SOLID STATE THERMOELECTRIC COOLER IN SILICON BACKEND LAYERS FOR FAST COOLING IN TURBO SCENARIOS

    公开(公告)号:US20210125897A1

    公开(公告)日:2021-04-29

    申请号:US16665621

    申请日:2019-10-28

    Abstract: Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

    HYBRID TECHNOLOGY 3-D DIE STACKING
    37.
    发明申请

    公开(公告)号:US20200066640A1

    公开(公告)日:2020-02-27

    申请号:US15774512

    申请日:2015-12-26

    Abstract: Embodiments are generally directed to hybrid technology 3-D die stacking. An embodiment of an apparatus includes a TSV array substrate including through silicon vias (TSVs) and wire bond contacts; a stack of one or more wire bond dies; and a package coupled with the TSV substrate by a first interconnect, wherein the one or more wire bond dies are connected via one or more wires to one or more wire bond contacts of the TSV array substrate, and wherein the TSV array substrate provides connections to the for each of the one or more wire bond dies.

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