公开(公告)号：US08394710B2

公开(公告)日：2013-03-12

申请号：US12819440

申请日：2010-06-21

申请人： Kangguo Cheng ,  Bruce B. Doris ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Ghavam G. Shahidi

发明人： Kangguo Cheng ,  Bruce B. Doris ,  Balasubramanian S. Haran ,  Ali Khakifirooz ,  Ghavam G. Shahidi

IPC分类号： H01L21/22 ,  H01L21/38

CPC分类号： H01L29/785 ,  B82Y10/00 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/2257 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/66803 ,  H01L29/775 ,  H01L29/78 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848 ,  H01L29/78696

摘要： A method of forming a semiconductor device is provided, in which the dopant for the source and drain regions is introduced from a doped dielectric layer. In one example, a gate structure is formed on a semiconductor layer of an SOI substrate, in which the thickness of the semiconductor layer is less than 10 nm. A doped dielectric layer is formed over at least the portion of the semiconductor layer that is adjacent to the gate structure. The dopant from the doped dielectric layer is driven into the portion of the semiconductor layer that is adjacent to the gate structure. The dopant diffused into the semiconductor provides source and drain extension regions.

摘要翻译： 提供一种形成半导体器件的方法，其中用于源极和漏极区的掺杂剂从掺杂的介电层引入。 在一个示例中，栅极结构形成在半导体层的厚度小于10nm的SOI衬底的半导体层上。 在与栅极结构相邻的半导体层的至少一部分上形成掺杂介电层。 来自掺杂介电层的掺杂剂被驱动到与栅极结构相邻的半导体层的部分中。 扩散到半导体中的掺杂剂提供了源极和漏极延伸区域。

公开(公告)号：US20110031503A1

公开(公告)日：2011-02-10

申请号：US12538627

申请日：2009-08-10

申请人： Bruce B. Doris ,  Johnathan E. Faltermeier ,  Lahir S. Adam ,  Balasubramanian S. Haran

发明人： Bruce B. Doris ,  Johnathan E. Faltermeier ,  Lahir S. Adam ,  Balasubramanian S. Haran

IPC分类号： H01L29/161 ,  H01L27/092 ,  H01L21/04 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： An FET device is disclosed which contains a source and a drain that are each provided with an extension. The source and the drain, and their extensions, are composed of epitaxial materials containing Ge or C. The epitaxial materials and the Si substrate have differing lattice constants, consequently the source and the drain and their extensions are imparting a state of stress onto the channel. For a PFET device the epitaxial material may be SiGe, or Ge, and the channel may be in a compressive state of stress. For an NFET device the epitaxial material may be SiC and the channel may be in a tensile state of stress. A method for fabricating an FET device is also disclosed. One may form a first recession in the Si substrate to a first depth on opposing sides of the gate. The first recession is filled epitaxially with a first epitaxial material. Then, a second recession may be formed in the Si substrate to a second depth, which is greater than the first depth. Next, one may fill the second recession with a second epitaxial material, which is the same kind of material as the first epitaxial material. The epitaxial materials are selected to have a different lattice constant than the Si substrate, and consequently a state of stress is being imparted onto the channel.

摘要翻译： 公开了一种FET器件，其包含各自具有延伸部的源极和漏极。 源极和漏极及其延伸部分由包含Ge或C的外延材料组成。外延材料和Si衬底具有不同的晶格常数，因此源极和漏极及其延伸部分在沟道上赋予应力状态 。 对于PFET器件，外延材料可以是SiGe或Ge，并且沟道可以处于压应力的压缩状态。 对于NFET器件，外延材料可以是SiC，并且沟道可以处于应力的拉伸状态。 还公开了一种用于制造FET器件的方法。 可以在Si衬底中形成第一凹陷到栅极的相对侧上的第一深度。 用第一外延材料外延地填充第一次衰退。 然后，可以在Si衬底中形成比第一深度更大的第二深度的第二凹陷。 接下来，可以用与第一外延材料相同的材料的第二外延材料填充第二凹陷。 选择外延材料具有与Si衬底不同的晶格常数，并且因此在沟道上施加应力状态。

公开(公告)号：US08679941B2

公开(公告)日：2014-03-25

申请号：US13422138

申请日：2012-03-16

申请人： Jason E Cummings ,  Lisa F Edge ,  Balasubramanian S. Haran ,  David V Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E Cummings ,  Lisa F Edge ,  Balasubramanian S. Haran ,  David V Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： A method of forming a semiconductor device is provided where in one embodiment an STI fill is recessed below the pad nitride and pad oxide layers, to a level substantially coplanar with the top surface of the substrate. A thin (having a thickness in the range of about 10 Å-100 Å) wet etch resistant layer is formed in contact with and completely covering at least the top surface of the recessed STI fill material. The thin wet etch resistant layer is more resistant to a wet etch process than at least the pad oxide layer. The thin wet etch resistant layer may be a refractory dielectric material, or a dielectric such as HfOx, AlyOx, ZrOx, HfZrOx, and HfSiOx. The inventive wet etch resistant layer improves the wet etch budget of subsequent wet etch processing steps.

摘要翻译： 提供一种形成半导体器件的方法，其中在一个实施例中，STI填充物在衬垫氮化物和衬垫氧化物层下方凹入到与衬底的顶表面基本上共面的水平。 至少形成凹入的STI填充材料的上表面，形成薄（具有在约10埃-120埃范围内的厚度）耐湿蚀刻层。 薄的耐湿蚀刻层比至少衬垫氧化物层更耐湿蚀刻工艺。 薄的耐湿蚀刻层可以是耐火电介质材料，或诸如HfO x，Al y O x，ZrO x，HfZrO x和HfSiO x的电介质。 本发明的耐湿蚀刻层提高了后续湿蚀刻处理步骤的湿法蚀刻预算。

公开(公告)号：US08617961B1

公开(公告)日：2013-12-31

申请号：US13551659

申请日：2012-07-18

申请人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

发明人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

IPC分类号： H01L21/76

CPC分类号： H01L21/76283 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66545

摘要： A method for fin field effect transistor (finFET) device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins.

摘要翻译： 鳍状场效应晶体管（finFET）器件形成的方法包括在衬底上形成多个翅片; 在所述多个翅片上形成栅极区域; 以及在形成栅极区域之后形成用于finFET器件的隔离区域，其中形成用于finFET器件的隔离区域包括执行多个鳍片的子集的氧化或去除之一。

公开(公告)号：US20120187523A1

公开(公告)日：2012-07-26

申请号：US13011546

申请日：2011-01-21

申请人： Jason E. Cummings ,  Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E. Cummings ,  Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/762 ,  H01L29/06

CPC分类号： H01L21/76224 ,  H01L21/02107 ,  H01L21/823481 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A shallow trench isolation region is provided in which void formation is substantially or totally eliminated therefrom. The shallow trench isolation mitigates active shorts between two active regions of a semiconductor substrate. The shallow trench isolation region includes a bilayer liner which is present on sidewalls and a bottom wall of a trench that is formed in a semiconductor substrate. The bilayer liner of the present disclosure includes, from bottom to top, a shallow trench isolation liner, e.g., a semiconductor oxide and/or nitride, and a high k liner, e.g., a dielectric material having a dielectric constant that is greater than silicon oxide.

摘要翻译： 提供浅沟槽隔离区域，其中空隙形成基本上或完全从其中消除。 浅沟槽隔离减轻半导体衬底的两个有源区域之间的有源短路。 浅沟槽隔离区域包括存在于形成在半导体衬底中的沟槽的侧壁和底壁上的双层衬垫。 本公开的双层衬垫包括从底部到顶部的浅沟槽隔离衬垫，例如半导体氧化物和/或氮化物，以及高k衬里，例如介电常数大于硅的介电材料 氧化物。

公开(公告)号：US20120178236A1

公开(公告)日：2012-07-12

申请号：US13422138

申请日：2012-03-16

申请人： Jason E. Cummings ,  Lisa F. Edge ,  Balasubramanian S. Haran ,  David V. Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E. Cummings ,  Lisa F. Edge ,  Balasubramanian S. Haran ,  David V. Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： A method of forming a semiconductor device is provided where in one embodiment an STI fill is recessed below the pad nitride and pad oxide layers, to a level substantially coplanar with the top surface of the substrate. A thin (having a thickness in the range of about 10 Å-100 Å) wet etch resistant layer is formed in contact with and completely covering at least the top surface of the recessed STI fill material. The thin wet etch resistant layer is more resistant to a wet etch process than at least the pad oxide layer. The thin wet etch resistant layer may be a refractory dielectric material, or a dielectric such as HfOx, AlyOx, ZrOx, HfZrOx, and HfSiOx. The inventive wet etch resistant layer improves the wet etch budget of subsequent wet etch processing steps.

摘要翻译： 提供一种形成半导体器件的方法，其中在一个实施例中，STI填充物在衬垫氮化物和衬垫氧化物层下方凹入到与衬底的顶表面基本上共面的水平。 至少形成凹入的STI填充材料的上表面，形成薄（具有在约10埃-120埃范围内的厚度）耐湿蚀刻层。 薄的耐湿蚀刻层比至少衬垫氧化物层更耐湿蚀刻工艺。 薄的耐湿蚀刻层可以是耐火电介质材料，或诸如HfO x，Al y O x，ZrO x，HfZrO x和HfSiO x的电介质。 本发明的耐湿蚀刻层提高了后续湿蚀刻处理步骤的湿法蚀刻预算。

公开(公告)号：US08232179B2

公开(公告)日：2012-07-31

申请号：US12571483

申请日：2009-10-01

申请人： Jason E Cummings ,  Lisa F Edge ,  Balasubramanian S. Haran ,  David V Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E Cummings ,  Lisa F Edge ,  Balasubramanian S. Haran ,  David V Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： A method of forming a semiconductor device is provided where in one embodiment an STI fill is recessed below the pad nitride and pad oxide layers, to a level substantially coplanar with the top surface of the substrate. A thin (having a thickness in the range of about 10 Å-100 Å) wet etch resistant layer is formed in contact with and completely covering at least the top surface of the recessed STI fill material. The thin wet etch resistant layer is more resistant to a wet etch process than at least the pad oxide layer. The thin wet etch resistant layer may be a refractory dielectric material, or a dielectric such as HfOx, AlyOx, ZrOx, HfZrOx, and HfSiOx. The inventive wet etch resistant layer improves the wet etch budget of subsequent wet etch processing steps.

摘要翻译： 提供一种形成半导体器件的方法，其中在一个实施例中，STI填充物在衬垫氮化物和衬垫氧化物层下方凹入到与衬底的顶表面基本上共面的水平。 至少形成凹入的STI填充材料的上表面，形成薄（具有在约10埃-120埃范围内的厚度）耐湿蚀刻层。 薄的耐湿蚀刻层比至少衬垫氧化物层更耐湿蚀刻工艺。 薄的耐湿蚀刻层可以是耐火电介质材料，或诸如HfO x，Al y O x，ZrO x，HfZrO x和HfSiO x的电介质。 本发明的耐湿蚀刻层提高了后续湿蚀刻处理步骤的湿法蚀刻预算。

公开(公告)号：US08614486B2

公开(公告)日：2013-12-24

申请号：US13605260

申请日：2012-09-06

申请人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

发明人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

IPC分类号： H01L29/02 ,  H01L21/02

CPC分类号： H01L29/66772 ,  H01L29/6653 ,  H01L29/78621

摘要： A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain regions. The disposable gate spacer is removed and ion implantation is performed into exposed portions of the raised epitaxial semiconductor portions to form source and drain extension regions. In another embodiment, ion implantation for source and drain extension formation is performed through the conformal dielectric layer prior to an anisotropic etch that forms the first gate spacer. The presence of the raised epitaxial semiconductor portions or the conformation dielectric layer prevents complete amorphization of the semiconductor material in the source and drain extension regions, thereby enabling regrowth of crystalline source and drain extension regions.

摘要翻译： 在通过各向异性蚀刻共形介电层形成第一栅极间隔物之后对栅极电介质进行构图，以最小化过蚀刻到半导体层中。 在一个实施例中，执行选择性外延以顺序地形成凸起的外延半导体部分，一次性栅极间隔物和升高的源极和漏极区域。 去除一次性栅极间隔物，并将离子注入进行到隆起的外延半导体部分的暴露部分中以形成源极和漏极延伸区域。 在另一个实施例中，用于源极和漏极延伸形成的离子注入在形成第一栅极间隔物的各向异性蚀刻之前通过保形介电层进行。 升高的外延半导体部分或构象介电层的存在防止了源极和漏极延伸区域中的半导体材料的完全非晶化，从而使结晶源极和漏极延伸区域再生长。

公开(公告)号：US20110081765A1

公开(公告)日：2011-04-07

申请号：US12571483

申请日：2009-10-01

申请人： Jason E. Cummings ,  Lisa F. Edge ,  Balasubramanian S. Haran ,  David V. Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E. Cummings ,  Lisa F. Edge ,  Balasubramanian S. Haran ,  David V. Horak ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： A method of forming a semiconductor device is provided where in one embodiment an STI fill is recessed below the pad nitride and pad oxide layers, to a level substantially coplanar with the top surface of the substrate. A thin (having a thickness in the range of about 10 Å-100 Å) wet etch resistant layer is formed in contact with and completely covering at least the top surface of the recessed STI fill material. The thin wet etch resistant layer is more resistant to a wet etch process than at least the pad oxide layer. The thin wet etch resistant layer may be a refractory dielectric material, or a dielectric such as HfOx, AlyOx, ZrOx, HfZrOx, and HfSiOx. The inventive wet etch resistant layer improves the wet etch budget of subsequent wet etch processing steps.

摘要翻译： 提供一种形成半导体器件的方法，其中在一个实施例中，STI填充物在衬垫氮化物和衬垫氧化物层下方凹入到与衬底的顶表面基本上共面的水平。 至少形成凹入的STI填充材料的上表面，形成薄（具有在约10埃-120埃范围内的厚度）耐湿蚀刻层。 薄的耐湿蚀刻层比至少衬垫氧化物层更耐湿蚀刻工艺。 薄的耐湿蚀刻层可以是耐火电介质材料，或诸如HfO x，Al y O x，ZrO x，HfZrO x和HfSiO x的电介质。 本发明的耐湿蚀刻层提高了后续湿蚀刻处理步骤的湿法蚀刻预算。

公开(公告)号：US20140024198A1

公开(公告)日：2014-01-23

申请号：US13551659

申请日：2012-07-18

申请人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

发明人： Balasubramanian S. Haran ,  Sanjay Mehta ,  Theodorus E. Standaert

IPC分类号： H01L21/76

CPC分类号： H01L21/76283 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66545

摘要： A method for fin field effect transistor (finFET) device formation includes forming a plurality of fins on a substrate; forming a gate region over the plurality of fins; and forming isolation areas for the finFET device after formation of the gate region, wherein forming the isolation areas for the finFET device comprises performing one of oxidation or removal of a subset of the plurality of fins.

摘要翻译： 鳍状场效应晶体管（finFET）器件形成的方法包括在衬底上形成多个翅片; 在所述多个翅片上形成栅极区域; 以及在形成栅极区域之后形成用于finFET器件的隔离区域，其中形成用于finFET器件的隔离区域包括执行多个鳍片的子集的氧化或去除之一。