming the gate from being diffused into the active layer, thereby ensuring stability of performance of the thin film transistor. In the array substrate utilizing the thin film transistor, the spacer layer further extends to a region corresponding to a gate line.
Abstract:
An array substrate and a display device are disclosed. The array substrate includes a peripheral area in which a plurality of gate electrode material lines, a plurality of source-drain electrode material lines and a plurality of first metal lines are disposed. Overlapping areas are provided between or among the gate electrode material lines, the source-drain material lines and the first metal lines; a number of the overlapping areas of the source-drain material lines and the first metal lines is less than a number of the overlapping areas of the source-drain material lines and the gate electrode material lines; the gate electrode material lines, the source-drain material lines and the first metal lines are configured as connecting lines of circuits in the peripheral area.
Abstract:
The present disclosure discloses an X-ray flat-panel detector and a method for preparing the same, and a white insulating material. The X-ray flat-panel detector includes: a thin-film transistor substrate; an insulating reflection layer, which is provided on the thin-film transistor substrate and has a reflection function, wherein the insulating reflection layer is provided with a contact hole through which a source electrode of the thin-film transistor substrate is exposed; a pixel electrode, which is provided on the insulating reflection layer, wherein the pixel electrode is electrically connected to the source electrode of the thin-film transistor substrate via the contact hole; a photodiode, which covers the pixel electrode; an electrode, which is provided on the photodiode; and an X-ray conversion layer, which is provided on the electrode.