公开(公告)号：US06454819B1

公开(公告)日：2002-09-24

申请号：US09484064

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C08G83/001 ,  C08J3/128 ,  C08K3/36 ,  C08K5/057 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

摘要翻译： 一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和 在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

公开(公告)号：US06375545B1

公开(公告)日：2002-04-23

申请号：US09484252

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  Y10S977/775 ,  Y10S977/888

摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

摘要翻译： 本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造 半导体器件使用它们。 本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。 另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。 聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。 无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。 将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。 并且通过使用CMP浆料制造半导体器件。

公开(公告)号：US08480915B2

公开(公告)日：2013-07-09

申请号：US13236229

申请日：2011-09-19

申请人： Gaku Minamihaba ,  Yukiteru Matsui

发明人： Gaku Minamihaba ,  Yukiteru Matsui

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： B24B57/02 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/76224

摘要： According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括使形成在半导体衬底上的膜与支撑在转台上的旋转抛光垫接触，并将抛光泡沫馈送到与其接触的抛光垫的区域 ，从而研磨膜。 抛光泡沫是通过将水性分散体转化为泡沫体而获得的。 所述水分散体包含0.01〜20质量％的磨粒和0.01〜1质量％的泡沫形成保持剂，全部以水分散体的总质量为基准。

公开(公告)号：US20120258597A1

公开(公告)日：2012-10-11

申请号：US13236229

申请日：2011-09-19

申请人： Gaku Minamihaba ,  Yukiteru Matsui

发明人： Gaku Minamihaba ,  Yukiteru Matsui

IPC分类号： H01L21/304 ,  H01L21/306 ,  B24B41/06

CPC分类号： B24B57/02 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/76224

摘要： According to one embodiment, the method of manufacturing a semiconductor device includes contacting a film formed on a semiconductor substrate with a rotating polishing pad which is supported on a turntable, and feeding polishing foam to a region of the polishing pad with which the film is contacted, thereby polishing the film. The polishing foam is obtained by turning the aqueous dispersion into a foamy body. The aqueous dispersion includes 0.01-20% by mass of abrasive grain and 0.01-1% by mass of foam forming and retaining agent, all based on a total mass of the aqueous dispersion.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括使形成在半导体衬底上的膜与支撑在转台上的旋转抛光垫接触，并将抛光泡沫馈送到与其接触的抛光垫的区域 ，从而研磨膜。 抛光泡沫是通过将水性分散体转化为泡沫体而获得的。 所述水分散体包含0.01〜20质量％的磨粒和0.01〜1质量％的泡沫形成保持剂，全部以水分散体的总质量为基准。

公开(公告)号：US08703004B2

公开(公告)日：2014-04-22

申请号：US13423018

申请日：2012-03-16

申请人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Yukiteru Matsui ,  Masako Kodera ,  Hiroshi Tomita ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： C03C15/00

CPC分类号： H01L21/30625 ,  B24B37/044 ,  B24B37/24 ,  H01L21/67075 ,  H01L21/67219

摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

摘要翻译： 根据一个实施例，公开了用于化学平面化的方法。 该方法可以包括在具有不规则性的待处理膜上形成表面层。 表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。 该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触 通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

公开(公告)号：US20110294291A1

公开(公告)日：2011-12-01

申请号：US13035546

申请日：2011-02-25

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda ,  Masayoshi Iwayama ,  Minoru Amano ,  Masatoshi Yoshikawa ,  Motoyuki Sato ,  Kyoichi Suguro ,  Masako Kodera

IPC分类号： H01L21/768

CPC分类号： H01L21/02697 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883 ,  H01L27/228

摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.

摘要翻译： 根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。 接触插头的下表面连接到开关元件。 接触塞的上表面的最大粗糙度为0.2nm以下。

公开(公告)号：US07052620B2

公开(公告)日：2006-05-30

申请号：US10378994

申请日：2003-03-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba

发明人： Yukiteru Matsui ,  Gaku Minamihaba

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/00

摘要： A polishing slurry for an aluminum-based metal includes an oxidizing agent having a standard electrode potential of 1.7 V or more, amino acid or amino acid compound, and bi- or higher than bi-valent aromatic carboxylic acid having a carbocycle or a heterocycle.

公开(公告)号：US20130095661A1

公开(公告)日：2013-04-18

申请号：US13428163

申请日：2012-03-23

申请人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

发明人： Akifumi GAWASE ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Hajime Eda

IPC分类号： H01L21/302 ,  B24B53/017 ,  B24B37/015 ,  B24B37/013 ,  B24B37/07

CPC分类号： H01L21/76224 ,  C09G1/02 ,  H01L21/31053

摘要： According to one embodiment, a CMP method includes starting a polishing of a silicon oxide film by using a slurry including a silicon oxide abrasive and a polishing stopper film including a silicon nitride film, and stopping the polishing when the polishing stopper is exposed. The slurry includes a first water-soluble polymer with a weight-average molecular weight of 50000 or more and 5000000 or less, and a second water-soluble polymer with a weight-average molecular weight of 1000 or more and 10000 or less.

摘要翻译： 根据一个实施例，CMP方法包括通过使用包括氧化硅研磨剂的浆料和包括氮化硅膜的抛光阻挡膜来开始研磨氧化硅膜，并且在抛光停止剂暴露时停止抛光。 浆料包括重均分子量为50000以上且5000000以下的第一水溶性聚合物和重均分子量为1000以上且10000以下的第二水溶性聚合物。

公开(公告)号：US20130078784A1

公开(公告)日：2013-03-28

申请号：US13425979

申请日：2012-03-21

申请人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

发明人： Gaku MINAMIHABA ,  Akifumi Gawase ,  Yukiteru Matsui ,  Hajime Eda

IPC分类号： H01L21/762 ,  C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76224

摘要： According to one embodiment, the CMP slurry includes abrasive particles made of colloidal silica in an amount of 0.5 to 3% by mass of a total mass of the CMP slurry, and a polycarboxylic acid having a weight average molecular weight of from 500 to 10,000, in an amount of 0.1 to 1% by mass of the total mass of the CMP slurry. 50 to 90% by mass of the abrasive particles each has a primary particle diameter of 3 to 10 nm. The CMP slurry has a pH within a range of 2.5 to 4.5.

摘要翻译： 根据一个实施方案，CMP浆料包括由胶浆二氧化硅制成的磨料颗粒，其量为CMP浆料的总质量的0.5至3质量％，以及重均分子量为500至10,000的多元羧酸， 其量为CMP浆料总质量的0.1〜1质量％。 50〜90质量％的研磨粒子的一次粒径为3〜10nm。 CMP浆料的pH在2.5至4.5的范围内。

公开(公告)号：US20130040456A1

公开(公告)日：2013-02-14

申请号：US13427950

申请日：2012-03-23

申请人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

发明人： Hajime EDA ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Akifumi Gawase

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体衬底上的绝缘膜中形成沟槽。 在绝缘膜上形成下层膜。 在下层膜上形成金属膜。 通过提供含有金属离子的第一CMP浆料来进行其中去除金属膜的第一次抛光。 通过供给有机酸和纯水来清洗抛光垫和半导体基板的表面。 通过供给不同于第一CMP浆料的第二CMP浆料，进行从凹槽以外的部分除去下层膜的第二研磨。