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87 条记录 (耗时 0.034 秒)

    Semiconductor device and manufacturing method thereof
    35.
    发明授权
    Semiconductor device and manufacturing method thereof 有权

    公开(公告)号：US08508027B2

    公开(公告)日：2013-08-13

    申请号：US12555832

    申请日：2009-09-09

    申请人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

    发明人： Hidekazu Takahashi ,  Daiki Yamada ,  Kyosuke Ito ,  Eiji Sugiyama ,  Yoshitaka Dozen

    IPC分类号： H01L23/552

    CPC分类号： H01L23/66 ,  H01L23/49855 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

    Semiconductor device and manufacturing method of semiconductor device
    36.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08432018B2

    公开(公告)日：2013-04-30

    申请号：US13271469

    申请日：2011-10-12

    申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

    IPC分类号： H01L29/06

    CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

    摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

    Semiconductor device and product tracing system utilizing the semiconductor device having top and bottom fibrous sealing layers
    37.
    发明授权
    Semiconductor device and product tracing system utilizing the semiconductor device having top and bottom fibrous sealing layers 有权
    利用具有顶部和底部纤维密封层的半导体器件的半导体器件和产品追踪系统

    公开(公告)号：US08338931B2

    公开(公告)日：2012-12-25

    申请号：US12767909

    申请日：2010-04-27

    申请人： Yoshitaka Dozen ,  Eiji Sugiyama ,  Hisashi Ohtani ,  Takuya Tsurume

    发明人： Yoshitaka Dozen ,  Eiji Sugiyama ,  Hisashi Ohtani ,  Takuya Tsurume

    IPC分类号： H01L23/02

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1255

    摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.

    摘要翻译： 在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。 该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。 该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

    Integrated circuit device and method for manufacturing integrated circuit device
    39.
    发明授权
    Integrated circuit device and method for manufacturing integrated circuit device 有权
    集成电路器件及集成电路器件制造方法

    公开(公告)号：US07816685B2

    公开(公告)日：2010-10-19

    申请号：US12342446

    申请日：2008-12-23

    申请人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

    发明人： Daiki Yamada ,  Yoshitaka Dozen ,  Eiji Sugiyama ,  Hidekazu Takahashi

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1266 ,  H01L27/124 ,  H01L27/1292 ,  H01L27/1296 ,  H01L29/78621 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81001 ,  H01L2924/00

    摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.

    摘要翻译： 本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。 包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体 电极。 导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。 用激光照射导电膜。