公开(公告)号：US07943987B2

公开(公告)日：2011-05-17

申请号：US11874591

申请日：2007-10-18

申请人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier ,  Frank Pfirsch

发明人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier ,  Frank Pfirsch

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7804

摘要： A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.

摘要翻译： 半导体部件具有漂移区和漂移控制区，漂移控制区电介质，其布置在漂移区和漂移控制区之间的部分中，并且具有第一和第二连接区，其相互掺杂互补 并且在漂移控制区域和漂移区段的一部分之间形成pn结。

公开(公告)号：US07436023B2

公开(公告)日：2008-10-14

申请号：US11464004

申请日：2006-08-11

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L23/58

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/8083 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).

摘要翻译： 具有形成在半导体本体（1）中的漂移路径（2）的半导体部件由第一导电型半导体材料构成。 漂移路径（2）布置在至少一个第一和第二电极（3,4）之间，并具有至少一个沟槽（18）形式的沟槽结构。 被称为高k材料并且具有相对介电常数εε的电介质材料，其中ε= r / O 2 = 20布置在沟槽结构中，使得在 第一电导型的至少一个高k材料区域（5）和一个半导体材料区域（6）被布置在漂移路径（2）的区域中。

公开(公告)号：US20070052058A1

公开(公告)日：2007-03-08

申请号：US11464004

申请日：2006-08-11

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L23/58 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/8083 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).

摘要翻译： 具有形成在半导体本体（1）中的漂移路径（2）的半导体部件由第一导电型半导体材料构成。 漂移路径（2）布置在至少一个第一和第二电极（3,4）之间，并具有至少一个沟槽（18）形式的沟槽结构。 被称为高k材料并且具有相对介电常数εε的电介质材料，其中ε= r / O 2 = 20布置在沟槽结构中，使得在 第一电导型的至少一个高k材料区域（5）和一个半导体材料区域（6）被布置在漂移路径（2）的区域中。

公开(公告)号：US08674727B2

公开(公告)日：2014-03-18

申请号：US12873146

申请日：2010-08-31

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

IPC分类号： H03K3/00

CPC分类号： H03K17/687 ,  H03K17/122 ,  H03K2017/6878

摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.

摘要翻译： 电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。 驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

公开(公告)号：US20120049898A1

公开(公告)日：2012-03-01

申请号：US12873146

申请日：2010-08-31

申请人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

发明人： Anton Mauder ,  Franz Hirler ,  Frank Pfirsch

IPC分类号： H03B1/00

CPC分类号： H03K17/687 ,  H03K17/122 ,  H03K2017/6878

摘要： A circuit arrangement includes a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal. A drive circuit is connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.

摘要翻译： 电路装置包括具有栅极端子的晶体管部件，控制端子以及源极和漏极端子之间的负载路径。 驱动电路连接到控制端子并且被配置为确定晶体管部件的负载状况，以向控制端子提供驱动电位，并根据负载条件来调节驱动电位。

公开(公告)号：US20120049273A1

公开(公告)日：2012-03-01

申请号：US12868918

申请日：2010-08-26

申请人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

发明人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

IPC分类号： H01L29/78 ,  H01L27/088

CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7803 ,  H01L29/7828

摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.

摘要翻译： 耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘 区域。 耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并电耦合到用于参考电位的端子。 耗尽晶体管可以包括在充电电路中。

公开(公告)号：US07973359B2

公开(公告)日：2011-07-05

申请号：US12194384

申请日：2008-08-19

申请人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

发明人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L24/05 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/42372 ,  H01L29/7811 ,  H01L2224/02166 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

摘要翻译： 具有电荷载体补偿结构的半导体器件。 在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。 至少一个键合接触区域电耦合到栅极结构或源极结构。 电容增大场板电耦合到近表面接合区域中的至少一个。

公开(公告)号：US20100044788A1

公开(公告)日：2010-02-25

申请号：US12194384

申请日：2008-08-19

申请人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

发明人： Franz Hirler ,  Armin Willmeroth ,  Anton Mauder ,  Gerald Deboy ,  Holger Kapels ,  Carolin Tolksdorf ,  Frank Pfirsch

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L24/05 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/42372 ,  H01L29/7811 ,  H01L2224/02166 ,  H01L2924/181 ,  H01L2924/00

摘要： A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.

摘要翻译： 具有电荷载体补偿结构的半导体器件。 在一个实施例中，半导体器件具有具有栅极和源极结构的中心电池区。 至少一个键合接触区域电耦合到栅极结构或源极结构。 电容增大场板电耦合到近表面接合区域中的至少一个。

公开(公告)号：US10566462B2

公开(公告)日：2020-02-18

申请号：US12512285

申请日：2009-07-30

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/861

摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

公开(公告)号：US08809971B2

公开(公告)日：2014-08-19

申请号：US12861153

申请日：2010-08-23

申请人： Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/51 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant ∈r with a negative temperature coefficient.

摘要翻译： 一种半导体元件，包括半导体本体，半导体主体中的沟道区，与沟道区相邻的沟道控制电极，以及沟道区和沟道控制电极之间的介电层，其中介电层具有相对介电常数ε r具有负温度系数。