公开(公告)号：US20080303047A1

公开(公告)日：2008-12-11

申请号：US12153098

申请日：2008-05-14

申请人： Chien-Fu Shen ,  De-Shan Kuo ,  Cheng-Ta Kuo

发明人： Chien-Fu Shen ,  De-Shan Kuo ,  Cheng-Ta Kuo

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L33/46 ,  H01L33/22

摘要： A light-emitting diode (LED) device and manufacturing methods thereof are disclosed, wherein the LED device comprises a substrate, a plurality of micro-lens, a reflector, a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a first electrode and a second electrode. The substrate has a plurality of micro-lens on its upper surface. The first conductivity type semiconductor layer is on the upper surface of the substrate. The active layer and the second conductivity type semiconductor layer are sequentially on a portion of the first conductivity type semiconductor layer. The first electrode is on the other portion of the first conductivity type semiconductor layer uncovered by the active layer. The second electrode is on the second conductivity type semiconductor layer. The reflector layer is on a lower surface of the substrate.

摘要翻译： 公开了一种发光二极管（LED）器件及其制造方法，其中LED器件包括衬底，多个微透镜，反射器，第一导电类型半导体层，有源层，第二导电类型半导体 层，第一电极和第二电极。 基板在其上表面上具有多个微透镜。 第一导电型半导体层位于基板的上表面上。 有源层和第二导电类型半导体层依次位于第一导电类型半导体层的一部分上。 第一电极位于由有源层未覆盖的第一导电类型半导体层的另一部分上。 第二电极在第二导电类型半导体层上。 反射层位于基板的下表面上。

公开(公告)号：US08823039B2

公开(公告)日：2014-09-02

申请号：US13459342

申请日：2012-04-30

申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.

摘要翻译： 本公开公开了一种发光装置。 发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上​​表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。 第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

公开(公告)号：US20120211794A1

公开(公告)日：2012-08-23

申请号：US13459342

申请日：2012-04-30

申请人： Chien-Fu SHEN ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu SHEN ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a light-emitting stack having an upper surface and a lower surface; a pad, arranged on the upper surface, comprising: a first bonding region; and a second bonding region physically connected to the first bonding region through a connecting region having a connecting width; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; and a third electrode extending from the pad and arranged between the first electrode and the second electrode. At least one of the first electrode, the second electrode, and the third electrode has a width smaller than the connecting width.

摘要翻译： 本公开公开了一种发光装置。 发光装置包括：具有上表面和下表面的发光叠层; 布置在所述上​​表面上的垫，包括：第一接合区域; 以及通过具有连接宽度的连接区域物理地连接到所述第一接合区域的第二接合区域; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 以及从所述焊盘延伸并且布置在所述第一电极和所述第二电极之间的第三电极。 第一电极，第二电极和第三电极中的至少一个具有小于连接宽度的宽度。

公开(公告)号：US20090140280A1

公开(公告)日：2009-06-04

申请号：US12292593

申请日：2008-11-21

申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104 μm and 6.2×104 μm.

摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一垫和第二垫中的至少一个的面积在1.5×10 4 mum到6.2×10 4 m之间。

公开(公告)号：US08188505B2

公开(公告)日：2012-05-29

申请号：US12292593

申请日：2008-11-21

申请人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

发明人： Chien-Fu Shen ,  Cheng-Ta Kuo ,  Wei-Shou Chen ,  Tsung-Hsien Liu ,  Yi-Wen Ku ,  Min-Hsun Hsieh

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L24/02 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprises a substrate, an epitaxial structure formed on the substrate including a first semiconductor layer, a second semiconductor layer, and a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer. A trench is formed in the epitaxial structure to expose a part of side surface of the epitaxial structure and a part of surface of the first semiconductor layer, so that a first conductive structure is formed on the part of surface of the first semiconductor layer in the trench, and a second conductive structure is formed on the second semiconductor layer. The first conductive structure includes a first electrode and a first pad electrically contacted with each other. The second conductive structure includes a second electrode and a second pad electrically contacted with each other. Furthermore, the area of at least one of the first pad and the second pad is between 1.5×104μm2 and 6.2×104 μm2.

摘要翻译： 发光器件包括衬底，形成在衬底上的外延结构，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的发光层。 在外延结构中形成沟槽以暴露外延结构的侧面的一部分和第一半导体层的表面的一部分，使得第一导电结构形成在第一半导体层的表面的一部分中 沟槽，并且在第二半导体层上形成第二导电结构。 第一导电结构包括彼此电接触的第一电极和第一焊盘。 第二导电结构包括彼此电接触的第二电极和第二焊盘。 此外，第一焊盘和第二焊盘中的至少一个的面积在1.5×104μm2和​​6.2×104μm2之间。

公开(公告)号：US08278681B2

公开(公告)日：2012-10-02

申请号：US12469669

申请日：2009-05-20

申请人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

发明人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L24/26 ,  H01L24/93 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00

摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

摘要翻译： 提供了发光二极管的晶片级封装工艺。 首先，在生长基板上形成半导体堆叠层。 然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。 然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。 此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。 然后将半导体堆叠层与生长衬底分离。 接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。 接下来，每个半导体堆叠图案电连接到导电插头。

公开(公告)号：US20120164768A1

公开(公告)日：2012-06-28

申请号：US13403714

申请日：2012-02-23

申请人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

发明人： Chia-En Lee ,  Cheng-Ta Kuo ,  Der-Ling Hsia

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L24/26 ,  H01L24/93 ,  H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/00

摘要： A wafer-level packaging process of a light-emitting diode is provided. First, a semiconductor stacked layer is formed on a growth substrate. A plurality of barrier patterns and a plurality of reflective layers are then formed on the semiconductor stacked layer, wherein each reflective layer is surrounded by one of the barrier patterns. A first bonding layer is then formed on the semiconductor stacked layer to cover the barrier patterns and the reflective layers. Thereafter, a carrying substrate having a plurality of second bonding layers and a plurality of conductive plugs electrically insulated from each other is provided, and the first bonding layer is bonded with the second bonding layer. The semiconductor stacked layer is then separated from the growth substrate. Next, the semiconductor stacked layer is patterned to form a plurality of semiconductor stacked patterns. Next, each semiconductor stacked pattern is electrically connected to the conductive plug.

摘要翻译： 提供了发光二极管的晶片级封装工艺。 首先，在生长基板上形成半导体堆叠层。 然后在半导体堆叠层上形成多个阻挡图案和多个反射层，其中每个反射层被一个屏障图案包围。 然后在半导体堆叠层上形成第一结合层以覆盖阻挡图案和反射层。 此后，设置具有多个第二接合层和彼此电绝缘的多个导电插塞的承载基板，并且第一接合层与第二接合层接合。 然后将半导体堆叠层与生长衬底分离。 接下来，对半导体堆叠层进行图案化以形成多个半导体堆叠图案。 接下来，每个半导体堆叠图案电连接到导电插头。

公开(公告)号：US07935981B2

公开(公告)日：2011-05-03

申请号：US12497703

申请日：2009-07-06

申请人： Yu-Chun Lee ,  Ya-Hsien Chang ,  Cheng-Ta Kuo

发明人： Yu-Chun Lee ,  Ya-Hsien Chang ,  Cheng-Ta Kuo

IPC分类号： H01L33/00

CPC分类号： H01L33/501 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A light emitting diode (LED) package includes a carrier, an LED chip, an encapsulant, a plurality of phosphor particles, and a plurality of anti-humidity particles. The LED chip is disposed on and electrically connected to the carrier. The encapsulant encapsulates the LED chip. The phosphor particles and the anti-humidity particles are distributed within the encapsulant. A first light emitted from the LED chip excites the phosphor particles to emit a second light. Some of the anti-humidity particles are adhered onto a surface of the phosphor particles, while the other anti-humidity particles are not adhered onto the surface of the phosphor particles. The anti-humidity particles absorb H2O so as to avoid H2O from being reacted with the phosphor particles. The LED package of the present application has favorable water resistance.

摘要翻译： 发光二极管（LED）封装包括载体，LED芯片，密封剂，多个荧光体颗粒和多个抗湿颗粒。 LED芯片设置在载体上并与其电连接。 密封剂封装了LED芯片。 荧光体颗粒和抗湿颗粒分布在密封剂内。 从LED芯片发射的第一个光线使荧光体颗粒发射第二个光。 一些抗湿颗粒附着在荧光体颗粒的表面上，而其它的防湿颗粒不附着在荧光体颗粒的表面上。 抗湿颗粒吸收H2O，以避免H2O与荧光体颗粒反应。 本申请的LED封装具有良好的耐水性。

公开(公告)号：US07902562B2

公开(公告)日：2011-03-08

申请号：US12222814

申请日：2008-08-18

申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

IPC分类号： H01L33/32

CPC分类号： H01L33/14

摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

公开(公告)号：US09231158B2

公开(公告)日：2016-01-05

申请号：US13221908

申请日：2011-08-31

申请人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

发明人： Cheng-Ta Kuo ,  Kuo-Hui Yu ,  Chao-Hsing Chen ,  Tsun-Kai Ko ,  Chi-Ming Huang ,  Shih-Wei Yen ,  Chien-Kai Chung

IPC分类号： H01L21/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L2933/0016

摘要： A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

摘要翻译： 公开了一种用于促进LED芯片的识别率的发光二极管（LED）结构和LED结构的制造方法，其中使第一导电类型的第一电极焊盘下方的表面的粗糙程度类似于 的第二导电类型的第二电极焊盘的表面，使得从第一电极焊盘示出的光泽可以类似于来自第二电极焊盘的光泽，从而解决由不同光泽引起的引线接合机的不良识别问题 从第一和第二电极焊盘。