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    REMA objective for microlithographic projection exposure systems
    31.
    发明授权
    REMA objective for microlithographic projection exposure systems 失效
    用于微光刻投影曝光系统的REMA目标

    公开(公告)号：US5982558A

    公开(公告)日：1999-11-09

    申请号：US771654

    申请日：1996-12-23

    申请人： Gerd Furter ,  Johannes Wangler ,  Udo Dinger ,  Gerhard Ittner

    发明人： Gerd Furter ,  Johannes Wangler ,  Udo Dinger ,  Gerhard Ittner

    IPC分类号： G02B13/14 ,  G02B13/24 ,  G03F7/20 ,  H01L21/027 ,  G02B3/00 ,  G02B17/00 ,  G02B21/02

    CPC分类号： G03F7/70066 ,  G02B13/14 ,  G02B13/24 ,  G03F7/70183

    摘要： A REMA objective 123 images an object plane 1 onto the reticle plane 33 and has a lens group 300 disposed in the half of the objective close to the reticle. The object plane 1 lies at a finite spacing. In the lens group 300, the principal ray elevations are greater in magnitude than the elevations of the peripheral rays. A scattering surface 28 is arranged in the lens group 300 having a largest magnitude of sine of the angle of incidence of the principal ray in air with respect to the surface normal (.vertline.sin (i.sub.princ).vertline.) greater than 0.35 and preferably greater than 0.5.

    摘要翻译： REMA目标123将物平面1成像到标线板平面33上，并且具有设置在靠近光罩的物体的一半中的透镜组300。 物平面1位于有限的间距处。 在透镜组300中，主射线高度的大小大于外围射线的高度。 散射表面28布置在透镜组300中，其具有相对于表面法线（| sin（ip​​rinc）|）大于0.35且优选大于0.5的空气中主射线的入射角的最大正弦值的大小 。

    Facet mirror for use in a projection exposure apparatus for microlithography
    32.
    发明授权
    Facet mirror for use in a projection exposure apparatus for microlithography 有权
    用于微光刻的投影曝光装置的分面镜

    公开(公告)号：US09411241B2

    公开(公告)日：2016-08-09

    申请号：US12848603

    申请日：2010-08-02

    申请人： Udo Dinger ,  Martin Endres ,  Armin Werber ,  Norbert Muehlberger ,  Florian Bach

    发明人： Udo Dinger ,  Martin Endres ,  Armin Werber ,  Norbert Muehlberger ,  Florian Bach

    IPC分类号： G03B27/52 ,  G03F7/20 ,  G02B26/06 ,  G02B26/08

    CPC分类号： G03F7/702 ,  G02B5/09 ,  G02B26/06 ,  G02B26/0816 ,  G02B26/0833 ,  G02B27/0927 ,  G03F7/70075 ,  G03F7/70116

    摘要： A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.

    摘要翻译： 在用于微光刻的投影曝光装置中，将使用小平面镜作为束引导光学部件。 小平面镜具有多个独立的反射镜。 对于入射照明光的单独偏转，分离的反射镜在每种情况下都以致动器的方式连接，使得它们可以围绕至少一个倾斜轴线单独倾斜。 连接到致动器的控制装置被配置成使得可以将分离的反射镜的给定分组分组成分离的反射镜组，每个反射镜组在每种情况下包括至少两个分离的反射镜。 其结果是，当安装在投影曝光装置中时，增加了用于设置由投影曝光装置照亮的对象场的各种照明几何形状的可变性的刻面镜。 描述了用于形成小平面反射镜的分立反射镜的各种实施例。

    EUV collector with cooling device
    33.
    发明授权
    EUV collector with cooling device 有权
    EUV集电器带冷却装置

    公开(公告)号：US09007559B2

    公开(公告)日：2015-04-14

    申请号：US13214470

    申请日：2011-08-22

    申请人： Michael Layh ,  Udo Dinger

    发明人： Michael Layh ,  Udo Dinger

    IPC分类号： G03B27/52 ,  G03B27/54 ,  G21K1/06 ,  G03F7/20

    CPC分类号： G21K1/06 ,  G03F7/70175 ,  G03F7/70891 ,  G21K2201/065 ,  G21K2201/067

    摘要： An EUV collector for collecting and transmitting radiation from an EUV radiation source includes at least one collector mirror for reflecting an emission of the EUV radiation source, which is rotationally symmetric with respect to a central axis. The EUV collector also includes a cooling device for cooling the at least one collector mirror. The cooling device has at least one cooling element, which has a course with respect to the collector mirror, in each case, such that the projection of the course into a plane perpendicular to the central axis has a main direction, which encloses an angle of at most 20° with respect to a predetermined preferred direction. The collector transmits improved quality radiation to illuminate an object field.

    摘要翻译： 用于收集和发射来自EUV辐射源的辐射的EUV收集器包括至少一个收集器反射镜，用于反射相对于中心轴旋转对称的EUV辐射源的发射。 EUV收集器还包括用于冷却至少一个收集器反射镜的冷却装置。 冷却装置具有至少一个冷却元件，该冷却元件在每种情况下具有相对于收集器反射镜的过程，使得该过程的投影垂直于中心轴线的平面具有主方向，该主方向包围 相对于预定的优选方向为至多20°。 收集器传输改进的质量辐射以照亮物体场。

    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY
    34.
    发明申请
    ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY 审中-公开
    EUV微观光谱的照明光学

    公开(公告)号：US20110235015A1

    公开(公告)日：2011-09-29

    申请号：US13076730

    申请日：2011-03-31

    申请人： Guenther Dengel ,  Gero Wittich ,  Udo Dinger ,  Ralf Stuetzle ,  Martin Endres ,  Jens Ossmann ,  Berndt Warm

    发明人： Guenther Dengel ,  Gero Wittich ,  Udo Dinger ,  Ralf Stuetzle ,  Martin Endres ,  Jens Ossmann ,  Berndt Warm

    IPC分类号： G03B27/72

    CPC分类号： G03F7/7085 ,  G03F7/70141 ,  G03F7/702 ,  G03F7/70558

    摘要： An illumination optics for EUV microlithography illuminates an object field with the aid of an EUV used radiation beam. Preset devices preset illumination parameters. An illumination correction device corrects the intensity distribution and/or the angular distribution of the object field illumination. The latter has an optical component to which the used radiation beam is at least partially applied upstream of the object field and which can be driven in a controlled manner. A detector acquires one of the illumination parameters. An evaluation device evaluates the detector data and converts the latter into control signals. At least one actuator displaces the optical component. During exposures, the actuators are controlled with the aid of the detector signals during the period of a projection exposure. A maximum displacement of below 8 μm is ensured for edges of the object field towards an object to be exposed. The result is an illumination optics that is used to ensure conformance with preset illumination parameters even given the most stringent demands upon precision.

    摘要翻译： 用于EUV微光刻的照明光学器件借助EUV使用的辐射束照亮物体场。 预设设备预设照明参数。 照明校正装置校正物场照明的强度分布和/或角分布。 后者具有光学部件，使用的辐射束至少部分地施加在物场的上游，并且可以以受控的方式驱动。 检测器获取照明参数之一。 评估装置评估检测器数据并将其转换成控制信号。 至少一个致动器移动光学部件。 在曝光期间，在投影曝光期间借助于检测器信号来控制致动器。 确保物体边缘朝向待曝光物体的8μm以下的最大位移。 结果是一个照明光学器件，用于确保符合预设的照明参数，即使在最严格的精度要求下。

    OPTICAL ELEMENT WITH MULTIPLE PRIMARY LIGHT SOURCES
    36.
    发明申请
    OPTICAL ELEMENT WITH MULTIPLE PRIMARY LIGHT SOURCES 有权
    具有多个主光源的光学元件

    公开(公告)号：US20090257040A1

    公开(公告)日：2009-10-15

    申请号：US12470092

    申请日：2009-05-21

    申请人： Udo Dinger

    发明人： Udo Dinger

    IPC分类号： G03B27/54 ,  F21V7/00

    CPC分类号： G03B27/54 ,  G02B27/0905 ,  G02B27/0983 ,  G03F7/7005 ,  G03F7/702 ,  G03F7/70391

    摘要： The disclosure relates to an illumination system, such as an illumination system for use in microlithography. The illumination system can include an optical element with multiple primary light sources. The illumination system can illuminate a field in a field plane having a field contour. The illumination system can be configured so that each primary light source illuminates an area in the field plane that is smaller than a size of an area encircled by the field contour.

    摘要翻译： 本公开涉及照明系统，例如用于微光刻的照明系统。 照明系统可以包括具有多个主要光源的光学元件。 照明系统可以照射具有场轮廓的场平面中的场。 照明系统可以被配置为使得每个主光源照亮场平面中的小于由场轮廓包围的区域的尺寸的区域。

    Microlithography reduction objective and projection exposure apparatus
    40.
    发明授权
    Microlithography reduction objective and projection exposure apparatus 有权
    微光学削减物镜和投影曝光装置

    公开(公告)号：US06600552B2

    公开(公告)日：2003-07-29

    申请号：US10004674

    申请日：2001-12-03

    申请人： Udo Dinger

    发明人： Udo Dinger

    IPC分类号： G03B2754

    CPC分类号： G03F7/70233 ,  G02B17/0657 ,  G03F7/70275

    摘要： A microlithography reduction objective formed from six mirrors arranged in a light path between an object plane and an image plane is provided. The microlithography reduction objective is characterized by having an image-side numerical aperture NA≧0.15. In some embodiments, the mirror closest to the image plane, i.e., the fifth mirror is arranged such that an image-side optical free working distance is greater than or equal to a used diameter of a physical mirror surface of the fifth mirror, a physical mirror surface being the area of a mirror where light rays from the object impinge. The fifth mirror may be arranged such that an image-side optical free working distance is greater than or equal to the sum of one-third the used diameter of the physical mirror surface on the fifth mirror and a length between 20 mm and 30 mm. The fifth mirror may be arranged such that the image-side optical free working distance is at least 50 mm, as well. The image-side free working distance is the physical distance between the vertex of the surface of the fifth mirror and the image plane. Other embodiments are described.

    摘要翻译： 提供由布置在物平面和像平面之间的光路中的六个反射镜形成的微光刻折射物镜。 微光学降解物镜的特征在于具有图像侧数值孔径NA> = 0.15。 在一些实施例中，最靠近图像平面的反射镜（即，第五镜）布置成使得图像侧光学自由工作距离大于或等于第五反射镜的物理镜表面的使用直径，物理 镜面是来自物体的光线撞击的镜子区域。 第五镜可以被布置成使得图像侧光学自由工作距离大于或等于第五反射镜上的物理镜表面的使用直径的三分之一与20mm和30mm之间的长度的总和。 第五镜可以被布置成使得图像侧光学自由工作距离也至少为50mm。 图像侧的自由工作距离是第五反射镜的表面的顶点与图像平面之间的物理距离。 描述其他实施例。