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    Nonvolatile semiconductor memory device and method of fabricating the same
    32.
    发明申请
    Nonvolatile semiconductor memory device and method of fabricating the same 审中-公开
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US20070052001A1

    公开(公告)日：2007-03-08

    申请号：US11502426

    申请日：2006-08-11

    Applicant: Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

    Inventor： Seung-eon Ahn ,  Jung-bin Yun ,  In-kyeong Yoo ,  Dong-chul Kim ,  Tae-hoon Kim

    IPC: H01L29/76

    CPC classification number: H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    Abstract: A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.

    Abstract translation: 提供一种非易失性半导体存储器件及其制造方法。 非易失性存储器件可以包括连接到开关器件的开关器件和存储节点。 存储节点可以包括下电极，数据存储层和上电极。 数据存储层可以包括在第一电压处形成电流路径的第一区域和围绕第一区域的第二区域，其中电流路径形成在大于第一电压的第二电压处。 第一区域可以被定位成接触上电极和下电极。

    Method of fabricating memory device utilizing carbon nanotubes
    33.
    发明申请
    Method of fabricating memory device utilizing carbon nanotubes 失效
    使用碳纳米管制造记忆装置的方法

    公开(公告)号：US20060252276A1

    公开(公告)日：2006-11-09

    申请号：US11352310

    申请日：2006-02-13

    Applicant: Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

    Inventor： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

    IPC: H01L21/31

    CPC classification number: B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

    Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

    Abstract translation: 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

    Method of horizontally growing carbon nanotubes and device having the same
    34.
    发明授权
    Method of horizontally growing carbon nanotubes and device having the same 有权
    水平生长碳纳米管的方法及其装置

    公开(公告)号：US07115306B2

    公开(公告)日：2006-10-03

    申请号：US11036379

    申请日：2005-01-18

    Applicant: Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    Inventor： Soo-hwan Jeong ,  Wan-jun Park ,  In-kyeong Yoo ,  Ju-hye Ko

    IPC: H05H1/24

    CPC classification number: C30B29/602 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C23C26/00 ,  C30B25/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

    Abstract: Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.

    Abstract translation: 提供生长碳纳米管和碳纳米管装置的方法。 该方法包括：在基底上沉积铝层; 在所述基板上形成绝缘层以覆盖所述铝层; 将绝缘层和铝层图案化在基板上以暴露铝层的一侧; 在铝层的暴露侧形成多个孔至预定深度; 在所述孔的底部沉积催化剂金属层; 并从催化剂金属层生长碳纳米管。

    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device
    35.
    发明授权
    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device 有权
    具有晶体管和一个电阻元件作为存储装置的存储装置和用于驱动存储装置的方法

    公开(公告)号：US07009868B2

    公开(公告)日：2006-03-07

    申请号：US10995116

    申请日：2004-11-24

    Applicant: In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    Inventor： In-kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC: G11C11/00

    CPC classification number: H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    Abstract: A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    Abstract translation: 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Electron emission lithography apparatus and method using a selectively grown carbon nanotube
    37.
    发明授权
    Electron emission lithography apparatus and method using a selectively grown carbon nanotube 失效
    电子发射光刻设备和使用选择性生长的碳纳米管的方法

    公开(公告)号：US06794666B2

    公开(公告)日：2004-09-21

    申请号：US10160102

    申请日：2002-06-04

    Applicant: Won-bong Choi ,  In-kyeong Yoo

    Inventor： Won-bong Choi ,  In-kyeong Yoo

    IPC: G21G500

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J3/022 ,  H01J2237/06341 ,  H01J2237/3175 ,  Y10S977/901

    Abstract: An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.

    Abstract translation: 一种使用选择性生长的碳纳米管作为电子发射源的电子发射光刻设备和方法，其中电子发射光刻设备包括安装在室内的电子发射源和与电子发射源分离预定距离的电台 并且其上安装有样品，并且其中所述电子发射源是具有电子发射能力的碳纳米管。 由于使用碳纳米管作为电子发射源，可以以精确的临界尺寸进行光刻处理，从而防止在基板的中心与其边缘之间发生偏差，并且可以实现高生产率。

    Ferroelectric read and write memory and driving method thereof
    38.
    发明授权
    Ferroelectric read and write memory and driving method thereof 失效
    铁电读写存储器及其驱动方法

    公开(公告)号：US5699290A

    公开(公告)日：1997-12-16

    申请号：US659885

    申请日：1996-06-07

    Applicant: In-kyeong Yoo

    Inventor： In-kyeong Yoo

    IPC: G11C11/22 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  G11C11/50

    CPC classification number: G11C11/22

    Abstract: A ferroelectric read and write memory of a nondestructive write and read (NDWR) method in which charges of a gate insulating layer induced by a ferroelectric capacitor are discharged via a separate path, includes a source and a drain provided in both side of a well; a gate insulating layer provided on the well; a gate electrode provided on the gate insulating layer; a ferroelectric layer provided on the gate electrode, to which corresponding charges are induced in the gate electrode depending on its polar states; an upper electrode provided on the ferroelectric layer; and a charge discharging means electrically connected to the gate electrode for discharging charges induced in the gate insulating layer. In a driving method thereof, charges of the gate insulating layer induced by the ferroelectric layer are directly discharged via the gate electrode to make a logic "low" state by blocking the current flow between the source and insulating layer through the well during a binary logic information write operation. Therefore, if the information is written in a non-inversion state of the polarization, a fatigue of the ferroelectric layer can be prevented. Also, as described above, since the remained polarization still exists during the repeated information write operations, the information can be written at a low voltage.

    Abstract translation: 一种非铁磁读写（NPWR）方法的铁电读和写存储器，其中由铁电电容器引起的栅极绝缘层的电荷通过单独的路径排出，包括设置在阱两侧的源极和漏极; 设在井上的栅绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在栅电极上的铁电层，根据极极状态在栅电极中引起相应的电荷; 设置在所述强电介质层上的上电极; 以及电连接到栅电极用于对栅极绝缘层中感应的电荷进行放电的电荷放电装置。 在其驱动方法中，由铁电体层引起的栅极绝缘层的电荷通过栅电极直接放电，以在二进制逻辑期间通过阱阻塞源极和绝缘层之间的电流流动而形成逻辑“低”状态 信息写入操作。 因此，如果信息被写入极化的非反转状态，则可以防止铁电层的疲劳。 此外，如上所述，由于在重复信息写入操作期间仍然存在剩余的极化，所以可以以低电压写入信息。

    Non-volatile memory device and method of manufacturing the same
    40.
    发明申请
    Non-volatile memory device and method of manufacturing the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20110085368A1

    公开(公告)日：2011-04-14

    申请号：US12659516

    申请日：2010-03-11

    Applicant: Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    Inventor： Ho-jung Kim ,  In-kyeong Yoo ,  Chang-jung Kim ,  Ki-ha Hong

    IPC: G11C5/06 ,  G11C11/00 ,  H01L21/82

    CPC classification number: H01L27/222 ,  G11C13/0002 ,  G11C2213/71 ,  G11C2213/73 ,  G11C2213/79 ,  H01L27/24

    Abstract: The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.

    Abstract translation: 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。

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