公开(公告)号：US07072153B2

公开(公告)日：2006-07-04

申请号：US10400638

申请日：2003-03-28

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US20060067017A1

公开(公告)日：2006-03-30

申请号：US11282659

申请日：2005-11-21

申请人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/305

摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.

摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括磁阻效应膜，其中由含有导电载体的材料制成的电阻调节层不大于10/22/3 / >被插入。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。

公开(公告)号：US20050047028A1

公开(公告)日：2005-03-03

申请号：US10958250

申请日：2004-10-06

申请人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  G11B5/127

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121

摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

公开(公告)号：US20050030676A1

公开(公告)日：2005-02-10

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US06853520B2

公开(公告)日：2005-02-08

申请号：US09944075

申请日：2001-09-04

申请人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Katsuhiko Koi ,  Hiromi Fuke ,  Hiroshi Tomita ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32

CPC分类号： H01F10/3272 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  Y10T428/1114 ,  Y10T428/1121

摘要： There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

摘要翻译： 提供了具有高灵敏度和高可靠性的磁阻效应元件，磁头，磁头组件和磁记录系统。 磁阻效应元件具有两个铁磁层，设置在铁磁层之间的非磁性层和包含以氧化物或氮化物为主要成分的层，其中以氧化物或氮化物为主要成分的层含有磁性过渡金属 元素，其不结合氧和氮并且是Co，Fe和Ni中的至少一种。

公开(公告)号：US06395388B1

公开(公告)日：2002-05-28

申请号：US09442032

申请日：1999-11-17

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  E05B17/2007 ,  E05B67/36 ,  E05C1/04 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10 ,  Y10S428/90 ,  Y10T70/498 ,  Y10T70/5319 ,  Y10T292/1025 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/26 ,  Y10T428/265

摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

摘要翻译： 本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜， 在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件 以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

公开(公告)号：US06305072B1

公开(公告)日：2001-10-23

申请号：US08979965

申请日：1997-11-26

申请人： Hiroaki Yoda ,  Susumu Hashimoto ,  Michiko Hara ,  Masashi Sahashi

发明人： Hiroaki Yoda ,  Susumu Hashimoto ,  Michiko Hara ,  Masashi Sahashi

IPC分类号： G11B542

CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： When manufacturing a thin film magnetic head in which an upper magnetic pole is formed on a lower magnetic pole through a magnetic gap, firstly, at least on the lower magnetic pole, a convex portion possessing the width equivalent to a track width is formed. The convex portion forms a lower magnetic pole tip. Conforming to a contour of the convex shape of the lower magnetic pole, a non-magnetic material layer is formed. A flattening layer is formed on the non-magnetic material layer. The non-magnetic layer is etched with the flattening layer, for example, as a mask. In the non-magnetic material layer, a concave portion self-aligned to the lower portion magnetic pole top (convex portion) is formed. Inside the concave portion, a magnetic layer (upper magnetic pole tip) destined to be a part of the upper magnetic pole is formed. As to the lower magnetic pole tip and the upper magnetic pole tip, the widths of surfaces opposite to the magnetic gap are almost equal, and the central positions thereof almost overlap each other. Thus, a narrow track head structure with high accuracy can be obtained.

摘要翻译： 当通过磁隙制造在下磁极上形成上磁极的薄膜磁头时，首先至少在下磁极上形成具有与磁道宽度相等的宽度的凸部。 凸部形成下磁极末端。 符合下磁极的凸形轮廓，形成非磁性材料层。 在非磁性材料层上形成平坦化层。 用平坦化层，例如作为掩模蚀刻非磁性层。 在非磁性材料层中，形成与下部磁极顶部（凸部）自对准的凹部。 在凹部内部形成着作为上磁极的一部分的磁性层（上磁极端）。 对于下磁极尖端和上磁极尖端，与磁隙相反的表面的宽度几乎相等，并且其中心位置几乎彼此重叠。 因此，可以获得高精度的窄轨道头结构。

公开(公告)号：US6064552A

公开(公告)日：2000-05-16

申请号：US42696

申请日：1998-03-17

申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Yoda

发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Yoda

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3925 ,  G11B5/3948 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996 ,  G11B5/3156 ,  G11B5/3183

摘要： A magnetoresistive head comprising, a magnetic yoke defining a magnetic gap for guiding signal magnetic fields from a recording medium at the air-bearing surface, a giant magnetoresistive element magnetically coupled with the magnetic yoke at a position remote from the air-bearing surface, and means for supplying a sense current in a direction substantially perpendicular to the surface of the giant magnetoresistive element.

摘要翻译： 一种磁阻头，包括：限定用于引导来自空气轴承表面的记录介质的信号磁场的磁隙的磁轭;在远离空气轴承表面的位置处与磁轭磁耦合的巨磁阻元件，以及 用于在基本垂直于巨磁阻元件的表面的方向上提供感测电流的装置。

公开(公告)号：US5756191A

公开(公告)日：1998-05-26

申请号：US785318

申请日：1997-01-21

申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/10 ,  B32B9/00

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/24917

摘要： An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.

摘要翻译： 一种交换耦合膜，包括第一反铁磁膜，形成为叠置在第一反铁磁膜上的铁磁膜和形成在第一反铁磁膜和铁磁膜之间的界面中的第二反铁磁膜，其特征在于，第一反铁磁膜具有 晶体结构选自正方晶，体心立方和NaCl型，γ相M-Mn合金的第二反铁磁膜具有面心立方晶体结构，其中M代表至少一种选自 由Fe，Co和Ni组成的组。

公开(公告)号：US5738946A

公开(公告)日：1998-04-14

申请号：US652784

申请日：1996-05-23

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magneto-resistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

摘要翻译： 本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件，其包括：通过依次层叠含有选自Co，Fe和Ni中的至少一种元素作为其主要成分的铁磁性膜，形成在基板上的非磁性膜， 和铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。