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    LIGHT-EMITTING DEVICE
    35.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20110227120A1

    公开(公告)日：2011-09-22

    申请号：US13152026

    申请日：2011-06-02

    申请人： Yu-Chen YANG ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

    发明人： Yu-Chen YANG ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

    IPC分类号： H01L33/60

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/641 ,  H01L2224/48463 ,  H01L2933/0083

    摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm2 and 6.2×104 μm2.

    摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×10 4μm2和​​6.2×10 4μm2之间。

    Light-emitting diode device and manufacturing method therof
    36.
    发明申请
    Light-emitting diode device and manufacturing method therof 审中-公开
    发光二极管器件及其制造方法

    公开(公告)号：US20080303047A1

    公开(公告)日：2008-12-11

    申请号：US12153098

    申请日：2008-05-14

    申请人： Chien-Fu Shen ,  De-Shan Kuo ,  Cheng-Ta Kuo

    发明人： Chien-Fu Shen ,  De-Shan Kuo ,  Cheng-Ta Kuo

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/46 ,  H01L33/22

    摘要： A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.

    摘要翻译： 公开了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，多个微透镜，反射器，第一导电类型半导体层，有源层，第二导电类型半导体 层，第一电极和第二电极。 基板在其上表面上具有多个微透镜。 第一导电型半导体层位于基板的上表面上。 有源层和第二导电类型半导体层依次位于第一导电类型半导体层的一部分上。 第一电极位于由有源层未覆盖的第一导电类型半导体层的另一部分上。 第二电极在第二导电类型半导体层上。 反射层位于基板的下表面上。

    Light-emitting diode
    37.
    发明申请
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US20050205875A1

    公开(公告)日：2005-09-22

    申请号：US10917928

    申请日：2004-08-13

    申请人： Shih-Chang Shei ,  Yen-Wei Chen ,  Wei-Shou Chen ,  Chia-Sheng Chang ,  Hsin-Ming Lo ,  Chien-Fu Shen

    发明人： Shih-Chang Shei ,  Yen-Wei Chen ,  Wei-Shou Chen ,  Chia-Sheng Chang ,  Hsin-Ming Lo ,  Chien-Fu Shen

    IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/42

    CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/42

    摘要： A light-emitting diode (LED) is described. The light-emitting diode comprises a metal substrate, a reflective layer, a first transparent conductive layer, an illuminant epitaxial structure and a second transparent conductive layer stacked in sequence, and an electrode located on a portion of the second transparent conductive layer. A thickness of the metal substrate is between 30 μm and 150 μm. In addition, the light-emitting diode can further comprises a supporting substrate and an adhesive layer. The adhesive layer is located between the supporting substrate and the metal substrate to adhere the supporting substrate onto the metal substrate.

    摘要翻译： 描述了发光二极管（LED）。 发光二极管包括金属基板，反射层，第一透明导电层，发光体外延结构和依次层叠的第二透明导电层，以及位于第二透明导电层的一部分上的电极。 金属基板的厚度在30μm到150μm之间。 此外，发光二极管还可以包括支撑衬底和粘合剂层。 粘合剂层位于支撑基板和金属基板之间，以将支撑基板粘附到金属基板上。

    Light-emitting device
    38.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08823039B2

    公开(公告)日：2014-09-02

    申请号：US13459342

    申请日：2012-04-30

    申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

    发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

    IPC分类号： H01L33/62

    CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

    摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.

    摘要翻译： 本公开公开了一种发光装置。 发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上​​表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。 第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

    Optoelectronic device
    39.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号：US09324691B2

    公开(公告)日：2016-04-26

    申请号：US12830059

    申请日：2010-07-02

    申请人： Chang-Huei Jing ,  Chien-Fu Shen

    发明人： Chang-Huei Jing ,  Chien-Fu Shen

    IPC分类号： H01L33/38 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62

    CPC分类号： H01L33/387 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/0012 ,  H01L33/20 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.

    摘要翻译： 一种光电器件，包括：基板; 多个半导体单元彼此电连接并且共同设置在所述基板上，其中每个半导体单元包括第一半导体层，第二半导体层和插入其间的有源区; 分别设置在每个第一半导体层上的多个第一电极; 以及分别设置在每个第二半导体层上的多个第二电极，其中所述第一电极中的至少一个包括第一延伸部，并且所述第二电极中的至少一个包括第二延伸部，其中所述第一延伸部和 第二延伸部包括不与半导体单元的边缘平行的曲线。

    Light-emitting device having a trench in a semiconductor layer
    40.
    发明授权
    Light-emitting device having a trench in a semiconductor layer 有权
    在半导体层中具有沟槽的发光器件

    公开(公告)号：US08872204B2

    公开(公告)日：2014-10-28

    申请号：US13152026

    申请日：2011-06-02

    申请人： Yu-Chen Yang ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

    发明人： Yu-Chen Yang ,  Li-Ping Jou ,  Jui-Hung Yeh ,  Chien-Fu Shen

    IPC分类号： H01L33/60 ,  H01L33/38 ,  H01L33/20 ,  H01L33/64 ,  H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/641 ,  H01L2224/48463 ,  H01L2933/0083

    摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm2 and 6.2×104 μm2.

    摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×10 4μm2和​​6.2×10 4μm2之间。