摘要:
A current source device having a plurality of current output circuits each including a current output FET, first and second switch FETs respectively series-connected to source and drain sides of the current output FET to form a series circuit, a source voltage supply which applies a positive-side potential of a source voltage to the first switch FET and applies a negative-side potential of the source voltage to the second switch FET to supply the source voltage to the series circuit, and an output terminal connected between the current output FET and the second switch FET; and a gate voltage supply circuit which supplies a common gate voltage to the gates of the current output FETs, wherein each of the current output circuits further includes a third switch FET provided between the current output FET and the second switch FET.
摘要:
In a quadrature amplitude modulation (QAM) communication system and corresponding method, and a QAM receiving apparatus and corresponding method, a sending apparatus that generates a sending signal adds CRC bits thereto. In a receiving apparatus, data rate is determined without a 16QAM demapping circuit and/or notification of the data rate, by 64QAM demapping a symbol string based on the received signal using a demapping circuit, independently of whether 16QAM or 64QAM was used on the sent signal. A bit string is thus obtained, and by thinning the bit string responsive to a CRC detection result of a CRC detection circuit, an output signal is provided using a thinning circuit.
摘要:
A gate array integrated circuit forming part of a semiconductor integrated circuit includes a basic layer of a unit cell in which a PMOS and an NMOS transistor are connected with a poly-silicon strip. The poly-silicon strip has gate terminal regions formed to laterally extend to allow two or more contact pads or through-holes to be disposed in each gate terminal region. It is thus possible to improve wiring efficiency and also micro-miniaturization and yield of the gate array integrated circuit. A layout method for a gate array integrated circuit is also provided.
摘要:
There is provided a tape carrier in which the degree of freedom of a fine wiring pattern is enhanced by reducing the diameter of a via pad so that the pitch of the wiring pattern can be made fine, and a metallic ball can be positively joined to the via pad even if the diameter of the metallic ball is extended to as large as possible. A tape carrier comprises: a metallic wiring 3 formed on one side of a tape base material 1 through an adhesive layer 2; and a plurality of via holes 4 formed on the other side of the tape base material 1, via pads 3b of the metallic wiring 3 being exposed to the plurality of via holes 4, wherein internal wall surfaces of the via holes, which have been formed by punching the tape material 5, on one side of which the adhesive layer 2 is formed, are subjected to coining-press from the other side of the tape base material 1, so that the via holes 4 are formed into tapered holes 7, the diameters of the opening portions 6 of which are extended.
摘要:
A semiconductor device has a semiconductor element mounted on inner leads of a TAB tape and first and second heat radiator elements having respective first and second peripheral flanges which cooperatively engage and thereby support the TAB tape in a sandwich manner therebetween, at least one heat radiator member having a central portion protruding toward and providing a support for the semiconductor element. A sealing resin fills the space between the heat radiator members and thereby integrally interconnects and hermetically seals interior surfaces of the leads of the TAB tape. A central portion of at least one of the heat radiator members protrudes toward and provides a support for the semiconductor element.
摘要:
A TAB tape or tape-like carrier used for an automatic bonding process when manufacturing high-frequency semiconductor devices has a plurality of electrically conductive circuit patterns on a flexible insulative film having a plurality of holes located in gaps between adjacent circuit pattterns. A ground layer is formed on a back surface of the insulative film, and electrically conductive layers or material are formed on inner peripherals walls of the holes or filled in the holes, so that the ground layer is electrically connected to the respective conductive layers or material.
摘要:
A transfer sheet includes an electrodeposited metal foil having a smooth surface and a rough surface attached to a heatproof flexible base sheet. Using such a transfer sheet, a circuit substrate is formed by etching the electrodeposited metal foil to form a circuit pattern, placing the transfer sheet into a cavity of a mold in such a manner that the rough surface of the circuit pattern faces an inside of the mold cavity, pouring a melting resin into the mold cavity to form a molded article, and peeling the transfer sheet from the molded article so that the circuit pattern remains on the resin base.