公开(公告)号：US4242600A

公开(公告)日：1980-12-30

申请号：US897939

申请日：1978-04-19

申请人： Kurt Hoffmann ,  Manfred Mauthe

发明人： Kurt Hoffmann ,  Manfred Mauthe

IPC分类号： G11C27/04 ,  G11C19/28 ,  H01L29/768 ,  H03H11/26 ,  H01L29/78

CPC分类号： H01L29/76816 ,  G11C19/285 ,  H01L29/76825

摘要： A digital CCD arrangement is provided in which an output signal is emitted which is regenerated with respect to its voltage range, and is substantially insensitive to adverse influences. In this arrangement, the last shift electrode preceding the output end zone is coupled with respect to potential to a circuit point of a transistor stage, which point in the event of a quantity of charge carriers representing logic level "1," the output end zone experiences a change in potential which corresponds to the change in potential beneath the other shift electrodes. Between the last preceding shift electrode and the output end zone, there is arranged a further electrode which is insulated from the semiconductor layer and is connected to a second reference potential which corresponds to an intermediate value which is swept over by the potential across the circuit point.

摘要翻译： 提供了一种数字CCD装置，其中发射输出信号，其相对于其电压范围再生，并且对不利影响基本上不敏感。 在这种布置中，输出端区之前的最后一个移位电极相对于晶体管级的电路点的电位而耦合，这表示在表示逻辑电平“1”的电荷载流量的情况下，输出端区 经历与其他换挡电极下方的电位变化相对应的电位变化。 在最后的前一移位电极和输出端区之间，布置另外的电极，该电极与半导体层绝缘并且连接到第二参考电位，该第二参考电位对应于跨越电路点的电势扫过的中间值 。

公开(公告)号：US4194283A

公开(公告)日：1980-03-25

申请号：US934263

申请日：1978-08-16

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L29/08 ,  H01L29/423 ,  H01L21/22

CPC分类号： H01L29/0847 ,  H01L23/522 ,  H01L27/10823 ,  H01L29/4236 ,  H01L2924/0002 ,  Y10S438/901

摘要： In the production of V-MOS single transistor memory cells a simplification of the previous technology is disclosed wherein a process is utilized without epitaxial processes and with a minimum of doping processes. First the source and the drain zone of a field effect transistor forming a memory cell are produced and only then is a V-shaped recess formed at the site of these zones. In one embodiment, one re-doped zone is constructed as a flat zone and is produced on both sides adjacent to a second re-doped zone extending deeper into the silicon crystal. The V-shaped recess is then etched in such a way that the two zones are completely separated by the V-shaped recess. The silicon surface in the V-shaped recess is provided with a thin SiO.sub.2 layer and with a gate electrode covering it. Advantageously the gate electrodes of neighboring V-MOS cells are united into a line. This occurs with one of the two zones of the transistor, whereas the other zone remains separate.

摘要翻译： 在生产V-MOS单晶体管存储器单元中，公开了先前技术的简化，其中使用无外延工艺和最少掺杂工艺的工艺。 首先，形成形成存储单元的场效应晶体管的源极和漏极区域，然后仅形成在这些区域的位置处的V形凹部。 在一个实施例中，一个再掺杂区域被构造为平坦区域，并且在邻近于深入硅晶体的第二再掺杂区域的两侧上产生。 然后以这样的方式蚀刻V形凹部，使得两个区域被V形凹部完全分离。 V形凹部中的硅表面设置有薄SiO 2层，并且覆盖其上的栅极电极。 有利的是，相邻V-MOS电池的栅电极被联合成一行。 这发生在晶体管的两个区域之一，而另一个区域保持分离。

公开(公告)号：US4075515A

公开(公告)日：1978-02-21

申请号：US717690

申请日：1976-08-25

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  G11C27/04 ,  H01L29/768 ,  H03F3/00 ,  H03H7/30 ,  H03H11/26 ,  H03K5/18 ,  H01L29/78 ,  H03K5/02

CPC分类号： H01L29/76825 ,  G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  G11C27/04 ,  H03F3/005 ,  H03H7/30

摘要： Digital differential amplifier with pre-chargeable parasitic capacitances to switch on or hold blocked output transistors discharging or not discharging an output capacitance via a constant current sink for a combination of two charge coupled devices. The digital differential amplifier detects the presence or absence of charge on the output of a first charge coupled device and inputs a corresponding charge to a second charge coupled device. The combination of the two charge coupled devices with two digital differential amplifiers and two control transistors is such that stored charges may be recirculated between the two charge coupled devices or previously stored data may be serially read from the output of one charge coupled device and new data may be serially written into the input of the other charge coupled device. A method of recirculating previously stored data or writing new data into the second charge coupled device using precharged parasitic and diffusion zone capacitances is also described.

公开(公告)号：US20100315635A1

公开(公告)日：2010-12-16

申请号：US12667601

申请日：2008-07-04

申请人： Christoph Janzen ,  Reinhard Noll ,  Walter Uhl ,  Kurt Hoffmann

发明人： Christoph Janzen ,  Reinhard Noll ,  Walter Uhl ,  Kurt Hoffmann

IPC分类号： G01J3/28 ,  G01N21/47

CPC分类号： G01N21/474 ,  G01N2021/4759 ,  G02B21/02 ,  G02B21/06

摘要： The invention relates to a device for measuring scattered light, comprising at least one focusing element provided with electromagnetic radiation that can be focused on a sample, a detector and a detector optical system with which electromagnetic radiation scattered by the sample can be conducted to the detector. The device is characterized in that it comprises means for forming an annular beam such that said annular beam can be focused on a focus point inside the sample by the at least one focusing element and that electromagnetic radiation scattered by the sample can be detected by the detection optical system, said electromagnetic radiation dispersing inside the area surrounded by the annular beam.

摘要翻译： 本发明涉及一种用于测量散射光的装置，包括至少一个聚焦元件，该聚焦元件设置有可聚焦在样品上的电磁辐射，检测器和检测器光学系统，利用该光学系统可以将样品散射的电磁辐射传导到检测器 。 该装置的特征在于，它包括用于形成环形梁的装置，使得所述环形束可以通过至少一个聚焦元件聚焦在样品内的焦点上，并且可以通过检测来检测由样品散射的电磁辐射 光学系统，所述电磁辐射分散在由环形光束包围的区域内。

公开(公告)号：US07746683B2

公开(公告)日：2010-06-29

申请号：US11737236

申请日：2007-04-19

申请人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

发明人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0019 ,  G11C2213/15 ,  G11C2213/75 ,  G11C2213/79

摘要： A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

摘要翻译： 存储器装置包括：用于施加参考电压的第一线，用于施加工作电压的第二线和多个电阻性存储器元件，每个元件包括电阻存储器单元和MOS存储单元选择晶体管。 NOR存储器配置配置有每个存储器元件，其包括与连接到第一线路的晶体管串联连接的电阻存储器单元和选择晶体管，以及连接到第二线路的存储器单元。 NAND存储器配置配置有一系列形成链的电阻存储元件，每个存储元件包括并联连接的电阻存储单元和选择晶体管。 链条连接到布置在面向选择晶体管的存储单元的一侧上的第一行，而第二行设置在远离选择晶体管的存储单元的一侧。

公开(公告)号：US20080159932A1

公开(公告)日：2008-07-03

申请号：US12074741

申请日：2008-03-06

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： B01D9/00

CPC分类号： C30B7/00 ,  C30B29/58

摘要： A method for the crystallization of macromolecules in a three-phase system using a vessel containing a lower aqueous phase, a middle phase and an upper hydrophobic phase having a lower density than that of the lower aqueous phase, wherein an aqueous solution of the macromolecules is added to the middle phase to form a fourth phase, followed by incubation.

摘要翻译： 一种使用含有下水相，中相和上疏水相的容器在三相体系中结晶大分子的方法，所述容器的密度低于下水相的密度，其中大分子的水溶液为 加入中期形成第四期，随后孵育。

公开(公告)号：US06610765B1

公开(公告)日：2003-08-26

申请号：US09869930

申请日：2001-07-09

申请人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Felix Meyer ,  Bruno Rotzinger

发明人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Felix Meyer ,  Bruno Rotzinger

IPC分类号： C08K534

CPC分类号： C08L23/04 ,  C08L33/00 ,  C08L83/04 ,  C08L101/00 ,  C08L2666/04 ,  C08L83/00

摘要： The dispersion of additives selected from the group consisting of stabilizers, antistatic agents, nucleating agents, biocides and/or flame retardants in synthetic polymers is improved by the addition of at least one polymeric dispersing or solvating agent having amphiphilic properties. Synthetic polymers stabilized in this manner are distinguished by having excellent stability against oxidative, thermal or light-induced degradation.

摘要翻译： 通过添加至少一种具有两亲性质的聚合物分散剂或溶剂化剂，可以改善在合成聚合物中选自稳定剂，抗静电剂，成核剂，杀生物剂和/或阻燃剂的添加剂的分散体。 以这种方式稳定的合成聚合物的特征在于对氧化，热或光诱导的降解具有优异的稳定性。

公开(公告)号：US06452830B2

公开(公告)日：2002-09-17

申请号：US09767805

申请日：2001-01-22

申请人： Oskar Kowarik ,  Kurt Hoffmann

发明人： Oskar Kowarik ,  Kurt Hoffmann

IPC分类号： G11C1122

CPC分类号： G11C11/22

摘要： A memory configuration includes a plurality of resistive ferroelectric memory cells. Each of the memory cells includes a selection transistor and a storage capacitor. The selection transistor has a given zone of a first conductivity type. The storage capacitor has a first and a second electrode. The first electrode is supplied with a fixed cell plate voltage, the second electrode is connected to the given zone of the first conductivity type. A source and a drain of a MOS transistor are supplied with the fixed cell plate voltage. The channel of the MOS transistor has a channel length extending over at least two of the memory cells. The given zone of the first conductivity type is connected, via a resistor, to the channel of the MOS transistor such that the given zone is electrically connected to the first electrode of the storage capacitor via the resistor and the MOS transistor.

摘要翻译： 存储器配置包括多个电阻式铁电存储单元。 每个存储单元包括选择晶体管和存储电容器。 选择晶体管具有第一导电类型的给定区域。 存储电容器具有第一和第二电极。 第一电极被提供有固定电池板电压，第二电极连接到第一导电类型的给定区域。 MOS晶体管的源极和漏极被提供有固定电池板电压。 MOS晶体管的沟道具有在至少两个存储单元上延伸的沟道长度。 第一导电类型的给定区域经由电阻器连接到MOS晶体管的沟道，使得给定区域经由电阻器和MOS晶体管电连接到存储电容器的第一电极。

公开(公告)号：US6133414A

公开(公告)日：2000-10-17

申请号：US202357

申请日：1998-12-14

申请人： Rudolf Pfaendner ,  Heinz Herbst ,  Kurt Hoffmann ,  Raymond Seltzer ,  Matthew Edward Gande

发明人： Rudolf Pfaendner ,  Heinz Herbst ,  Kurt Hoffmann ,  Raymond Seltzer ,  Matthew Edward Gande

IPC分类号： C08F8/50 ,  C08J11/28 ,  C08J11/10 ,  C08J11/22

CPC分类号： C08J11/28 ,  C08F8/50 ,  C08F2810/10 ,  Y02W30/706

摘要： A method is described for the decomposition of polymers, especially waste plastics and used plastics, in which so-called NOR--HALS compounds--that is, for example, compounds comprising the group ##STR1## in which R* is C.sub.1 -C.sub.20 alkyl, OH-substituted C.sub.1 -C.sub.20 alkyl, optionally C.sub.1 -C.sub.4 alkyl-substituted C.sub.5 -C.sub.12 cycloalkyl or O- or S-interrupted C.sub.2 -C.sub.20 alkyl--are added and heating is carried out at temperatures which lie above the customary processing temperatures for polymers (280.degree. C. or more).

摘要翻译： PCT No.PCT / EP97 / 03133 Sec。 371 1998年12月14日第 102（e）1998年12月14日PCT PCT 1997年6月17日PCT公布。 出版物WO97 / 49737 日期1997年12月31日描述了用于分解聚合物，特别是废塑料和废塑料的方法，其中所谓的NOR-HALS化合物 - 例如包括其中R *是C 1 -C 20烷基的基团的化合物 ，OH取代的C 1 -C 20烷基，任选地C 1 -C 4烷基取代的C 5 -C 12环烷基或O-或S-间断的C 2 -C 20烷基 - 并且在高于常规加工温度的聚合物的温度下进行加热（280℃ 。 或者更多）。

公开(公告)号：US6028129A

公开(公告)日：2000-02-22

申请号：US234254

申请日：1999-01-20

申请人： Rudolf Pfaendner ,  Alfred Steinmann ,  Heinz Herbst ,  Kurt Hoffmann

发明人： Rudolf Pfaendner ,  Alfred Steinmann ,  Heinz Herbst ,  Kurt Hoffmann

IPC分类号： C08G69/48 ,  C08G59/22 ,  C08G59/26 ,  C08G63/91 ,  C08G64/42 ,  C08K5/3435 ,  C08L63/00 ,  C08L67/00 ,  C08L69/00 ,  C08L77/00 ,  C08K5/34 ,  C08K3/34 ,  C08K5/53

CPC分类号： C08L67/00 ,  C08G59/26 ,  C08K5/3435 ,  C08L63/00 ,  C08L69/00 ,  C08L77/00

摘要： The invention relates to a process for increasing the molecular weight of polycondensates and at the same time stabilizing them, essentially without crosslinking, which comprises heating a polyamide, a polyester, a polycarbonate or a copolymer or blend of these polymers with addition of at least one diepoxide comprising terminal epoxide groups and as a further structural element a tetramethylpiperidine radical located centrally between the epoxide groups to a temperature which is above the melting point of the polymer in the case of crystalline polycondensates or above the glass point in the case of amorphous polycondensates. The invention additionally relates to mixtures comprising the corresponding diepoxides, to their use, and to polycondensates prepared from them.

摘要翻译： 本发明涉及一种提高缩聚物分子量的方法，同时稳定它们，基本上不含交联，其包括加热这些聚合物的聚酰胺，聚酯，聚碳酸酯或共聚物或共混物，加入至少一种 二环氧化物包含末端环氧基团，并且作为另外的结构元素，位于环氧基团之间的中心的四甲基哌啶基团，在结晶缩聚物的情况下高于聚合物的熔点或在无定形缩聚物的情况下高于玻璃点的温度。 本发明还涉及包含相应的二环氧化物及其用途的混合物和由它们制备的缩聚物。