利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

62 条记录 (耗时 0.024 秒)

    Semiconductor light-emitting device
    31.
    发明授权
    Semiconductor light-emitting device 失效
    半导体发光装置

    公开(公告)号：US06639926B1

    公开(公告)日：2003-10-28

    申请号：US09274767

    申请日：1999-03-24

    申请人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

    发明人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2231 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/34326

    摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

    摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。

    Semiconductor laser diode
    32.
    发明授权
    Semiconductor laser diode 失效
    半导体激光二极管

    公开(公告)号：US06172998B2

    公开(公告)日：2001-01-09

    申请号：US08971719

    申请日：1997-11-17

    申请人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

    发明人： Hideyoshi Horie ,  Toshinari Fujimori ,  Satoru Nagao ,  Hideki Goto

    IPC分类号： H01S319

    CPC分类号： B82Y20/00 ,  H01S5/204 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34313 ,  H01S5/3432

    摘要： The present invention relates to a semiconductor laser diode comprising a GaAs substrate and at least a first conduction-type clad layer, an active layer containing In, Ga and As as component elements, a second conduction-type first clad layer, a current block layer and a second conduction-type second clad layer which are deposited on the substrate in order, wherein a current injection region is formed by said current block layer and said second conduction-type second clad layer, the effective refractive index step &Dgr;neff in the horizontal direction is from 2.5×10−3 to 5.0×10−3 at the emission wavelength, and the width W of the current injection region is from 1.5 to 2.5 &mgr;m. The semiconductor laser diode of the present invention is suited for uses where high output and long life-time are required, such as excitation light source for optical fiber amplifiers.

    摘要翻译： 本发明涉及包括GaAs衬底和至少第一导电型覆盖层的半导体激光二极管，包含In，Ga和As作为元件的有源层，第二导电型第一覆盖层，电流阻挡层 和第二导电型第二包覆层，其顺序淀积在所述衬底上，其中由所述电流阻挡层和所述第二导电型第二覆盖层形成电流注入区域，在水平方向上的有效折射率梯度DELTAneff 在发射波长处为2.5×10 -3〜5.0×10 -3，电流注入区域的宽度W为1.5〜2.5μm。 本发明的半导体激光二极管适用于需要高输出和长使用寿命的用途，例如用于光纤放大器的激发光源。

    Semiconductor device having a p-type ohmic electrode structure
    33.
    发明授权
    Semiconductor device having a p-type ohmic electrode structure 失效
    具有p型欧姆电极结构的半导体器件

    公开(公告)号：US5644165A

    公开(公告)日：1997-07-01

    申请号：US606867

    申请日：1996-02-27

    申请人： Hideki Goto

    发明人： Hideki Goto

    IPC分类号： H01L21/441 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L31/0328 ,  H01L23/48 ,  H01L23/52 ,  H01L29/22

    CPC分类号： H01L33/40 ,  H01L21/441 ,  H01L2924/0002 ,  H01L33/28

    摘要： A p-type ohmic metal electrode for use with a group II-VI semiconductor device. The p-type ohmic metal electrode is made of a group II-IV p-type semiconductor layer having a group II element other than zinc dispersed in that layer disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the group II-IV semiconductor layer including the group II element other than zinc. Also disclosed is a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium and the above ohmic metal electrode disposed on the group II-IV semiconductor device. Additionally, a group II-IV semiconductor device including a p-type group II-IV semiconductor containing zinc and selenium, a layer of a group II element other than zinc disposed on the group II-IV semiconductor device, and a metal electrode layer disposed on the layer of the group II element other than zinc is disclosed.

    摘要翻译： 一种用于II-VI族半导体器件的p型欧姆金属电极。 p型欧姆金属电极由配置在II-Ⅳ族半导体器件上的层中分散有除了锌以外的第II族元素的II-IV族p型半导体层和设置在第i-Ⅳ型半导体元件上的金属电极层 包含除了锌以外的第II族元素的II-Ⅳ族半导体层。 还公开了包括含有锌和硒的p型II-Ⅳ族半导体的组II-IV半导体器件和设置在II-Ⅳ族半导体器件上的上述欧姆电极。 此外，包括含有锌和硒的p型II-IV族半导体的组II-IV半导体器件，设置在II-IV族半导体器件上的除了锌之外的第II族元素的层和设置在金属电极层 公开了除了锌以外的II族元素的层。

    Sheet feeding apparatus
    36.
    发明授权
    Sheet feeding apparatus 失效
    送纸装置

    公开(公告)号：US5203552A

    公开(公告)日：1993-04-20

    申请号：US625890

    申请日：1990-12-11

    申请人： Akimitsu Hoshi ,  Masaaki Sato ,  Takaji Yonemori ,  Hideki Goto

    发明人： Akimitsu Hoshi ,  Masaaki Sato ,  Takaji Yonemori ,  Hideki Goto

    IPC分类号： B65H3/00 ,  B65H3/44 ,  B65H3/46 ,  B65H3/68 ,  B65H5/06 ,  B65H29/58 ,  G03G15/00 ,  G03G21/16

    CPC分类号： G03G15/6508 ,  B65H29/58 ,  B65H3/44 ,  G03G21/1619 ,  G03G21/1647 ,  B65H2402/10 ,  G03G2215/00383 ,  G03G2215/0054

    摘要： A sheet feeding apparatus for feeding a sheet to a sheet receiving device includes a first unit having at least one stacking tray for stacking sheets; a first feeder for feeding the sheet from the stacking tray of the first unit; a first guiding member for guiding the sheet from the first feeder to the receiving device; a second guiding member for guiding a side of the sheet opposite from a side guided by the first guiding member to constitute together with the first guiding member a sheet passage; a second unit having at least one stacking tray for stacking sheets; second feeder for feeding the sheet from the stacking tray of the second unit; a third guiding member for guiding the sheet from the second feeder to the receiving device; and a supporting device for supporting the first unit to the second unit for movement between a first position wherein the first guiding member guides the sheet from the first feeder and a second position wherein at least one of the first guiding member and the second guiding member are exposed.

    摘要翻译： 用于将片材送入片材接收装置的片材进给装置包括具有至少一个用于堆叠片材的堆垛盘的第一单元; 用于从所述第一单元的所述堆叠托盘供给所述片材的第一馈送器; 第一引导构件，用于将片材从第一馈送器引导到接收装置; 第二引导构件，用于引导与由所述第一引导构件引导的一侧相对的所述片的一侧，以与所述第一引导构件一起构成片通路; 具有至少一个用于堆叠纸张的堆垛托盘的第二单元; 用于从第二单元的堆叠托盘供给片材的第二馈送器; 第三引导构件，用于将片材从第二馈送器引导到接收装置; 以及用于将所述第一单元支撑到所述第二单元以在第一位置和第二位置之间移动的支撑装置，所述第一位置是所述第一引导构件从所述第一馈送器引导所述片材，其中所述第一引导构件和所述第二引导构件中的至少一个 裸露。

    METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE
    38.
    发明申请
    METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE 审中-公开
    用于制造自由基GaN基板的方法和装置

    公开(公告)号：US20130276697A1

    公开(公告)日：2013-10-24

    申请号：US13996221

    申请日：2011-01-07

    申请人： Hideki Goto

    发明人： Hideki Goto

    IPC分类号： C30B25/12

    CPC分类号： C30B25/12 ,  C30B25/00 ,  C30B25/02 ,  C30B29/406

    摘要： It is to suppress abnormal growth of GaN crystals around edge ends of a seed substrate. A susceptor is provided that has a pocket section in which a seed substrate is fixed, and a sub-susceptor provided between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap provided between the seed substrate and the sub-susceptor.

    摘要翻译： 这是为了抑制晶种边缘的氮化镓晶体的异常生长。 提供了一种感受器，其具有固定种子基板的袋状部分，以及设置在基座和种子基板之间的子感受体，子感受体不与种子基底反应，在种子之间设置有间隙 基底和亚基座。