公开(公告)号：US07145142B2

公开(公告)日：2006-12-05

申请号：US10306160

申请日：2002-11-29

Applicant: Hideyuki Funaki ,  Keitaro Shigenaka ,  Yujiro Naruse ,  Ikuo Fujiwara ,  Naoya Mashio

Inventor： Hideyuki Funaki ,  Keitaro Shigenaka ,  Yujiro Naruse ,  Ikuo Fujiwara ,  Naoya Mashio

IPC: G01J5/24 ,  H01L27/14 ,  H01L31/105 ,  H03K3/42 ,  C12Q1/68

CPC classification number: G01J5/24 ,  C12Q1/68 ,  C12Q1/6837 ,  G01J5/023 ,  G01J5/20 ,  C12Q2565/607

Abstract: A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

Abstract translation: 传感器装置包括其中布置有红外传感器的传感器阵列和连接到传感器阵列的输出信号线的检测电路。 检测电路包括具有选择性驱动的充电电路的电容器，检测并放大流向输出信号线的传感器电流的变化的读出放大器电路，将输出电流从 感测放大器电路变为电压，放电电路由电流 - 电压转换电路的输出电压控制以对电容器进行放电;以及输出电路，其输出电容器的端子电压。

公开(公告)号：US20050052724A1

公开(公告)日：2005-03-10

申请号：US10895049

申请日：2004-07-21

Applicant: Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

Inventor： Kazuhiro Suzuki ,  Hideyuki Funaki ,  Keitaro Shigenaka ,  Tomio Ono ,  Tadashi Sakai ,  Yujiro Naruse ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC: H04R1/38 ,  G01H9/00 ,  G02F1/33

CPC classification number: G01H9/00

Abstract: An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

Abstract translation: 光声装置包括具有衍射光栅的光阑，所述光阑易受外力驱动的振动; 定向成照射衍射光栅的光源; 以及光检测器，被配置为检测由衍射光栅衍射的光并将检测到的光转换成电信号。 电信号对应于隔膜中振动的位移。

公开(公告)号：US06211549B1

公开(公告)日：2001-04-03

申请号：US09153295

申请日：1998-09-15

Applicant: Hideyuki Funaki ,  Akio Nakagawa

Inventor： Hideyuki Funaki ,  Akio Nakagawa

IPC: H01L2976

CPC classification number: H01L27/0688 ,  H01L21/8221 ,  H01L29/7317 ,  H01L29/7397

Abstract: A semiconductor device includes a first semiconductor element and a second semiconductor element, wherein the first semiconductor element of trench structure and the control circuit including the second semiconductor element such as a TFT or a bipolar transistor can be easily integrated by making the device structure such that the source layer of the buried gate electrode of the first semiconductor element and part of the second semiconductor element, such as the emitter or collector region, can be simultaneously formed.

Abstract translation: 半导体器件包括第一半导体元件和第二半导体元件，其中沟槽结构的第一半导体元件和包括诸如TFT或双极晶体管的第二半导体元件的控制电路可以通过使器件结构使得 可以同时形成第一半导体元件的掩埋栅电极的源极层和第二半导体元件的一部分，例如发射极或集电极区域。

公开(公告)号：US6163051A

公开(公告)日：2000-12-19

申请号：US154041

申请日：1998-09-16

Applicant: Akio Nakagawa ,  Tomoko Matsudai ,  Hideyuki Funaki ,  Norio Yasuhara

Inventor： Akio Nakagawa ,  Tomoko Matsudai ,  Hideyuki Funaki ,  Norio Yasuhara

IPC: H01L21/331 ,  H01L29/06 ,  H01L29/739 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L29/66325 ,  H01L29/0696 ,  H01L29/7394 ,  H01L29/7398

Abstract: A high breakdown voltage semiconductor device comprising a first base region of a first conductivity type, a second base region of a second conductivity type, which is formed in a surface region of the first base region, a first gate insulation film formed on an inner wall of a first LOCOS groove formed passing through the second base region to reach the first base region, a first gate electrode formed on the first gate insulation film, a first source region of a first conductivity type, which is formed in a surface region of the second base region around the first LOCOS groove in such a manner as to contact with the first gate insulating film, a first drain region formed in a surface region of the first base region in such a manner as to be spaced apart from the second base region, a source electrode formed on the first source region and on the second base region, and a drain electrode formed on the first drain region.

Abstract translation: 一种高耐压电压半导体器件，包括第一导电类型的第一基极区域和形成在第一基极区域的表面区域中的第二导电类型的第二基极区域，形成在内壁上的第一栅极绝缘膜 形成为穿过第二基极区域以到达第一基极区域的第一LOCOS沟槽，形成在第一栅极绝缘膜上的第一栅极电极，形成在第一栅极绝缘膜的表面区域中的第一导电类型的第一源极区域， 第二基区，以与第一栅极绝缘膜接触的方式围绕第一LOCOS沟槽;第一漏极区，形成在第一基极区域的表面区域中，以与第二基极区域隔开; 形成在第一源极区域和第二基极区域上的源电极以及形成在第一漏极区域上的漏电极。

公开(公告)号：US6133617A

公开(公告)日：2000-10-17

申请号：US393273

申请日：1999-09-10

Applicant: Keizo Hirayama ,  Hideyuki Funaki ,  Fumito Suzuki ,  Akio Nakagawa

Inventor： Keizo Hirayama ,  Hideyuki Funaki ,  Fumito Suzuki ,  Akio Nakagawa

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/47 ,  H01L29/861 ,  H01L29/872 ,  H01L27/095 ,  H01L29/812 ,  H01L31/07

CPC classification number: H01L29/404 ,  H01L29/0692 ,  H01L29/8611 ,  H01L29/872 ,  Y10S257/928

Abstract: Disclosed is a high breakdown voltage semiconductor device comprising a semiconductor substrate, an active layer consisting of a high resistivity semiconductor layer of a first conductivity type formed on the substrate with an insulating layer interposed therebetween, a first impurity region of the first conductivity type formed within the active layer, a second impurity region of a second conductivity type formed within the active layer, a third impurity region of the second conductivity type formed within the second impurity region and having a high impurity concentration, a first electrode being in ohmic contact with the first impurity region and the fourth impurity region, and a second electrode being in Schottky contact with the second impurity region and in ohmic contact with the third impurity region.

Abstract translation: 公开了一种高耐压电压半导体器件，包括半导体衬底，由在衬底上形成有绝缘层的第一导电类型的高电阻率半导体层组成的有源层，其间形成有第一导电类型的第一杂质区， 有源层，在有源层内形成的第二导电类型的第二杂质区，形成在第二杂质区内并具有高杂质浓度的第二导电类型的第三杂质区，第一电极与 第一杂质区和第四杂质区，以及与第二杂质区肖特基接触并与第三杂质区欧姆接触的第二电极。

公开(公告)号：US6133607A

公开(公告)日：2000-10-17

申请号：US82937

申请日：1998-05-22

Applicant: Hideyuki Funaki ,  Akio Nakagawa

Inventor： Hideyuki Funaki ,  Akio Nakagawa

IPC: H01L29/739 ,  H01L29/76

CPC classification number: H01L29/7394

Abstract: The present invention provides a semiconductor device having high-speed switching characteristics and high output characteristics. More specifically, the semiconductor device includes a second conductivity type drain layer having a low impurity concentration, for decreasing the efficiency of injecting holes, and a second conductivity type contact layer having a high impurity concentration, for avoiding an increase in contact resistance. With this structure, an increase in ON-state voltage can be avoided while improving the switching rate by the second conductivity type drain layer. That is, the present invention achieves high-speed switching characteristics and high output characteristics at the same time.

Abstract translation: 本发明提供一种具有高速开关特性和高输出特性的半导体器件。 更具体地，半导体器件包括具有低杂质浓度的第二导电类型漏极层，用于降低注入孔的效率，以及具有高杂质浓度的第二导电型接触层，以避免接触电阻的增加。 利用这种结构，可以避免在通过第二导电类型漏极层改善开关速率的同时增加导通电压。 也就是说，本发明同时实现高速开关特性和高输出特性。

公开(公告)号：US5777371A

公开(公告)日：1998-07-07

申请号：US716863

申请日：1996-09-20

Applicant: Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Hideyuki Funaki

Inventor： Yusuke Kawaguchi ,  Yoshihiro Yamaguchi ,  Hideyuki Funaki

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC classification number: H01L29/7816 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7801 ,  H01L29/7824 ,  H01L29/42368

Abstract: A high-breakdown-voltage semiconductor device includes a high-resistance semiconductor layer, a drift layer of the first conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a drain layer formed in the surface of the drift layer of the first conductivity type, base layers of the second conductivity type selectively formed in the surface of the high-resistance semiconductor layer, a plurality of island-shaped source layers of the first conductivity type formed in the surfaces of the base layers of the second conductivity type, a gate electrode formed on the base layers of the second conductivity type between the source layers of the first conductivity type and the drift layer of the first conductivity type and between adjacent source layers of the first conductivity type via a gate insulating film, a drain electrode which contacts the drain layer, and source electrodes which contact both the source layers of the first conductivity type and the base layers of the second conductivity type.

Abstract translation: 高耐压半导体器件包括高电阻半导体层，选择性地形成在高电阻半导体层的表面中的第一导电类型的漂移层，形成在所述高电阻半导体层的漂移层的表面中的漏极层 第一导电类型，选择性地形成在高电阻半导体层的表面中的第二导电类型的基极层，形成在第二导电类型的基极层的表面中的多个第一导电类型的岛状源极层 形成在第一导电类型的源极层和第一导电类型的漂移层之间的第二导电类型的基极层上的栅极电极和经由栅极绝缘膜的第一导电类型的相邻源极层之间， 与漏极层接触的电极以及接触第一导电类型的源极层的源电极 第二导电类型的基层。

公开(公告)号：US5438220A

公开(公告)日：1995-08-01

申请号：US085056

申请日：1993-07-02

Applicant: Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

Inventor： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

IPC: H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC classification number: H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286 ,  H01L29/78603 ,  H01L2924/0002

Abstract: A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.

Abstract translation: 高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区 形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。 第一杂质区由扩散层形成。 扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

公开(公告)号：US09136290B2

公开(公告)日：2015-09-15

申请号：US13416036

申请日：2012-03-09

Applicant: Kazuhiro Suzuki ,  Risako Ueno ,  Honam Kwon ,  Mitsuyoshi Kobayashi ,  Hideyuki Funaki

Inventor： Kazuhiro Suzuki ,  Risako Ueno ,  Honam Kwon ,  Mitsuyoshi Kobayashi ,  Hideyuki Funaki

IPC: H01L27/146

CPC classification number: H01L27/14618 ,  H01L24/32 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

Abstract translation: 根据一个实施例，固态成像装置包括具有形成在上表面上的多个像素的传感器基板，形成有多个微透镜的微透镜阵列基板和一端连接到微透镜之间的区域的连接柱 微透镜阵列基板并且另一端结合到上表面。

公开(公告)号：US09094594B2

公开(公告)日：2015-07-28

申请号：US13039508

申请日：2011-03-03

Applicant: Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

Inventor： Mitsuyoshi Kobayashi ,  Hideyuki Funaki ,  Risako Ueno

IPC: H04N7/18 ,  H04N5/225 ,  G01C3/08 ,  G01C3/10

CPC classification number: H04N5/2254 ,  G01C3/08 ,  G01C3/10

Abstract: According to an embodiment, a solid-state imaging device includes: an imaging device including an imaging area including a plurality of pixel blocks each of which includes a plurality of pixels; an image formation lens forming an image on an image formation plane by using light from a subject; an aperture unit including a plurality of aperture elements provided to associate with the plurality of pixel blocks, each of the aperture elements having an aperture portion and a shield portion, light from the image formation lens being filtered by each aperture element; a microlens array including a plurality of microlenses provided to associate with the plurality of aperture elements, each of the microlenses forming an image in the imaging area by using light filtered by an associated aperture element; and a signal processing circuit configured to process a signal of an image taken in the imaging area and estimates a distance to the subject.

Abstract translation: 根据实施例，固态成像装置包括：成像装置，其包括具有包括多个像素的多个像素块的成像区域; 图像形成透镜，通过使用来自被摄体的光在图像形成平面上形成图像; 一个光圈单元，包括多个孔眼元件，设置成与多个像素块相关联，每个孔元件具有孔部分和屏蔽部分，来自图像形成透镜的光被每个孔元件过滤; 微透镜阵列，包括设置成与所述多个孔元件相关联的多个微透镜，所述微透镜中的每一个通过使用由相关孔径元件过滤的光在所述成像区域中形成图像; 以及信号处理电路，被配置为处理在成像区域中拍摄的图像的信号，并估计到被摄体的距离。