公开(公告)号：US10003016B2

公开(公告)日：2018-06-19

申请号：US15442954

申请日：2017-02-27

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01F10/32 ,  H01F41/32 ,  H01L43/02 ,  H01F10/14 ,  H01F10/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/32 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).

公开(公告)号：US20180166626A1

公开(公告)日：2018-06-14

申请号：US15892979

申请日：2018-02-09

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C19/08 ,  G11C11/16 ,  G11B5/33

CPC classification number: H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

公开(公告)号：US09941465B2

公开(公告)日：2018-04-10

申请号：US15229811

申请日：2016-08-05

Applicant: International Business Machines Corporation ,  Industrial Technology Research Institute

Inventor： Guohan Hu ,  Cheng-Wei Chien

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L43/12 ,  G11B5/33

CPC classification number: H01L43/08 ,  G11B5/33 ,  G11C11/161 ,  G11C19/0808 ,  G11C19/0841 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

公开(公告)号：US20170294482A1

公开(公告)日：2017-10-12

申请号：US15096864

申请日：2016-04-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS, CO., LTD.

Inventor： Guohan Hu ,  Younghyun Kim ,  Jeong-Heon Park ,  Daniel Worledge

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/226 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.

公开(公告)号：US20170287613A1

公开(公告)日：2017-10-05

申请号：US15629225

申请日：2017-06-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01F10/32 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01F10/329 ,  G11C11/161 ,  H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetoresistive random access memory devices include a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second magnetic layer formed on the tunnel barrier layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. The tunnel barrier layer includes a first barrier layer formed from a first material and a second barrier layer formed from a second material different from the first material, the second layer being present only in the second regions.

公开(公告)号：US20170159172A1

公开(公告)日：2017-06-08

申请号：US14958052

申请日：2015-12-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/06 ,  C23C18/31

CPC classification number: C23C16/06 ,  C23C14/024 ,  C23C14/14 ,  C23C16/0272 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/31 ,  C23C18/50

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

公开(公告)号：US09647204B2

公开(公告)日：2017-05-09

申请号：US14561690

申请日：2014-12-05

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Luqiao Liu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.

公开(公告)号：US09490422B1

公开(公告)日：2016-11-08

申请号：US14814129

申请日：2015-07-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01F10/329 ,  G11C11/161 ,  H01L27/222 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetoresistive random access memory (MRAM) devices and methods for making the same include growing a tunnel barrier layer on a first magnetic layer. A thin layer of non-wetting material is formed on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer. A second magnetic layer is grown on the tunnel barrier layer.

Abstract translation: 磁阻随机存取存储器（MRAM）器件及其制造方法包括在第一磁性层上生长隧道势垒层。 在隧道势垒层上形成一薄层非润湿材料，使得非润湿材料在隧道势垒层上形成不同的区域。 在隧道势垒层上生长第二磁性层。

公开(公告)号：US20240349620A1

公开(公告)日：2024-10-17

申请号：US18752170

申请日：2024-06-24

Applicant: International Business Machines Corporation

Inventor： Daniel Worledge ,  Guohan Hu

IPC: H10N50/80 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/329 ,  H10B61/00 ,  H10N50/85 ,  H01F41/34 ,  H10N50/01

Abstract: A magnetoresistive random access memory (MRAM) including spin-transfer torque (STT) MRAM is provided that has enhanced data retention. The enhanced data retention is provided by constructing a MTJ pillar having a temperature-independent Delta, where Delta is Delta=Eb/kt, wherein Eb is the activation energy, k is the Boltzmann's constant, and T is the absolute temperature. Notably, the present application provides a way for EB to actually increase with temperature, which can cancel the effect of the term KT, resulting in a temperature independent Delta.

公开(公告)号：US20240334837A1

公开(公告)日：2024-10-03

申请号：US18129219

申请日：2023-03-31

Applicant: International Business Machines Corporation

Inventor： MATTHIAS GEORG GOTTWALD ,  Guohan Hu ,  John Bruley ,  Alexander Reznicek

IPC: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/10 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetic tunnel junction (MTJ) stack structure includes a reference layer; a tunnel barrier; and a free layer that comprises three distinct materials. All of the three distinct materials in the free layer are magnetic material. One of the three distinct materials in the free layer is a C38 structure alloy.