摘要:
A timing adjustment device, method and chip for a bus interface. Through repetitive adjustment of the amount of phase shift in the clocking signal to the bus interface, read/write testing of the bus interface and checking for the correctness of the read/write data, suitability of the phase shift in the memory bus clocking signal for operating normally is determined. Hence, a safety range for the amount of phase shift in the bus interface timing signal is found and the phase shift of the bus interface timing signal is set to the mid-point of the safety range. The method may also be applied to a system bus and the timing adjustment of signals between a control chipset bus and a memory bus.
摘要:
A vertical Light Emitting Diode (LED) device includes an epi structure with a first-type-doped portion, a second-type-doped portion, and a quantum well structure between the first-type-doped and second-type-doped portions and a carrier structure with a plurality of conductive contact pads in electrical contact with the epi structure and a plurality of bonding pads on a side of the carrier structure distal the epi structure, in which the conductive contact pads are in electrical communication with the bonding pads using at least one of vias and a Redistribution Layer (RDL). The vertical LED device further includes a first insulating film on a side of the carrier structure proximal the epi structure and a second insulating film on a side of the carrier structure distal the epi structure.
摘要:
A method of light-emitting diode (LED) packaging includes coupling a number of LED dies to corresponding bonding pads on a sub-mount. A mold apparatus having concave recesses housing LED dies is placed over the sub-mount. The sub-mount, the LED dies, and the mold apparatus are heated in a thermal reflow process to bond the LED dies to the bonding pads. Each recess substantially restricts shifting of the LED die with respect to the bonding pad during the heating.
摘要:
The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
摘要:
A core logic coupled to a main memory of a computer, comprising an analyzer and a power management unit. The analyzer monitors access request traffic load of main memory. The power management unit employs various power performance trade-off activities with the knowledge of the monitored traffic load according to the state machine.
摘要:
A package structure includes: a substrate having a first side and a second side opposite to the first side; a metal layer disposed over at least a portion of the second side of the substrate; a light-reflective layer disposed over the first side of the substrate; and a photonic device bonded to the light-reflective layer from the first side. A segment of the metal layer extends through the substrate from the first side to the second side, and a portion of the substrate is completely enclosed in a cross-sectional view by the metal layer. The package structure is free of a bonding wire over the second side of the substrate.
摘要:
A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.
摘要:
The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.
摘要:
Chipsets capable of preventing malfunction caused by feedback clock distortion are provided, in which a phase frequency detector generates a control voltage according to a first reference clock and a first feedback clock, a voltage-controlled oscillator generates an output clock according to the control voltage, a frequency divider performs a frequency-division on a second feedback clock to obtain the first feedback clock, and a frequency filter estimates swings and frequency of a third feedback clock from an external unit and selectively outputs one of the third feedback clock or the output clock to serve as the second clock.