公开(公告)号：US07578886B2

公开(公告)日：2009-08-25

申请号：US10564980

申请日：2004-07-28

申请人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

发明人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

IPC分类号： B08B5/04

CPC分类号： H01L21/02052 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0229 ,  B08B2203/0288 ,  C23C18/1628 ,  C25D17/001 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

摘要： A substrate processing apparatus and a substrate processing method is provided for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. A substrate holding apparatus is provided for holding and rotating a substrate. The substrate processing apparatus for processing a substrate while supplying a fluid to the substrate includes a substrate holder for holding and rotating the substrate, and a holder suction unit for sucking the fluid from the substrate holder. The substrate holding apparatus includes a plurality of rollers which are brought into contact with an edge portion of a substrate so as to hold and rotate the substrate, and at least one moving mechanism for moving the rollers.

摘要翻译： 提供了一种基板处理装置和基板处理方法，用于在旋转诸如半导体晶片或液晶基板的基板的同时进行化学液体处理，清洁处理，干燥处理等。 提供用于保持和旋转衬底的衬底保持装置。 用于在向衬底供应流体的同时处理衬底的衬底处理设备包括用于保持和旋转衬底的衬底保持器，以及用于从衬底保持器吸取流体的保持器抽吸单元。 基板保持装置包括与基板的边缘部分接触以便​​保持和旋转基板的多个辊以及用于移动辊的至少一个移动机构。

公开(公告)号：US08573041B2

公开(公告)日：2013-11-05

申请号：US13314591

申请日：2011-12-08

申请人： Takayuki Saito ,  Takayuki Yogo ,  Shinya Igarashi ,  Hiromu Kikawa

发明人： Takayuki Saito ,  Takayuki Yogo ,  Shinya Igarashi ,  Hiromu Kikawa

IPC分类号： G01M15/04

CPC分类号： G01F1/6842 ,  G01F5/00 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An arrangement of a mass intake air flow measurement device suitable for integrating a humidity sensing device as well as a temperature sensing device and a pressure sensing device is provided. A second bypass passage 501 bypassing a bypass passage 205 is formed and a humidity sensing device 500 is mounted in the second bypass passage 501. A second bypass passage inlet 502 and a second bypass passage outlet 503 formed in a wall surface of the bypass passage 205 are opened parallel to the direction of flow of air flowing in the bypass passage 205.

摘要翻译： 提供了一种适合于集成湿度感测装置以及温度感测装置和压力感测装置的大量进气流量测量装置的布置。 形成旁通旁路通路205的第二旁路通路501，在第二旁路通路501中安装湿度检测装置500.形成在旁通路205的壁面的第二旁路通路入口502和第二旁路通路出口503 平行于在旁路通路205中流动的空气的流动方向开口。

公开(公告)号：US08549901B2

公开(公告)日：2013-10-08

申请号：US13367939

申请日：2012-02-07

申请人： Takayuki Saito ,  Keiji Hanzawa ,  Takayuki Yogo

发明人： Takayuki Saito ,  Keiji Hanzawa ,  Takayuki Yogo

IPC分类号： G01M15/04

CPC分类号： G01F1/6842 ,  F02D41/187 ,  G01F5/00

摘要： In relation to a humidity sensor sensitive to water and contamination, a sensor implementation structure that achieves both protection performance against water and contaminants and measurement performance such as humidity responsiveness is provided. A sensor structure has a mass airflow measurement element that measures a mass airflow flowing in an intake pipe, a humidity sensing element that senses humidity of air flowing in the intake pipe, a housing structural component having a connector that carries out input/output to/from outside and a terminal component of the connector, and a bypass passage that is composed by using part of the housing structural component and takes in part of the air that flows in the intake pipe, the mass airflow measurement element being mounted in the bypass passage; wherein space is provided in the housing structural component in the vicinity of the bypass passage, the humidity sensing element is mounted in the space.

摘要翻译： 关于对水和污染物敏感的湿度传感器，提供了实现对水和污染物的保护性能以及诸如湿度响应性的测量性能的传感器实施结构。 传感器结构具有测量进气管中流动的质量气流的质量气流测量元件，感测进气管中流动的空气湿度的湿度感测元件，具有连接器的壳体结构部件，该连接器将输入/ 从连接器的外部和端子部件和旁通通路构成，所述旁通通路由使用所述壳体结构部件的一部分而占据所述进气管中流动的一部分空气，所述质量空气流量测量元件安装在所述旁路通路 ; 其中在所述外壳结构部件中在所述旁通通路附近设置空间，所述湿度感测元件安装在所述空间中。

公开(公告)号：US20120155101A1

公开(公告)日：2012-06-21

申请号：US13394100

申请日：2010-08-25

申请人： Akihiro Matsumoto ,  Tetsuya Suzuki ,  Tomoyuki Nakagawa ,  Akitaka Kanamori ,  Takayuki Saito ,  Kaname Miyagishima ,  Hiroki Fujimura

发明人： Akihiro Matsumoto ,  Tetsuya Suzuki ,  Tomoyuki Nakagawa ,  Akitaka Kanamori ,  Takayuki Saito ,  Kaname Miyagishima ,  Hiroki Fujimura

IPC分类号： B60Q1/00 ,  F21V21/00

CPC分类号： F21S45/47 ,  B60Q1/0094 ,  F21S41/141 ,  F21S41/147 ,  F21S41/19 ,  F21S41/192 ,  F21V29/004 ,  F21V29/70 ,  F21V29/763 ,  F21Y2115/10 ,  H01L33/58 ,  H01L33/60 ,  H01L33/644 ,  H01L2224/32013 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting apparatus is provided with: a light-emitting module; a control circuit unit configured to control the lighting of the light-emitting module; a heat-radiating substrate configured to support the light-emitting module and the control circuit unit in such a manner as to recover the heat produced by the light-emitting module and the control circuit unit; and a connection support unit mounted on the heat-radiating substrate in such a state as to support an electrically conductive member by which to electrically connect the light-emitting module and the control circuit unit.

摘要翻译： 发光装置具有：发光模块; 被配置为控制所述发光模块的点亮的控制电路单元; 散热基板，被配置为支撑发光模块和控制电路单元，以回收由发光模块和控制电路单元产生的热量; 以及安装在散热基板上的连接支撑单元，其状态为支撑用于电连接发光模块和控制电路单元的导电构件。

公开(公告)号：USD644855S1

公开(公告)日：2011-09-13

申请号：US29357684

申请日：2010-03-16

申请人： Takayuki Saito

设计人： Takayuki Saito

公开(公告)号：US20100231923A1

公开(公告)日：2010-09-16

申请号：US12721084

申请日：2010-03-10

申请人： Zongtao GE ,  Masaaki Tomimizu ,  Hideo Kanda ,  Takayuki Saito ,  Noboru Koizumi ,  Seiji Mochitate ,  Shigeyuki Takano ,  Hiroyuki Iwazaki

发明人： Zongtao GE ,  Masaaki Tomimizu ,  Hideo Kanda ,  Takayuki Saito ,  Noboru Koizumi ,  Seiji Mochitate ,  Shigeyuki Takano ,  Hiroyuki Iwazaki

IPC分类号： G01B11/25

CPC分类号： G01B11/2441 ,  G01M11/0221 ,  G01M11/025 ,  G01M11/0271

摘要： A process of measuring a shape while changing the relative posture of an microscopic interferometer to a sample lens which is rotated about a rotation axis is divided into a process of measuring a top surface in a state where the sample lens is supported from a back surface and a process of measuring a back surface in a state where the sample lens is supported from the top surface. By combining first shape information of a flange side surface acquired by the process of measuring the top surface and second shape information of the flange side surface acquired by the process of measuring the back surface, the relative positional relation between the sample top surface and the sample back surface is calculated.

摘要翻译： 在将微型干涉仪相对于相对于旋转轴线旋转的样本透镜的相对姿势变化的同时测量形状的处理被划分为从背面支撑样本透镜的状态下测量顶面的处理， 在从上表面支撑样本透镜的状态下测量背面的处理。 通过组合通过测量上表面获得的凸缘侧表面的第一形状信息和通过测量背面的处理获得的凸缘侧表面的第二形状信息，样本顶表面和样本之间的相对位置关系 计算背面。

公开(公告)号：US07459265B2

公开(公告)日：2008-12-02

申请号：US11255877

申请日：2005-10-24

申请人： Takeo Ishibashi ,  Takayuki Saito ,  Maya Itoh ,  Shuji Nakao

发明人： Takeo Ishibashi ,  Takayuki Saito ,  Maya Itoh ,  Shuji Nakao

IPC分类号： G03F7/00

CPC分类号： G03F7/70466 ,  G03F1/00

摘要： First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region.

摘要翻译： 首先，使用仅具有光栅图案形成区域的偶极照明作为要暴露的实质对象来执行第一曝光处理。 接下来，仅以标准图案形成区域作为要曝光的实质物体进行第二曝光处理。 然后进行显影处理以获得抗蚀剂图案。 用于第一曝光处理的掩模使得在对应于标准图案形成区域的标准图案掩模部件的整个表面上形成遮光图案。 用于第二曝光的掩模使得在对应于光栅图案形成区域的光栅图案掩模部分的整个表面上形成遮光图案。

公开(公告)号：US06686751B1

公开(公告)日：2004-02-03

申请号：US09926195

申请日：2001-09-21

申请人： Takayuki Saito ,  Syu Nakanishi ,  Kanroku Chounan

发明人： Takayuki Saito ,  Syu Nakanishi ,  Kanroku Chounan

IPC分类号： G01N2706

CPC分类号： G01N27/06 ,  G01N33/182

摘要： The present invention provide a method and an apparatus for detecting anions in water which does not require replacement of ion exchange resins and the like and can perform precise measurement at low cost in a simple operation. The apparatus for detecting anions in water according to the present invention is an apparatus for detecting anions in water with the use of an electric conductivity cell and is constituted by an electrolyzer having an anode chamber having an anode plate and a cation chamber having a cathode plate via a cation exchange membrane, a direct-current power unit for applying a direct-current voltage between the anode and the cathode of the electrolyzer and an electric conductivity cell for measuring the electric conductivity of a sample water, and a flow passage for introducing a sample water into the anode chamber and a treated water flow passage for discharging the treated water which has been subjected to electrolytic treatment in the anode chamber which are connected to the anode chamber, respectively, and the treated water flow passage being connected to the cathode chamber via an electric conductivity cell.

摘要翻译： 本发明提供一种用于检测水中阴离子的方法和装置，其不需要更换离子交换树脂等，并且可以在简单的操作中以低成本执行精确的测量。 根据本发明的用于检测水中阴离子的装置是一种使用电导电池检测水中阴离子的装置，由具有阳极室和阳极室的电解槽构成，阳极室具有阴极板 通过阳离子交换膜，用于在电解槽的阳极和阴极之间施加直流电压的直流电力单元和用于测量样品水的电导率的电导池，以及用于引入 将水进入阳极室和经处理的水流通道，用于分别在与阳极室连接的阳极室中排出经过电解处理的处理水，处理过的水流通道连接到阴极室 通过电导电池。

公开(公告)号：US06423205B1

公开(公告)日：2002-07-23

申请号：US09646958

申请日：2000-10-27

申请人： Masaji Akahori ,  Takayoshi Kawamoto ,  Syu Nakanishi ,  Shinzi Miura ,  Toru Akiyama ,  Takayuki Saito ,  Kunio Fujiwara ,  Satoshi Konishi

发明人： Masaji Akahori ,  Takayoshi Kawamoto ,  Syu Nakanishi ,  Shinzi Miura ,  Toru Akiyama ,  Takayuki Saito ,  Kunio Fujiwara ,  Satoshi Konishi

IPC分类号： C02F140

CPC分类号： C02F1/4695 ,  B01D61/48 ,  B01J47/08 ,  C02F2201/46115 ,  C02F2201/46185 ,  Y02A20/134

摘要： The object of this invention is to provide an electrical deionization apparatus with which various feed water types ranging from water of high ion concentration to water of low ion concentration can be consistently deionized with high efficiency. At least part of cation-exchange membranes and anion-exchange membranes alternate between electrodes to form an alternating array of deionization and concentration compartments and the deionization compartment contains a woven or non-woven fabric made of cation-exchange fiber that is placed on the cation-exchange membrane side in a face-to-face relationship with a woven or non-woven fabric made of anion-exchange fiber that is placed on the anion-exchange membrane side, with the passageway of feed water between the two woven or non-woven fabrics containing an ion-conducting spacer provided with an ion-exchanging capability.

摘要翻译： 本发明的目的是提供一种电去离子装置，其具有从高离子浓度的水到低离子浓度的水的各种给水类型能够以高效率一致地去离子。 阳离子交换膜和阴离子交换膜的至少一部分在电极之间交替形成去离子和浓缩隔室的交替排列，去离子室包含由放置在阳离子上的阳离子交换纤维制成的织造或非织造织物 - 与由阴离子交换纤维制成的织造或非织造织物的面对面关系的交换膜侧，所述织物或非织造织物放置在阴离子交换膜侧，进料水在两个织造或非织造织物之间的通道， 含有具有离子交换能力的离子导电间隔物的无纺织物。

公开(公告)号：US06251774B1

公开(公告)日：2001-06-26

申请号：US09300848

申请日：1999-04-28

申请人： Akihiko Harada ,  Takayuki Saito

发明人： Akihiko Harada ,  Takayuki Saito

IPC分类号： H01L21314

CPC分类号： H01L21/76834 ,  H01L21/3145 ,  H01L21/76808

摘要： There is described a method of manufacturing a semiconductor device for the purpose of preventing damage to a lower wiring layer, wherein wiring elements of dual damascene structure are formed on the lower wiring layer. Under the method, a first silicon nitride film, a first silicon oxide film, a second silicon nitride film, and a second silicon oxide film are formed, in this sequence, on a lower wiring layer. A via hole is formed at a position above the lower wiring layer so as to pass through the second silicon oxide film and the second silicon nitride film. A photoresist is embedded into the via hole so as to cover the internal wall surface thereof. After formation of a protective film from the photoresist, predetermined portions of the second silicon oxide film and the second silicon nitride film are removed, thus forming a wiring trench.

摘要翻译： 描述了一种制造半导体器件的方法，其目的是防止对下布线层的损坏，其中双镶嵌结构的布线元件形成在下布线层上。 在该方法下，在下布线层上依次形成第一氮化硅膜，第一氧化硅膜，第二氮化硅膜和第二氧化硅膜。 在下布线层的上方形成通孔，以通过第二氧化硅膜和第二氮化硅膜。 将光致抗蚀剂嵌入到通孔中以覆盖其内壁表面。 在从光致抗蚀剂形成保护膜之后，去除第二氧化硅膜和第二氮化硅膜的预定部分，从而形成布线沟槽。