公开(公告)号：US4780472A

公开(公告)日：1988-10-25

申请号：US117887

申请日：1987-11-02

申请人： Kouichiro Ueda ,  Satoru Tanaka ,  Toshinobu Kunii ,  Kengo Kagei ,  Tadashi Sato ,  Hideki Ono ,  Issei Ohtsuka ,  Mayumi Kawase ,  Toshiharu Ohgoh ,  Tsuneo Wakabayashi

发明人： Kouichiro Ueda ,  Satoru Tanaka ,  Toshinobu Kunii ,  Kengo Kagei ,  Tadashi Sato ,  Hideki Ono ,  Issei Ohtsuka ,  Mayumi Kawase ,  Toshiharu Ohgoh ,  Tsuneo Wakabayashi

IPC分类号： A61K31/415 ,  A61P3/08 ,  A61P3/10 ,  A61P9/10 ,  A61P25/02 ,  A61P27/02 ,  A61P27/12 ,  C07D233/72 ,  C07D491/107 ,  C07D493/10 ,  C07D495/10

CPC分类号： C07D493/10 ,  C07D495/10

摘要： Hydantoin derivatives and salts thereof, the process for the preparation thereof, and medicines containing the same, wherein the hydantoin derivatives are represented by the general formula: ##STR1## wherein the substituents are defined hereinbelow. The hydantoin derivatives and salts thereof have excellent effects for the treamtment of the complications of the diabetes mellitus.

摘要翻译： 乙内酰脲衍生物及其盐，其制备方法和含有其的药物，其中乙内酰脲衍生物由以下通式表示：其中取代基在下文定义。 乙内酰脲衍生物及其盐对糖尿病并发症的改善具有优异的效果。

公开(公告)号：US09683557B2

公开(公告)日：2017-06-20

申请号：US14002145

申请日：2011-03-07

申请人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

发明人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

IPC分类号： F24J2/07 ,  F03G6/06 ,  F03G6/00 ,  F01K3/16 ,  F01K3/18 ,  F24J2/34 ,  F01K3/00

CPC分类号： F03G6/003 ,  F01K3/004 ,  F01K3/16 ,  F01K3/18 ,  F03G6/00 ,  F03G6/005 ,  F03G6/065 ,  F03G6/067 ,  F24S20/20 ,  F24S60/00 ,  Y02E10/44 ,  Y02E10/46

摘要： An object of the present invention is to provide a solar heat steam cycle system capable of operating efficiently and stably in keeping with the status of collected or stored heat, and a control method for use with the system.The system includes a heat collector (1) which collects solar thermal energy, a thermal storage device (2) which stores the solar thermal energy collected by the heat collector, a feed water heater (3) which heats feed water, an evaporator (4) which evaporates the feed water supplied from the feed water heater, and a steam turbine (6) driven by steam generated by the evaporator. The system includes a control valve (31) which controls allocations of heating medium supplied from the thermal storage device to the evaporator and the feed water heater.

公开(公告)号：US09283552B2

公开(公告)日：2016-03-15

申请号：US13391727

申请日：2010-08-30

申请人： Kazuaki Hayasaka ,  Hideki Ono ,  Akira Koyama ,  Hideshi Iki

发明人： Kazuaki Hayasaka ,  Hideki Ono ,  Akira Koyama ,  Hideshi Iki

IPC分类号： C07C1/00 ,  B01J29/74 ,  B01J23/883 ,  C10G3/00 ,  C10G45/64 ,  C10L1/04 ,  B01J23/85 ,  B01J29/85

CPC分类号： B01J29/7484 ,  B01J23/85 ,  B01J23/883 ,  B01J29/7461 ,  B01J29/7492 ,  B01J29/85 ,  C10G3/46 ,  C10G3/49 ,  C10G3/50 ,  C10G45/64 ,  C10G2300/1014 ,  C10G2300/1018 ,  C10G2300/202 ,  C10G2400/08 ,  C10L1/04 ,  Y02P30/20

摘要： A method for producing an aviation fuel oil base, including: a first step of obtaining a first generated oil by hydrotreating a feedstock by bringing a feedstock which includes an oxygen-containing hydrocarbon compound derived from an animal or vegetable oils and fat into contact with a first dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of group 6B of the periodic table, a metal of group 8, and an amorphous solid acidic substance, in the presence of hydrogen; and a second step of obtaining a second generated oil including an aviation fuel oil base by hydroisomerizing the first generated oil by bringing the first generated oil into contact with a second dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of the group 8 of the periodic table and a crystalline solid acidic substance, in the presence of hydrogen.

摘要翻译： 一种生产航空燃料油基料的方法，包括：第一步骤，通过将包含来源于动物或植物油脂的含氧烃化合物的原料与一种原料接触而将原料加氢处理获得第一产生的油 具有脱氢和氢化功能的第一双官能催化剂，其包含周期表第6B族金属，第8族金属和无定形固体酸性物质，在氢的存在下; 以及第二步骤，通过使第一产生的油与具有脱氢和氢化功能的第二双功能催化剂接触，并且包括该组的金属，获得包含航空燃料油基的第二产生的油， 8和结晶固体酸性物质，在氢的存在下。

公开(公告)号：US20130008827A1

公开(公告)日：2013-01-10

申请号：US13636182

申请日：2011-03-24

申请人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono ,  Takaya Matsumoto

发明人： Yoshiyuki Nagayasu ,  Kazuaki Hayasaka ,  Hideki Ono ,  Takaya Matsumoto

IPC分类号： B01J29/74 ,  C10G49/00 ,  C10G65/02

CPC分类号： C10G45/64 ,  B01J29/7461 ,  B01J29/7484 ,  B01J29/7492 ,  B01J29/7661 ,  B01J29/7684 ,  B01J29/7692 ,  B01J29/7861 ,  B01J29/7884 ,  B01J29/7892 ,  B01J37/0009 ,  B01J37/0201 ,  B01J37/18 ,  B01J37/30 ,  B01J2229/20 ,  B01J2229/42 ,  C07C5/2708 ,  C07C5/2775 ,  C10G45/62 ,  C10G65/043 ,  C10G2300/1022 ,  C10G2300/107 ,  C10G2300/1074 ,  C10G2300/1077 ,  C10G2300/1081 ,  C10G2300/30 ,  C10G2300/70 ,  C10G2400/10

摘要： The hydroisomerization catalyst of the present invention is a catalyst used for hydroisomerization of a hydrocarbon, including a support including a calcined zeolite modified with at least one metal selected from the group consisting of Na, K, Cs, Mg, Ca, Ba, and K, and having a thermal history that includes heating at 350° C. or more, and at least one inorganic oxide selected from the group consisting of alumina, silica, titania, boria, zirconia, magnesia, ceria, zinc oxide, phosphorus oxide, and a composite oxide containing a combination of at least two or more of these oxides; and at least one metal supported on the support and selected from the group consisting of elements belonging to Groups 8 to 10 of the periodic table, molybdenum and tungsten.

摘要翻译： 本发明的加氢异构化催化剂是用于烃的加氢异构化的催化剂，包括含有由选自Na，K，Cs，Mg，Ca，Ba和K中的至少一种金属改性的煅烧沸石的载体 并且具有包括在350℃以上的加热的热历史，以及选自氧化铝，二氧化硅，二氧化钛，氧化硼，氧化锆，氧化镁，二氧化铈，氧化锌，氧化磷和氧化铝中的至少一种无机氧化物 包含这些氧化物中的至少两种以上的组合的复合氧化物; 以及至少一种负载在载体上并选自元素周期表第8至10族的元素，钼和钨的金属。

公开(公告)号：US20120292758A1

公开(公告)日：2012-11-22

申请号：US13465748

申请日：2012-05-07

申请人： Hideki Ono

发明人： Hideki Ono

IPC分类号： H01L23/48

CPC分类号： H01L51/0545 ,  H01L51/0018 ,  H01L51/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor element including an organic semiconductor layer and a layer disposed on the upper surface of the organic semiconductor layer, wherein the outline of the layer is inside the outline of the organic semiconductor layer.

摘要翻译： 一种半导体元件，包括有机半导体层和设置在有机半导体层的上表面上的层，其中该层的轮廓在有机半导体层的轮廓内。

公开(公告)号：US08258514B2

公开(公告)日：2012-09-04

申请号：US12913912

申请日：2010-10-28

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L33/16

CPC分类号： H01L51/102 ,  H01L27/283 ,  H01L51/0023 ,  H01L51/0545

摘要： Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.

摘要翻译： 这里公开了采用薄膜晶体管的半导体器件。 此外，半导体器件具有栅电极，栅极绝缘膜，有机半导体层，结构，源电极，漏电极和电极材料层。

公开(公告)号：US08226921B2

公开(公告)日：2012-07-24

申请号：US13158008

申请日：2011-06-10

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

IPC分类号： C01B31/00 ,  C01B31/04 ,  C01B57/04 ,  C01B53/00 ,  H01G4/00 ,  H01G9/00 ,  C01G1/00 ,  C01G17/00 ,  C01C3/00

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/30 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

公开(公告)号：US08148238B2

公开(公告)日：2012-04-03

申请号：US12379827

申请日：2009-03-03

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/30

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

公开(公告)号：US20090268375A1

公开(公告)日：2009-10-29

申请号：US12158165

申请日：2006-12-27

申请人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

发明人： Takashi Oyama ,  Kazuhisa Nakanishi ,  Tamotsu Tano ,  Keiji Higashi ,  Ippei Fujinaga ,  Hiromitsu Hashisaka ,  Toshitaka Fujii ,  Takashi Noro ,  Akio Sakamoto ,  Kiwamu Takeshita ,  Keizou Ikai ,  Masaki Fujii ,  Hideki Ono

IPC分类号： C10G11/00 ,  C10L1/00 ,  H01G9/00

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/30 ,  C10B57/045 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw coke having such a structure that the graphitized product resulting from graphitization of the raw coke at a temperature of 2800° C. under an inactive gas atmosphere will have ratios of the crystallite size to the lattice constant of 360 or less in the (002) plane and 1500 or less in the (110) plane, as a raw coke providing active carbon produced by alkali-activating the raw coke, which is reduced in remaining alkali content and can simplify washing operation because washing liquid can easily pass through the activated carbon, or as a raw coke for the production of needle coke.

摘要翻译： 本发明提供一种具有这样一种结构的原焦炭，即在惰性气体气氛下，在2800℃的温度下由原焦炭石墨化产生的石墨化产物将使微晶尺寸与晶格常数之比为360以下 在（002）面中，在（110）面中为1500以下的原料焦炭，作为提供通过碱活化生焦炭生成的活性炭的原焦炭，其还原了剩余的碱含量，并且可以简化洗涤操作，因为洗涤液容易 通过活性炭，或作为用于生产针状焦的原焦炭。

公开(公告)号：US20050127398A1

公开(公告)日：2005-06-16

申请号：US11038255

申请日：2005-01-21

申请人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

发明人： Satoshi Taniguchi ,  Toshikazu Suzuki ,  Hideki Ono ,  Jun Araseki

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8234 ,  H01L29/20 ,  H01L29/423 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872 ,  H01L31/0328 ,  H01L31/072

CPC分类号： H01L29/66462 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： A method for making a filed-effect semiconductor device includes the steps of forming a gate electrode on a semiconductor layer composed of a gallium nitride-based compound semiconductor represented by the formula AlxInyGa1−x−yN, wherein x+y=1, 0≦x≦1, and 0≦y≦1; and forming a source electrode and a drain electrode by self-alignment using the gate electrode as a mask. A field-effect semiconductor device fabricated by the method is also disclosed.

摘要翻译： 一种场效应半导体器件的制造方法包括以下步骤：在由式Al x Y y表示的基于氮化镓的化合物半导体构成的半导体层上形成栅电极， 其中x + y = 1,0 <= x <= 1，0 <= y <= 1; 并且使用栅电极作为掩模，通过自对准形成源电极和漏电极。 还公开了通过该方法制造的场效应半导体器件。