公开(公告)号：US20140291786A1

公开(公告)日：2014-10-02

申请号：US14233969

申请日：2012-07-20

申请人： Jochen Zoellin ,  Franz Laermer ,  Christoph Schelling ,  Mike Daley

发明人： Jochen Zoellin ,  Franz Laermer ,  Christoph Schelling ,  Mike Daley

IPC分类号： H04R7/06 ,  H04R19/00 ,  H04R19/04

CPC分类号： H04R7/06 ,  B81B3/0051 ,  B81B2201/0257 ,  H04R19/005 ,  H04R19/04 ,  H04R2201/003

摘要： Substrate-side overload protection for the diaphragm structure of a microphone component having a micromechanical microphone structure which impairs the damping properties of the microphone structure as little as possible, in which the microphone structure includes a diaphragm structure having at least one acoustically active diaphragm which is formed in a diaphragm layer above a semiconductor substrate. The diaphragm structure spans at least one sound opening in the rear side of the substrate. A stationary, acoustically permeable counter element is formed in the layer structure of the component above the diaphragm layer. According to the invention, at least projections are formed at the outer edge area of the diaphragm structure which protrude beyond the edge area of the sound opening, so that the edge area of the sound opening acts as a substrate-side stop for the diaphragm structure.

摘要翻译： 用于具有微机械麦克风结构的麦克风部件的隔膜结构的基板侧过载保护，其尽可能少地损害麦克风结构的阻尼特性，其中麦克风结构包括具有至少一个声学活动隔膜的隔膜结构， 形成在半导体衬底上的隔膜层中。 隔膜结构跨越基板后侧的至少一个声音开口。 在隔膜层上方的部件的层结构中形成固定的，声学可渗透的计数元件。 根据本发明，至少在隔膜结构的外边缘区域形成突起，突出超过声音开口的边缘区域，使得声音开口的边缘区域用作隔膜结构的基板侧挡块 。

公开(公告)号：US20110137254A1

公开(公告)日：2011-06-09

申请号：US12925804

申请日：2010-10-29

申请人： Dick Scholten ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh

发明人： Dick Scholten ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh

IPC分类号： A61M5/00 ,  B26F3/00

CPC分类号： A61M37/0015 ,  A61M2037/0053 ,  B81B2201/055 ,  B81B2203/0361 ,  B81C1/00111 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2203/0118 ,  B81C2203/054 ,  Y10T225/10 ,  Y10T225/12

摘要： A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips.

摘要翻译： 多孔微针阵列的制造方法包括：形成多个多孔微针阵列，每个多孔微针阵列在半导体衬底的表面上具有至少一个微针和位于其下方的多孔载体区; 在位于半导体衬底背面的半导体衬底的非多孔残留层与载体区之间形成中间层，所述载流区具有比载体区更大的孔隙率; 通过破坏夹层从载体区分离残留层; 并将微针阵列分离成相应的芯片。

公开(公告)号：US20090236610A1

公开(公告)日：2009-09-24

申请号：US12282842

申请日：2007-03-09

申请人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

发明人： Gerhard Lammel ,  Hubert Benzel ,  Matthias Illing ,  Franz Laermer ,  Silvia Kronmueller ,  Paul Farber ,  Simon Armbruster ,  Ralf Reichenbach ,  Christoph Schelling ,  Ando Feyh

IPC分类号： H01L29/24 ,  H01L21/04

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

摘要翻译： 提供了一种制造半导体结构的方法，其包括以下操作：提供晶体半导体衬底，提供与半导体衬底的表面相邻的多孔区域，从表面引入掺杂剂到多孔区域中，并将多孔 区域形成半导体衬底的掺杂类型和/或掺杂浓度和/或掺杂分布/不同于半导体衬底或/或掺杂分布的晶体掺杂区域。 同样提供相应的半导体结构。

公开(公告)号：US20090200262A1

公开(公告)日：2009-08-13

申请号：US12227509

申请日：2007-04-27

申请人： Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

发明人： Dick Scholten ,  Julia Cassemeyer ,  Michael Stumber ,  Franz Laermer ,  Ando Feyh ,  Christian Maeurer

IPC分类号： C23F1/00

CPC分类号： B81C1/00119 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0038 ,  A61M2037/0046 ,  A61M2037/0053 ,  B81C2201/0112 ,  B81C2201/0115

摘要： A method for producing porous microneedles (10) situated in an array on a silicon substrate includes: providing a silicon substrate, applying a first etching mask, patterning microneedles using a DRIE process (“deep reactive ion etching”), removing the first etching mask, at least partially porosifying the Si substrate, the porosification beginning on the front side of the Si substrate and a porous reservoir being formed.

摘要翻译： 一种位于硅衬底阵列上的多孔微针（10）的制造方法，包括：提供硅衬底，施加第一蚀刻掩模，使用DRIE工艺（“深反应离子蚀刻”）图案化微针，除去第一蚀刻掩模 至少部分地使Si衬底开孔，从Si衬底的正面开始的孔隙化和形成的多孔容器。

公开(公告)号：US20080093690A1

公开(公告)日：2008-04-24

申请号：US11974011

申请日：2007-10-10

申请人： Frank Reichenbach ,  Franz Laermer ,  Kersten Kehr ,  Axel Franke ,  Andreas Scheurle

发明人： Frank Reichenbach ,  Franz Laermer ,  Kersten Kehr ,  Axel Franke ,  Andreas Scheurle

IPC分类号： H01L29/84 ,  H01L21/302

CPC分类号： B81C1/00246 ,  B81B2201/0235 ,  B81C2203/0778

摘要： A micromechanical component and a method for manufacturing such a component, the component having a micromechanical structure and an integrated circuit, the micromechanical structure being monolithically integrated into the circuit, the circuit being provided in a circuit area of the substrate, and the micromechanical structure being provided in a sensor area of the substrate, the material of the substrate being provided in the area of a sacrificial layer as well as in the area of a function layer without a transition.

摘要翻译： 一种微机械部件和制造这种部件的方法，所述部件具有微机械结构和集成电路，所述微机械结构单片集成到所述电路中，所述电路设置在所述基板的电路区域中，所述微机械结构为 设置在衬底的传感器区域中，衬底的材料设置在牺牲层的区域中以及在没有转变的功能层的区域中。

公开(公告)号：US07361287B2

公开(公告)日：2008-04-22

申请号：US10473831

申请日：2002-06-28

申请人： Franz Laermer

发明人： Franz Laermer

IPC分类号： C23F1/00 ,  H01L21/00

CPC分类号： H01L21/3065 ,  H01J37/32137 ,  H01J2237/334 ,  H01L21/30655 ,  H01L21/32137

摘要： A method is proposed for etching structures into an etching body, in particular, recesses which are laterally precisely defined by an etching mask, into a silicon body, using a plasma. In the process, a high-frequency pulsed, low-frequency modulated high-frequency power is coupled at least intermittently into the etching body using a high-frequency a.c. voltage and, in addition, the intensity of the plasma is modulated as a function of time.

摘要翻译： 提出了一种使用等离子体将结构蚀刻到硅体中的蚀刻体，特别是蚀刻掩模横向精确地限定的凹陷的结构。 在此过程中，高频脉冲，低频调制高频功率至少间歇地耦合到蚀刻体中，使用高频直流电源。 电压，此外，等离子体的强度作为时间的函数被调制。

公开(公告)号：US07166536B1

公开(公告)日：2007-01-23

申请号：US09720761

申请日：2000-03-16

申请人： Franz Laermer ,  Andrea Schilp ,  Bernhard Elsner

发明人： Franz Laermer ,  Andrea Schilp ,  Bernhard Elsner

IPC分类号： H01L21/302

CPC分类号： H01L21/3065 ,  Y02C20/30 ,  Y02P70/605

摘要： A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF3, BrF3, or IF5 is added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NF3 is added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H2, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.

摘要翻译： 使用工艺气体的硅衬底中的横向限定结构的等离子体蚀刻（特别是各向异性等离子体蚀刻）的方法至少包括至少一次在横向限定的结构的侧壁上析出的钝化材料 在蚀刻之前和/或期间。 在示例性方法中，将至少一种选自ClF 3 3，BrF 3或IF 5的化合物加入到该方法 气体作为输送氧气的蚀刻气体。 在另一示例性方法中，至少不时地将NF 3 N作为消耗钝化材料的添加剂加入到工艺气体中。 最后，在另一示例性方法中，至少不时地向工艺气体添加轻质且易于电离的气体，特别是H 2，He或Ne。 可以组合三种示例性方法。

公开(公告)号：US07149070B2

公开(公告)日：2006-12-12

申请号：US10495648

申请日：2002-10-04

申请人： Klaus Breitschwerdt ,  Franz Laermer ,  Andrea Urban

发明人： Klaus Breitschwerdt ,  Franz Laermer ,  Andrea Urban

IPC分类号： H02H23/00

CPC分类号： H01L21/68785 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833

摘要： A holding device including a holding element, on which a substrate is electrostatically fixed, positioned on a substrate electrode. In one configuration, a load body on the substrate electrode presses the holding element onto it, and is connected via a clamping device, which presses the former onto the substrate electrode, with a base, which supports the substrate electrode, the load body and the base being electrically insulated from the substrate electrode. In another configuration, the side of the holding element faces the substrate as an electrically insulating ferroelectric or piezoelectric material. Another configuration includes a device via which a liquid convection medium is feedable into a space formed by the holding element and substrate or is removable from there again. A method for supplying heat or dissipating heat from the back of a substrate to which heat is applied from the front, and which is held by the holding device.

摘要翻译： 一种保持装置，其包括保持元件，基板静电固定在该保持元件上，位于基板电极上。 在一种构造中，基板电极上的负载体将保持元件按压在其上，并且通过将基板压在基板电极上的夹持装置连接，基座支撑基板电极，负载体和 基底与基底电极电绝缘。 在另一构造中，保持元件的侧面作为电绝缘铁电体或压电材料的基板。 另一种配置包括一种装置，通过该装置，液体对流介质可以被供给到由保持元件和基底形成的空间中，或者可以再次从该装置移除。 一种用于从基板背面向供热或散热的方法，该基板从前部施加热量，并由保持装置保持。

公开(公告)号：US20060068510A1

公开(公告)日：2006-03-30

申请号：US10520886

申请日：2003-05-06

申请人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt

发明人： Andrea Urban ,  Franz Laermer ,  Klaus Breitschwerdt

IPC分类号： H01L21/00

CPC分类号： B81C1/00571 ,  B81B2203/033 ,  B81C2201/016 ,  H01L21/0332

摘要： A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.

摘要翻译： 提供了一种用于制造层系统的层系统和方法，所述层系统具有硅层，其上至少区域地表面钝化钝化层，所述钝化层具有第一至少大部分无机部分层和第二层 ，至少主要是聚合物部分层。 该方法包括在硅层上制备第一无机部分层，并在该第一部分层上制备形成钝化层的第二聚合物部分层。 中间层的制造以与第一部分层相邻的表面区域的中间层构成为第一部分层的方式发生，并且与其邻接的第二部分层的表面区域中的中间层构成为第二部分层 部分层。 中间层的组成可以从对应于第一部分层的组合物连续地或逐步地转变成对应于第二部分层的组合物。

公开(公告)号：US06960536B2

公开(公告)日：2005-11-01

申请号：US10613459

申请日：2003-07-03

申请人： Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

发明人： Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

IPC分类号： B81C1/00 ,  C23F1/14 ,  H01L21/306 ,  H01L21/461

CPC分类号： B81C1/00571 ,  B81C1/00595 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/0735 ,  C23F1/14 ,  H01L21/30604

摘要： A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer. Further, a method is described for producing integrated microsystems having silicon-germanium functional layers, sacrificial layers containing germanium, and open metal surfaces. The sacrificial layers containing germanium are at least partially removed in an etching solution, a pH value of the etching solution being kept at least approximately neutral during the etching procedure using a buffer.

摘要翻译： 一种微系统的制造方法，其具有位于基板上的包括导电区域和子层的第一功能层。 位于第一功能层上的是第二机械功能层，其首先被初始施加到位于第一功能层上并构成的牺牲层上。 此外，层位于子层背离导电区域的一侧。 该层在第一功能层上构成保护层，其在牺牲层蚀刻工艺期间在区域中起作用，使得在去除牺牲层期间不会发生由保护层覆盖的第一功能层的区域的蚀刻， 在没有保护层的情况下实现的第一功能层的区域的区域在与牺牲层同时基本上选择性地去除导电区域。 此外，描述了一种用于制造具有硅 - 锗功能层，包含锗的牺牲层和开放金属表面的集成微系统的方法。 在蚀刻溶液中至少部分地除去含有锗的牺牲层，在使用缓冲液的蚀刻过程中，蚀刻溶液的pH值保持至少大致为中性。