Magnetic random access memory with permanent photo-patternable low-k dielectric

    公开(公告)号:US10756138B2

    公开(公告)日:2020-08-25

    申请号:US16671990

    申请日:2019-11-01

    Inventor: Qinghuang Lin

    Abstract: A method of forming a device that includes encapsulating a magnetic resistive access memory (MRAM) stack with a first patternable low-k dielectric material that is patterned by an exposure to produce a via pattern that extends to circuitry to logic devices. The via pattern is developed forming a via opening. The method further includes forming a second patternable low-k dielectric material over first patternable low-k dielectric material and filling the via opening. The second patternable low-k dielectric material is patterned by a light exposure to produce a first line pattern to the MRAM stack and a second line pattern to the via opening. The first line pattern and the second line pattern are developed to form trench openings. Thereafter, electrically conductive material is formed in the trench openings and the via opening.

    MAGNETIC RANDOM ACCESS MEMORY WITH PERMANENT PHOTO-PATTERNABLE LOW-K DIELECTRIC

    公开(公告)号:US20190131346A1

    公开(公告)日:2019-05-02

    申请号:US15798816

    申请日:2017-10-31

    Inventor: Qinghuang Lin

    Abstract: A method of forming a device that includes encapsulating a magnetic resistive access memory (MRAM) stack with a first patternable low-k dielectric material that is patterned by a exposure to produce a via pattern that extends to circuitry to logic devices. The via pattern is developed forming a via opening. The method further includes forming a second patternable low-k dielectric material over first patternable low-k dielectric material and filling the via opening. The second patternable low-k dielectric material is patterned by a light exposure to produce a first line pattern to the MRAM stack and a second line pattern to the via opening. The first line pattern and the second line pattern are developed to form trench openings. Thereafter, electrically conductive material is formed in the trench openings and the via opening.

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