摘要:
The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1,3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.
摘要:
An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.
摘要:
A polishing pad of the present invention contains a water-insoluble matrix material comprising a crosslinked polymer such as a crosslinked 1,2-polybutadiene and water-soluble particles dispersed in the material, such as saccharides. The solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C., and the amount of water-soluble particles eluted from the pad when the pad is immersed in water is 0.05 to 50 wt % at 25° C. Further, in the polishing pad of the present invention, the solubility of the water-soluble particles in water is 0.1 to 10 wt % at 25° C. at a pH of 3 to 11, and solubility thereof in water at 25° C. at a pH of 3 to 11 is within ±50% of solubility thereof in water at 25° C. at a pH of 7. In addition, the water-soluble particles contain an amino group, an epoxy group, an isocyanurate group, and the like. This polishing pad has good slurry retainability even if using slurries different in pH and also has excellent polishing properties such as a polishing rate and planarity.
摘要:
There is provided a chemical mechanical polishing pad containing a polishing substrate having a polishing surface and a light-transmitting member fused to the polishing substrate. The sectional form of the light-transmitting member when it is cut with a plane parallel to the polishing surface is elliptic with a value obtained by dividing its long diameter by its short diameter of more than 1. The pad is capable of transmitting end-point detection light without reducing its polishing efficiency in polishing a semiconductor wafer.
摘要:
A process for producing a polyorganosiloxane-based thermoplastic resin which comprises graft polymerizing (3) at least one vinyl monomer using (4) an initiator which is an organic peroxide which, upon decomposition, produces an organic radical represented by the structural formula: ##STR1## wherein R.sup.2, R.sup.3 and R.sup.4 represent independently hydrogen atoms or alkyl groups having 1 to 10 carbon atoms, in the presence of (2) a polyorganosiloxane.
摘要:
A polyorganosiloxane-type thermoplastic resin having excellent slidability, abrasion resistance, weatherability, impact strength, fatigue resistance and chemical resistance is disclosed. The thermoplastic resin comprises a graft copolymer (IV) obtained by graft-polymerizing at least one vinyl monomer (v) onto a modified polyorganosiloxane obtained by polymerizing 80 to 99.8% by weight of an organosiloxane (I) having the structural unit described thereinabove, 0.1 to 10% by weight of at least one graft crosslinking agent (II) containing an alkoxysilyl group, selected from the group consisting of a vinyl-type graft crosslinking agent, a mercapto-type graft crosslinking agent, an acryloyl-type crosslinking agent and a vinylphenyl-type crosslinking agent, and 0.1 to 10% by weight of a compound (III) having two alkoxysilyl groups, provided that (I)+(II)+(III)=100% by weight.
摘要:
A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a 10-point height (Rz) of 40 to 150 μm, a core roughness depth (Rk) of 12 to 50 μm and a reduced peak height (Rpk) of 7 to 40 μm, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.
摘要:
Spherical particles include a core of a polymer and a metal compound covering the polymer core. These particles may be formed by homogeneously dispersing particles of a polymeric compound in an aqueous solution of a hydrolyzable metal salt to form a uniform metal layer around the spherical particles. The spherical particles can also include a core of carbon and a metal compound covering the carbon core or the particles can have a hollow core prepared by heating spherical polymer particles coated with a metal compound to a temperature of 150.degree. C. or higher in the presence of oxygen to completely decompose the polymeric compound. These spherical particles are useful in electronic materials, magnetic materials and the like.
摘要:
A chemical mechanical polishing pad having a face for polishing an object to be polished, a non-polishing face opposite to the face and a side face for interconnecting these faces and including the pattern of recessed portions which are formed on the non-polishing face and are open to the non-polishing face but not on the side face.
摘要:
A chemical mechanical polishing pad. The pad contains a water-insoluble matrix and Water-soluble particles dispersed in the water-insoluble matrix material and has a polishing surface and a non-polishing surface on a side opposite to the polishing surface. The pad has a light transmitting area which optically communicates from the polishing surface to the non-polishing surface. The non-polishing surface of the light transmitting area has a surface roughness (Ra) of 10 pm or less.