公开(公告)号：US11746413B2

公开(公告)日：2023-09-05

申请号：US17829007

申请日：2022-05-31

Applicant: ENTEGRIS, INC.

Inventor： David James Eldridge ,  David Peters ,  Robert Wright, Jr. ,  Bryan C. Hendrix ,  Scott L. Battle ,  John Gregg

IPC: C23C16/40 ,  C23C16/448 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4487 ,  C23C16/45512 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02271 ,  H01L21/67017

Abstract: A chemical delivery system includes a bulk container, a run/refill chamber, a first conduit and a second conduit. The bulk container stores a precursor. The run/refill chamber includes a plurality of spaced tubes having a plurality of surfaces for receiving the precursor in vapor form and storing the precursor in solid form. The first conduit connects the bulk container to the run/refill chamber for transporting the precursor from the bulk container to the run/refill chamber in vapor form. The second conduit connects the run/refill chamber to a deposition chamber for transporting the precursor from the run/refill chamber to the deposition chamber in vapor form.

公开(公告)号：US20230062455A1

公开(公告)日：2023-03-02

申请号：US17900713

申请日：2022-08-31

Applicant: ENTEGRIS, INC.

Inventor： Benjamin Cardozo ,  Scott L. Battle

IPC: C23C16/48

Abstract: An assembly includes a vaporizer vessel. In some embodiments, the vaporizer vessel defines an interior volume. In some embodiments, the vaporizer vessel is configured to hold at least one source reagent within the interior volume. In some embodiments, the assembly includes a heater. In some embodiments, the heater is configured to vaporize the at least one source reagent. In some embodiments, the heater is a radiant heat source configured to vaporize the at least one source reagent without heating the vaporizer vessel.

公开(公告)号：US20170032973A1

公开(公告)日：2017-02-02

申请号：US15302741

申请日：2015-03-26

Applicant: ENTEGRIS, INC.

Inventor： Thomas H. Baum ,  Scott L. Battle ,  David W. Peters ,  Philip S.H. Chen

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/56 ,  H01L21/321 ,  C23C16/455 ,  C23C16/06

CPC classification number: H01L21/28562 ,  C07F15/06 ,  C23C16/06 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cobalt deposition process, including: volatilizing a cobalt precursor selected from among CCTBA, CCTMSA, and CCBTMSA, to form a precursor vapor; and contacting the precursor vapor with a substrate under vapor deposition conditions effective for depositing on the substrate (i) high purity, low resistivity cobalt or (ii) cobalt that is annealable by thermal annealing to form high purity, low resistivity cobalt. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms an electrode, capping layer, encapsulating layer, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel display, or solar panel.

Abstract translation: 钴沉积工艺，包括：挥发选自CCTBA，CCTMSA和CCBTMSA的钴前体，以形成前体蒸气; 以及在有效沉积在基底上的气相沉积条件（i）高温，低电阻率的钴或（ⅱ）可通过热退火退火以形成高纯度的低电阻率钴的钴的（ⅱ）钴的气相沉积条件下将前体蒸汽与基底接触。 这种钴沉积工艺可用于制造其中沉积的钴形成其上的金属的电极，封盖层，封装层，扩散层或晶种的产品，例如半导体器件，平板显示器或太阳能 面板。

公开(公告)号：US20150337436A1

公开(公告)日：2015-11-26

申请号：US14815805

申请日：2015-07-31

Applicant: Entegris, Inc.

Inventor： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi K. Laxman

IPC: C23C16/448

CPC classification number: C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

Abstract: Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

Abstract translation: 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的安瓿。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。