Method of fabrication of a FinFET element
    33.
    发明授权
    Method of fabrication of a FinFET element 有权
    FinFET元件的制造方法

    公开(公告)号:US08053299B2

    公开(公告)日:2011-11-08

    申请号:US12425854

    申请日:2009-04-17

    Applicant: Jeff J. Xu

    Inventor: Jeff J. Xu

    CPC classification number: H01L29/66795

    Abstract: The present disclosure provides a FinFET element and method of fabricating a FinFET element. The FinFET element includes a germanium-FinFET element (e.g., a multi-gate device including a Ge-fin). In one embodiment, the method of fabrication the Ge-FinFET element includes forming silicon fins on a substrate and selectively growing an epitaxial layer including germanium on the silicon fins. A Ge-condensation process may then be used to selectively oxidize the silicon of the Si-fin and transform the Si-fin to a Ge-fin. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates, and CMOS-compatible processes to form the Ge-FinFET element.

    Abstract translation: 本公开提供了FinFET元件和制造FinFET元件的方法。 FinFET元件包括锗-FnFET元件(例如,包括Ge鳍的多栅极器件)。 在一个实施例中,制造Ge-FinFET元件的方法包括在衬底上形成硅散热片,并在硅片上选择性地生长包括锗的外延层。 然后可以使用Ge缩合过程来选择性地氧化Si鳍的硅并将Si鳍转化为Ge鳍。 提供的制造方法可以允许使用SOI衬底或体硅衬底以及CMOS兼容工艺来形成Ge-FinFET元件。

    Methods of forming integrated circuits
    34.
    发明授权
    Methods of forming integrated circuits 有权
    形成集成电路的方法

    公开(公告)号:US07939353B1

    公开(公告)日:2011-05-10

    申请号:US12892254

    申请日:2010-09-28

    Applicant: Jeff J. Xu

    Inventor: Jeff J. Xu

    Abstract: A method of forming an integrated circuit includes forming a fluorine-passivated surface of a substrate. A device quality silicon oxide layer is formed by causing the fluorine-passivated surface to interact with an oxygen-containing gas. Hydroxyl groups are substantially formed on a surface of the device quality silicon oxide layer. A high dielectric constant (high-k) gate dielectric layer is formed on the surface of the device quality silicon oxide layer.

    Abstract translation: 形成集成电路的方法包括形成基板的氟钝化表面。 通过使氟钝化表面与含氧气体相互作用形成器件质量的氧化硅层。 羟基基本上形成在器件质量的氧化硅层的表面上。 在器件质量的氧化硅层的表面上形成高介电常数(高k)栅介质层。

Patent Agency Ranking