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31.发明申请Threshold and flatband voltage stabilization layer for field effect transistors with high permittivity gate oxides 审中-公开具有高介电常数栅氧化物的场效应晶体管的阈值和平带电压稳定层公开(公告)号：US20050258491A1
公开(公告)日：2005-11-24
申请号：US10845719
申请日：2004-05-14
申请人： Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
发明人： Nestor Bojarczuk , Eduard Cartier , Martin Frank , Evgeni Gousev , Supratik Guha , Vijay Narayanan
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/49 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/786 , H01L51/00 , H01L51/05
CPC分类号： H01L21/28202 , H01L21/28194 , H01L21/823857 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518
摘要： An insulating interlayer for use in complementary metal oxide semiconductor (CMOS) that prevents unwanted shifts in threshold voltage and flatband voltage is provided. The insulating interlayer is located between a gate dielectric having a dielectric constant of greater than 4.0 and a Si-containing gate conductor. The insulating interlayer of the present invention is any metal nitride, that optionally may include oxygen, that is capable of stabilizing the threshold and flatband voltages. In a preferred embodiment, the insulating interlayer is aluminum nitride or aluminum oxynitride and the gate dielectric is hafnium oxide, hafnium silicate or hafnium silicon oxynitride. The present invention is particularly useful in stabilizing the threshold and flatband voltage of p-type field effect transistors.
摘要翻译： 提供了用于防止阈值电压和平带电压的不期望的偏移的互补金属氧化物半导体（CMOS）中的绝缘夹层。 绝缘中间层位于介电常数大于4.0的栅极电介质和含Si的栅极导体之间。 本发明的绝缘中间层是能够稳定阈值和平带电压的任何金属氮化物，其可任选地包括氧。 在优选实施例中，绝缘中间层为氮化铝或氮氧化铝，栅极电介质为氧化铪，硅酸铪或铪硅氮氧化物。 本发明在稳定p型场效应晶体管的阈值和平带电压方面特别有用。
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公开(公告)号：US08410690B2
公开(公告)日：2013-04-02
申请号：US12371302
申请日：2009-02-13
IPC分类号： B01J20/00
CPC分类号： B01J20/2808 , B01D53/261 , B01D53/28 , B01D2253/108 , B01J20/18 , B01J20/183 , B01J20/2803 , B01J2220/42 , B81B2201/047 , B81C1/00285 , B81C2201/112 , H01L23/26 , H01L51/5259 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/1433 , Y10T156/10 , H01L2924/00
摘要： Systems and methods for providing MEMS devices with integrated desiccant are provided. In one embodiment, a dry composition comprising desiccant is impact sprayed onto the backplate or substrate of a MEMS device, and becomes fused with the substrate. In another embodiment, the desiccant is impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet another embodiment, the impact-sprayed surface is impregnated with the desiccant. In still another embodiment, the desiccant is combined with a suitable inorganic binder, then impact sprayed such that the desiccant adheres to the impact sprayed surface. In yet a further embodiment, the desiccant is micronized or pulverized into a powder of desired particle size, and then impact sprayed onto a surface. Thus, the desiccant particles or powder are fused onto the target surface through the impact spraying process.
摘要翻译： 提供了提供MEMS器件集成干燥剂的系统和方法。 在一个实施方案中，将包含干燥剂的干组合物冲击喷射到MEMS装置的背板或基板上，并与基底熔合。 在另一个实施方案中，干燥剂被冲击喷雾，使得干燥剂粘附到冲击喷涂表面上。 在另一个实施例中，冲击喷射表面用干燥剂浸渍。 在另一个实施方案中，将干燥剂与合适的无机粘合剂组合，然后冲洗喷雾，使得干燥剂粘附到冲击喷涂表面。 在又一个实施方案中，干燥剂被微粉化或粉碎成所需粒度的粉末，然后冲击喷涂到表面上。 因此，干燥剂颗粒或粉末通过冲击喷涂工艺熔合到目标表面上。
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公开(公告)号：US08218228B2
公开(公告)日：2012-07-10
申请号：US12642421
申请日：2009-12-18
IPC分类号： G02B26/00
CPC分类号： H01G5/16 , G02B26/001
摘要： A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or “pull in” voltages in parallel.
摘要翻译： 描述了通过并联具有不同驱动或“拉入”电压的多个MEMS器件构成的两端可变电容器件。
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公开(公告)号：US20110149374A1
公开(公告)日：2011-06-23
申请号：US12642421
申请日：2009-12-18
CPC分类号： H01G5/16 , G02B26/001
摘要： A two-terminal, variable capacitance device is described that is constructed by connecting multiple MEMS devices having different actuation or “pull in” voltages in parallel.
摘要翻译： 描述了通过并联具有不同驱动或“拉入”电压的多个MEMS器件构成的两端可变电容器件。
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35.发明申请Selective etching of MEMS using gaseous halides and reactive co-etchants 失效使用气态卤化物和反应性辅助蚀刻剂选择性蚀刻MEMS公开(公告)号：US20080032439A1
公开(公告)日：2008-02-07
申请号：US11497726
申请日：2006-08-02
申请人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
发明人： Xiaoming Yan , Brian Arbuckle , Evgeni Gousev , Ming-Hau Tung
IPC分类号： H01L21/00
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00595 , B81C2201/0132
摘要： A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved selectivities of from at least about 2-times to at least about 100-times compared with a similar etching process not using a co-etchant. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant. Embodiments of the method are particularly useful in the manufacture of MEMS devices, for example, interferometric modulators. In some embodiments, the target material comprises a metal etchable by the vapor phase etchant, for example, molybdenum and the structural material comprises a dielectric, for example silicon dioxide.
摘要翻译： 在具有改进的选择性的结构材料存在下蚀刻靶材料的方法使用气相蚀刻剂和共蚀刻剂。 与不使用共蚀刻剂的类似蚀刻工艺相比，该方法的实施例表现出从至少约2倍至至少约100倍的改进的选择性。 在一些实施例中，靶材料包括可由气相蚀刻剂蚀刻的金属。 该方法的实施例在MEMS器件（例如干涉式调制器）的制造中特别有用。 在一些实施例中，靶材料包括可由气相蚀刻剂（例如，钼）蚀刻的金属，并且结构材料包括电介质，例如二氧化硅。
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公开(公告)号：US20070258123A1
公开(公告)日：2007-11-08
申请号：US11416920
申请日：2006-05-03
申请人： Gang Xu , Evgeni Gousev
发明人： Gang Xu , Evgeni Gousev
CPC分类号： G02B26/001 , B81B2201/047 , B81C1/00246
摘要： A microelectromechanical (MEMS) device is presented which comprises a metallized semiconductor. The metallized semiconductor can be used for conductor applications because of its low resistivity, and for transistor applications because of its semiconductor properties. In addition, the metallized semiconductor can be tuned to have optical properties which allow it to be useful for optical MEMS devices.
摘要翻译： 提出了一种包括金属化半导体的微机电（MEMS）器件。 金属化半导体由于其低电阻率而可用于导体应用，并且由于其半导体性质而可用于晶体管应用。 此外，金属化半导体可以被调谐以具有允许其对于光学MEMS器件有用的光学性质。
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公开(公告)号：US20070236774A1
公开(公告)日：2007-10-11
申请号：US11401023
申请日：2006-04-10
申请人： Evgeni Gousev , Gang Xu , Marek Mienko
发明人： Evgeni Gousev , Gang Xu , Marek Mienko
IPC分类号： G02B26/00
CPC分类号： G02B26/001 , Y10T29/49124
摘要： Broad band white color can be achieved in MEMS display devices by incorporating a material having an extinction coefficient (k) below a threshold value for wavelength of light within an operative optical range of the interferometric modulator. One embodiment provides a method of making the MEMS display device comprising depositing said material over at least a portion of a transparent substrate, depositing a dielectric layer over the layer of material, forming a sacrificial layer over the dielectric, depositing an electrically conductive layer on the sacrificial layer, and forming a cavity by removing at least a portion of the sacrificial layer. The suitable material may comprise germanium, germanium alloy of various compositions, doped germanium or doped germanium-containing alloys, and may be deposited over the transparent substrate, incorporated within the transparent substrate or the dielectric layer.
摘要翻译： 通过在干涉式调制器的可操作光学范围内并入具有低于阈值的消光系数（k）的材料，可以在MEMS显示装置中实现宽带白色。 一个实施例提供了一种制造MEMS显示装置的方法，包括在透明基板的至少一部分上沉积所述材料，在所述材料层上沉积介电层，在所述电介质层上形成牺牲层，在所述电介质层上沉积导电层 牺牲层，并且通过去除牺牲层的至少一部分来形成空腔。 合适的材料可以包括各种组成的锗，锗合金，掺杂的锗或掺杂的含锗合金，并且可以沉积在透明衬底上，并入透明衬底或电介质层中。
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38.发明授权Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier 有权具有高介电常数栅极电介质和集成扩散势垒的互补金属氧化物半导体（CMOS）栅极叠层公开(公告)号：US06891231B2
公开(公告)日：2005-05-10
申请号：US09879105
申请日：2001-06-13
申请人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
发明人： Nestor Alexander Bojarczuk, Jr. , Kevin Kok Chan , Christopher Peter D'Emic , Evgeni Gousev , Supratik Guha , Paul C. Jamison , Lars-Ake Ragnarsson
IPC分类号： H01L21/8238 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/513 , H01L21/28194
摘要： A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.
摘要翻译： 用于具有沟道区和栅电极的场效应晶体管的扩散势垒（和形成扩散势垒的方法）包括设置在沟道区上的绝缘材料。 绝缘材料包括氮（N），并且设置在栅电极下方。 绝缘材料可以设置为层或分布在设置在栅电极下方的栅极电介质材料内。
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公开(公告)号：US08536059B2
公开(公告)日：2013-09-17
申请号：US12527864
申请日：2008-02-18
申请人： Khurshid Syed Alam , Evgeni Gousev , Marc Maurice Mignard , David Heald , Ana R. Londergan , Philip Don Floyd
发明人： Khurshid Syed Alam , Evgeni Gousev , Marc Maurice Mignard , David Heald , Ana R. Londergan , Philip Don Floyd
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67069 , B81B2201/047 , B81C1/00531
摘要： Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.
摘要翻译： 本文公开了蚀刻设备和方法，用于从永久MEMS结构之间更有效地蚀刻牺牲材料。 蚀刻头包括细长的蚀刻剂入口结构，其可以是槽形的或入口孔的细长分布。 衬底以限定基本上平行于衬底面的流动路径的方式支撑在蚀刻头附近，并且允许蚀刻头相对于衬底扫描的相对运动。
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公开(公告)号：US20130003158A1
公开(公告)日：2013-01-03
申请号：US13171245
申请日：2011-06-28
CPC分类号： G02B26/001 , Y10T29/49826
摘要： This disclosure provides apparatus, systems and methods for optical decoupling. In one implementation, an optical system includes a substrate transmissive to visible light, a first antireflective structure disposed on a surface of the substrate, a second antireflective structure. The first and second antireflective structures define at least one cavity containing air in between. The optical system further includes a plurality of support posts configured to space the first antireflective structure from the second antireflective structure to define the height of the at least one cavity. A reflective display is disposed on a surface of the second antireflective structure opposite the at least one cavity.
摘要翻译： 本公开提供了用于光学去耦的装置，系统和方法。 在一个实施方案中，光学系统包括透射可见光的衬底，设置在衬底的表面上的第一抗反射结构，第二抗反射结构。 第一和第二抗反射结构限定了至少一个容纳空气的空腔。 光学系统还包括多个支撑柱，其被配置为将第一抗反射结构与第二抗反射结构间隔开以限定至少一个腔的高度。 反射显示器设置在与至少一个空腔相对的第二抗反射结构的表面上。
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