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    DISPLAY DEVICE
    31.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20200006568A1

    公开(公告)日：2020-01-02

    申请号：US16565760

    申请日：2019-09-10

    Applicant: Japan Display Inc.

    Inventor： Yohei YAMAGUCHI ,  Isao SUZUMURA

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L27/146 ,  H01L29/423

    Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20170012134A1

    公开(公告)日：2017-01-12

    申请号：US15189279

    申请日：2016-06-22

    Applicant: Japan Display Inc.

    Inventor： Toshinari SASAKI ,  Isao SUZUMURA

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/417

    CPC classification number: H01L29/7869 ,  H01L21/47635 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66969

    Abstract: A manufacturing method of a semiconductor device includes forming an oxide semiconductor layer on an insulating layer, a part of the insulating layer being exposed from the oxide semiconductor layer, performing a plasma process by use of chlorine-containing gas on the part of the insulating layer exposed from the oxide semiconductor layer, and removing chlorine impurities from a surface layer of the exposed part of the insulating layer. The chlorine impurities may be removed by a first etching process performed by use of fluorine-containing gas. The fluorine-containing gas may contain CF4 and CHF3. The plasma process may be a second etching process performed by use of chlorine-containing gas.

    Abstract translation: 半导体器件的制造方法包括在绝缘层上形成氧化物半导体层，绝缘层的一部分从氧化物半导体层露出，在绝缘层的一部分使用含氯气体进行等离子体处理 从氧化物半导体层露出，并从绝缘层的暴露部分的表面层去除氯杂质。 可以通过使用含氟气体进行的第一蚀刻工艺除去氯杂质。 含氟气体可以含有CF 4和CHF 3。 等离子体处理可以是通过使用含氯气体进行的第二蚀刻工艺。

    LIQUID CRYSTAL DISPLAY PANEL
    34.
    发明申请
    LIQUID CRYSTAL DISPLAY PANEL 有权
    液晶显示面板

    公开(公告)号：US20150070641A1

    公开(公告)日：2015-03-12

    申请号：US14480804

    申请日：2014-09-09

    Applicant: Japan Display Inc.

    Inventor： Norihiro UEMURA ,  Hidekazu MIYAKE ,  Isao SUZUMURA ,  Yohei YAMAGUCHI ,  Toshiki KANEKO

    IPC: G02F1/1337 ,  G02F1/1362 ,  G02F1/1368

    CPC classification number: G02F1/133788 ,  G02F1/136209 ,  G02F2001/133388

    Abstract: To maintain good operation of a peripheral circuit using an oxide thin film transistor in a liquid crystal display panel to which photo alignment is applied, the liquid crystal display panel includes: a transparent substrate provided with an oxide thin film transistor in the periphery of a pixel portion in which pixel electrodes are arranged, to control the pixel electrodes; and an alignment film to align liquid crystal provided in the pixel portion. The alignment film is subjected to photo alignment treatment by ultraviolet irradiation. Further, an ultraviolet absorbing layer is provided so as to cover the oxide thin film transistor. For example, an alignment film is used for the ultraviolet absorbing layer to absorb the ultraviolet light for the photo aliment treatment of the alignment film, in the peripheral circuit portion for controlling the pixel electrodes, thereby preventing the threshold voltage of the oxide thin film transistor from shifting.

    Abstract translation: 为了在使用光取向的液晶显示面板中使用氧化物薄膜晶体管来维持外围电路的良好的操作，液晶显示面板包括：透明基板，在像素的周边设置有氧化物薄膜晶体管 配置像素电极的部分，以控制像素电极; 以及用于对准设置在像素部分中的液晶的取向膜。 通过紫外线照射对取向膜进行光取向处理。 此外，设置紫外线吸收层以覆盖氧化物薄膜晶体管。 例如，在用于控制像素电极的外围电路部分中，使用取向膜用于紫外线吸收层吸收用于对准膜的光电解处理的紫外光，从而防止氧化物薄膜晶体管的阈值电压 从转移。

    DISPLAY DEVICE
    35.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20250048741A1

    公开(公告)日：2025-02-06

    申请号：US18921200

    申请日：2024-10-21

    Applicant: Japan Display Inc.

    Inventor： Isao SUZUMURA

    IPC: H01L27/12 ,  G02F1/1368 ,  H01L21/426 ,  H01L29/40 ,  H01L29/423 ,  H10K59/126

    Abstract: The purpose of the present invention is to decrease the resistance of the drain and source in the TFT of the oxide semiconductor as well as to have stable Vd-Id characteristics of the TFT. The structure of the present invention is as follows: A display device having plural pixels including thin film transistors (TFT) having oxide semiconductor films comprising: a gate insulating film formed on the oxide semiconductor film, an aluminum oxide film formed on the gate insulating film, a gate electrode formed on the aluminum oxide film, a side spacer formed on both sides of the gate electrode, and an interlayer insulating film formed on the gate electrode, the side spacer, a drain and a source, wherein in a plan view, and in a direction from the drain to the source, a length of the gate electrode is shorter than a length of the aluminum oxide film.

    DISPLAY DEVICE AND SEMICONDUCTOR DEVICE
    36.
    发明申请
    DISPLAY DEVICE AND SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240369891A1

    公开(公告)日：2024-11-07

    申请号：US18777958

    申请日：2024-07-19

    Applicant: Japan Display Inc.

    Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

    IPC: G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H10K50/86 ,  H10K59/131

    Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

    DISPLAY DEVICE
    38.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20230205023A1

    公开(公告)日：2023-06-29

    申请号：US18085595

    申请日：2022-12-21

    Applicant: Japan Display Inc.

    Inventor： Fumiya KIMURA ,  Isao SUZUMURA

    IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

    CPC classification number: G02F1/136222 ,  G02F1/136286 ,  G02F1/133345 ,  G02F1/136227 ,  G02F1/134345

    Abstract: According to one embodiment, a display device includes a signal line, a scanning line, a semiconductor layer, a first insulating layer which covers the semiconductor layer, a color filter above the first insulating layer, a pixel electrode above the color filter and a common electrode. The first insulating layer includes a first contact hole for connecting the semiconductor layer and the pixel electrode to each other. The first contact hole is provided at a position displaced from the color filter in plan view.

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