公开(公告)号：US20120034759A1

公开(公告)日：2012-02-09

申请号：US13262915

申请日：2010-04-02

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Nobuo Kawase ,  Kenji Nakagawa

IPC分类号： H01L21/30

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/12 ,  H01L24/16 ,  H01L24/90 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73203 ,  H01L2224/90 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

摘要翻译： 一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

公开(公告)号：US06764120B2

公开(公告)日：2004-07-20

申请号：US09883997

申请日：2001-06-20

申请人： Kenji Nakagawa ,  Hidenori Shirai

发明人： Kenji Nakagawa ,  Hidenori Shirai

IPC分类号： B32B310

CPC分类号： B67C3/24 ,  B65G2201/0261 ,  Y10S294/902 ,  Y10T428/24008

摘要： A material holding implement including a material holding member adapted for holding a material. The material holding member is made of a thermoplastic resin. The thermoplastic resin is deformable to a material holding configuration at a temperature greater than a constant temperature, and fixable to form a material holding region adapted to apply holding forces on a circumference of the material in a using temperature range lower than the constant temperature. Furthermore, a method of changing a form of the material holding member is provided. The method includes softening the resin by increasing a temperature above the constant temperature, molding the resin into a flat plate by pinching together upper and lower dies having flat surfaces opposing each other, pinching the resin using the upper and lower dies to form a material holding configuration, and fixing the resin by decreasing the temperature below a softening point of the resin.

摘要翻译： 一种材料保持工具，其包括适于保持材料的材料保持构件。 材料保持构件由热塑性树脂制成。 热塑性树脂可以在大于恒温的温度下变形为材料保持构型，并且可固定以形成适于在低于恒定温度的使用温度范围内在材料的圆周上施加保持力的材料保持区域。 此外，提供了改变材料保持构件的形状的方法。 该方法包括通过将温度升高到恒定温度来软化树脂，通过将具有彼此相对的平坦表面的上模和下模夹在一起而将树脂模制成平板，使用上模和下模夹住树脂以形成保持 配置，并且通过将温度降低到低于树脂的软化点来固定树脂。

公开(公告)号：US06420094B1

公开(公告)日：2002-07-16

申请号：US09500527

申请日：2000-02-09

申请人： Tamae Haruki ,  Kenji Nakagawa ,  Satoru Asai ,  Isamu Hanyu

发明人： Tamae Haruki ,  Kenji Nakagawa ,  Satoru Asai ,  Isamu Hanyu

IPC分类号： G03F720

CPC分类号： G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

摘要翻译： 在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。 光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。 变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。 光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。 两条线性光线相对于光轴对称。 当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

公开(公告)号：US5607821A

公开(公告)日：1997-03-04

申请号：US510128

申请日：1995-08-01

申请人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

发明人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

IPC分类号： G03F7/20 ,  G03F7/207 ,  G03C5/04 ,  G03B27/32 ,  G03B27/68 ,  G03B27/72

CPC分类号： G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

摘要翻译： 在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。 光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。 变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。 光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。 两条线性光线相对于光轴对称。 当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

公开(公告)号：US5562151A

公开(公告)日：1996-10-08

申请号：US261347

申请日：1994-06-16

申请人： Kenji Nakagawa ,  Nozomu Tamura ,  Saburo Moriwaki ,  Kiyoshi Shibuya ,  Shun Suhara ,  Kazuyuki Katoh ,  Toru Sato ,  Toshitane Matsukawa

发明人： Kenji Nakagawa ,  Nozomu Tamura ,  Saburo Moriwaki ,  Kiyoshi Shibuya ,  Shun Suhara ,  Kazuyuki Katoh ,  Toru Sato ,  Toshitane Matsukawa

IPC分类号： B22D11/06 ,  B22D11/12

CPC分类号： B22D11/0694

摘要： Apparatus and method of producing a thin metal ribbon by pouring a molten metal onto the surface of a quench roll rotating at a high speed so as to rapidly cool and solidify the metal to form the ribbon, separating the ribbon from the quench roll and conveying the same to a take-up device. A compressed gas is blown tangent to the quench roll to separate the ribbon from the quench roll. The separated ribbon is sucked and caught by a suction conveyor which runs at a velocity greater than the speed of production of the thin meal ribbon thereby imparting tension to the ribbon.

摘要翻译： 通过将熔融金属倾倒在高速旋转的淬火辊的表面上以便快速冷却和固化金属以形成带状物，从而将带与淬火辊分离并输送 与卷取装置相同。 将压缩的气体与淬火辊相切地进行吹扫，以使带与淬火辊分离。 分离的带被吸入并被吸入输送机捕获，该抽吸输送机以大于薄餐巾带的生产速度的速度运行，从而向带施加张力。

公开(公告)号：US5489509A

公开(公告)日：1996-02-06

申请号：US54608

申请日：1993-04-30

申请人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

发明人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

IPC分类号： G03F1/00 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F1/28

摘要： A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.

摘要翻译： 掩模包括相对于曝光光透明的第一层和形成在透明层上的相移掩模图案。 该图案包括一个或多个相移区域，其适于透射照射在其上的曝光光，并且相对于穿过没有相移层的掩模的一部分的光的相位移动透射光的相位。

公开(公告)号：US5415952A

公开(公告)日：1995-05-16

申请号：US132165

申请日：1993-10-05

申请人： Tamae Haruki ,  Kenji Nakagawa

发明人： Tamae Haruki ,  Kenji Nakagawa

IPC分类号： G03F1/29 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F7/70283 ,  G03F7/70433 ,  G03F7/705 ,  G03F7/70583

摘要： A mask for forming a desired pattern on the image plane is divided into a number of dell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final, pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.

摘要翻译： 用于在图像平面上形成期望图案的掩模被分成多个区域。 每个单元格被赋予均匀的特征。 每个单元格区域被赋予特定的光透射特性以形成可以是期望的目标图案本身的起始图案。 每个单元区域的光传输特性随机变化。 模拟光强分布，仅选择具有良好性能的图案。 这种特征变化一直持续到继承操作收敛并获得最终的图案。 该最终图案用作掩模图案。 上述过程也可以应用于确定孔径光阑和光源的形状。

公开(公告)号：US5338647A

公开(公告)日：1994-08-16

申请号：US965086

申请日：1992-10-22

申请人： Kenji Nakagawa ,  Kenichi Kawashima

发明人： Kenji Nakagawa ,  Kenichi Kawashima

IPC分类号： G03F1/70 ,  G03F1/00 ,  G03F1/26 ,  G03F1/76 ,  G03F1/80 ,  G03F7/20 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F1/26

摘要： A reflection type photomask includes a substrate, and a reflecting surface formed on the substrate and including a first region and a second region which have a relative height difference. Due to the concavo-convex structure of the reflecting surface, a light reflected from the first region and a light reflected from the second region have a predetermined phase difference which may be used effectively to form a pattern on a photoresist layer.

摘要翻译： 反射型光掩模包括基板和形成在基板上并包括第一区域和具有相对高度差的第二区域的反射表面。 由于反射表面的凹凸结构，从第一区域反射的光和从第二区域反射的光具有预定的相位差，其可以有效地用于在光致抗蚀剂层上形成图案。

公开(公告)号：US4560666A

公开(公告)日：1985-12-24

申请号：US678977

申请日：1984-12-06

申请人： Masahiro Yoshida ,  Kenji Nakagawa

发明人： Masahiro Yoshida ,  Kenji Nakagawa

IPC分类号： A61F2/00 ,  A61L27/12 ,  C03C4/00 ,  C03C10/00

CPC分类号： A61L27/12 ,  A61K6/0044 ,  A61K6/0085 ,  A61K6/0215 ,  A61K6/0235 ,  A61K6/024 ,  A61K6/0255 ,  A61K6/0273 ,  C03C10/0045 ,  C03C4/0007 ,  A61F2310/00293 ,  Y10S623/919

摘要： A high strength glass-ceramic containing apatite and alkaline earth metal silicate (diopside/forsterite/akermanite) crystals having an excellent affinity for a living body and a process for producing the same are disclosed. The glass-ceramic is useful as an implant material such as an artificial dental root and an artificial bone.

摘要翻译： 公开了一种含有对活体具有优异亲和力的磷灰石和碱土金属硅酸盐（透辉石/镁橄榄石/白云石）晶体的高强度玻璃陶瓷及其制造方法。 玻璃陶瓷可用作植入材料，例如人造牙根和人造骨。

公开(公告)号：US4391916A

公开(公告)日：1983-07-05

申请号：US351688

申请日：1982-02-24

申请人： Kenji Nakagawa ,  Isao Masuda

发明人： Kenji Nakagawa ,  Isao Masuda

IPC分类号： C03C3/105 ,  C03C3/112 ,  C03C4/00 ,  G03F1/00 ,  G03F1/60 ,  C03C3/10

CPC分类号： G03F1/60 ,  C03C3/105 ,  C03C3/112

摘要： An alkali-free glass composition for a photoetching mask is described, which comprises, all by mol, 55 to 65% SiO.sub.2, 7 to 11% Al.sub.2 O.sub.3, 1 to 11% PbO, 7 to 20% CaO, 3 to 13% MgO, 3 to 13% ZnO, 0 to 3% ZrO.sub.2, 0 to 3% F.sub.2, 0 to 5% As.sub.2 O.sub.3, and 0 to 5% Sb.sub.2 O.sub.3. This glass is free from defects such as pinholes, has a relatively low coefficient of thermal expansion and contains no air bubbles, and a photoetching mask composed of the glass composition.

摘要翻译： 描述了一种用于光刻掩模的无碱玻璃组合物，其包括全部为55至65％的SiO 2，7至11％的Al 2 O 3，1至11％的PbO，7至20％的CaO，3至13％的MgO， 3〜13％的ZnO，0〜3％的ZrO2，0〜3％的F2，0〜5％的As2O3和0〜5％的Sb2O3。 该玻璃没有诸如针孔的缺陷，具有相对低的热膨胀系数并且不含气泡，以及由玻璃组合物构成的光刻掩模。