公开(公告)号：US4314595A

公开(公告)日：1982-02-09

申请号：US110456

申请日：1980-01-08

申请人： Kazuhiko Yamamoto ,  Yoshiaki Matsushita ,  Masaru Kanamori ,  Kazutoshi Nagasawa ,  Naotsugu Yoshihiro ,  Seigo Kishino

发明人： Kazuhiko Yamamoto ,  Yoshiaki Matsushita ,  Masaru Kanamori ,  Kazutoshi Nagasawa ,  Naotsugu Yoshihiro ,  Seigo Kishino

IPC分类号： H01L21/66 ,  H01L21/322 ,  H01L7/52

CPC分类号： H01L21/3225 ,  Y10S148/024

摘要： A silicon single crystal wafer is subjected to two-stage heat treatment. In the first-stage it is heated at a temperature within the range of between 500.degree. C. and 1,000.degree. C. Subsequently the thus heated wafer is heated at a temperature higher than that at the first stage. Thus, a nondefective zone is formed in the surface region of the wafer, and the interior zone of the wafer becomes rich in micro defects capable of gettering impurities such as heavy metals.

摘要翻译： 将硅单晶晶片进行两级热处理。 在第一阶段中，在500℃至1000℃的温度范围内加热。随后将这样加热的晶片在高于第一阶段的温度下加热。 因此，在晶片的表面区域形成非缺陷区，并且晶片的内部区域变得富含能够吸收诸如重金属的杂质的微缺陷。

公开(公告)号：US08866119B2

公开(公告)日：2014-10-21

申请号：US13051264

申请日：2011-03-18

申请人： Kazuhiko Yamamoto ,  Kenji Aoyama

发明人： Kazuhiko Yamamoto ,  Kenji Aoyama

IPC分类号： H01L29/04 ,  H01L47/00 ,  H01L29/06 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00 ,  G11C13/02

CPC分类号： H01L45/04 ,  G11C13/0014 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/149 ,  H01L45/1675

摘要： According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.

摘要翻译： 根据一个实施例，存储器件包括选择元件层，纳米材料聚集体层和细颗粒。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层具有多个与插入的间隙聚集的微导电体。 细颗粒至少具有由氮氧化硅制成的表面。 微细颗粒分散在纳米材料聚集体层的一部分中的微导电体之间，该纳米材料聚集体层在厚度方向上穿透纳米材料聚集体层。

公开(公告)号：US08729517B2

公开(公告)日：2014-05-20

申请号：US13044951

申请日：2011-03-10

申请人： Takuya Konno ,  Kazuhiko Yamamoto

发明人： Takuya Konno ,  Kazuhiko Yamamoto

IPC分类号： H01L45/00

CPC分类号： H01L45/141 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/148 ,  H01L45/1608

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.

摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。 第一互连在衬底的主表面上沿第一方向延伸。 第二互连在不平行于第一方向的第二方向上延伸。 电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变 和第二互连。 电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。

公开(公告)号：US20120119179A1

公开(公告)日：2012-05-17

申请号：US13354380

申请日：2012-01-20

申请人： Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

发明人： Shinichi Nakao ,  Kei Watanabe ,  Kazuhiko Yamamoto ,  Ichiro Mizushima ,  Yoshio Ozawa

IPC分类号： H01L47/00 ,  H01L21/02 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： B82Y10/00 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/149 ,  H01L45/1608

摘要： According to one embodiment, a memory device includes a nanomaterial aggregate layer of a plurality of fine conductors aggregating via gaps and an insulating material disposed in the gaps.

摘要翻译： 根据一个实施例，存储器件包括通过间隙聚集的多个细小导体的纳米材料聚集体层和设置在间隙中的绝缘材料。

公开(公告)号：US20110303888A1

公开(公告)日：2011-12-15

申请号：US13044865

申请日：2011-03-10

申请人： Hiroyuki FUKUMIZU ,  Yasuhiro Nojiri ,  Tsukasa Nakai ,  Kazuhiko Yamamoto

发明人： Hiroyuki FUKUMIZU ,  Yasuhiro Nojiri ,  Tsukasa Nakai ,  Kazuhiko Yamamoto

IPC分类号： H01L45/00

CPC分类号： H01L27/2481 ,  H01L27/2409 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1608 ,  H01L45/1675

摘要： According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and a carbon-containing barrier layer provided at least one of between the first electrode film and the memory layer and between the second electrode film and the memory layer. The barrier layer has lower electrical resistivity than the memory layer.

摘要翻译： 根据一个实施例，非易失性存储器件包括连接到第一互连和第二互连的存储单元。 存储单元包括多个层。 多个层包括夹在第一电极膜和第二电极膜之间的含碳存储层和设置在第一电极膜和存储层之间以及第二电极膜和第二电极膜之间的至少一个的含碳阻挡层， 内存层。 阻挡层的电阻率比存储层低。

公开(公告)号：US20100321454A1

公开(公告)日：2010-12-23

申请号：US12820278

申请日：2010-06-22

申请人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

发明人： Kenichi Seguchi ,  Kazuhiko Yamamoto ,  Ichiro Miyamoto ,  Masayuki Matsubara ,  Masayoshi Iwasaki ,  Hideyuki Uemura

IPC分类号： B41J3/407

CPC分类号： B41M5/52 ,  B41M5/5245 ,  B41M5/5254 ,  B41M5/5263 ,  B41M5/5281 ,  B41M5/529

摘要： The present invention relates to an inkjet recording sheet for forming an image using aqueous pigment ink comprising: a substrate; and an ink-receiving layer formed on the substrate, wherein the ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition, and wherein, in the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.

摘要翻译： 本发明涉及一种使用含水颜料墨水形成图像的喷墨记录纸，包括：基材; 以及形成在所述基板上的墨接收层，其中所述墨接收层通过在所述基板上涂布涂料组合物而获得，所述涂料组合物包含：具有可水解甲硅烷基作为交联组分的阳离子丙烯酸硅酮乳液基树脂; 阳离子聚醚基聚氨酯树脂; 和含有碳化二亚胺基团的树脂，然后使所涂覆的涂料组合物固化，其中在涂料组合物中，阳离子丙烯酸硅氧烷乳液基树脂的含量为2〜7质量％，阳离子聚醚 - 基于聚氨酯的聚氨酯树脂为88〜94质量％，含碳二亚胺基的树脂的含量以固形物计为2〜6质量％。

公开(公告)号：US20080265380A1

公开(公告)日：2008-10-30

申请号：US12104353

申请日：2008-04-16

申请人： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

发明人： Lars-Ake Ragnarsson ,  Paul Zimmerman ,  Kazuhiko Yamamoto ,  Tom Schram ,  Wim Deweerd ,  David Brunco ,  Stefan De Gendt ,  Wilfried Vandervorst

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： H01L21/316 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.

摘要翻译： 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。

公开(公告)号：US07286688B2

公开(公告)日：2007-10-23

申请号：US10788780

申请日：2004-02-27

申请人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

发明人： Kazuhiko Yamamoto ,  Kunihito Kato ,  Ayami Iwata

IPC分类号： G06K9/00

CPC分类号： G06T7/269 ,  G06T7/74

摘要： A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.

摘要翻译： 移动单元在参考平面上移动。 移动单元具有用于检测参考平面上的物体的物体检测装置。 物体检测装置包括照相机，镜子和计算机。 镜子切割由相机接收的图像，使得照相机接收被分成参考平面图像和对象图像的图像。 参考平面图像包含参考平面。 对象图像包含对象，不包含参考平面。 因此，距离测量装置可以容易地分离包括物体的区域和不包括物体的区域，并且精确地检测到物体的距离。

公开(公告)号：US20060209217A1

公开(公告)日：2006-09-21

申请号：US11142653

申请日：2005-06-01

申请人： Takehiro Onomatsu ,  Kazuhiko Yamamoto

发明人： Takehiro Onomatsu ,  Kazuhiko Yamamoto

IPC分类号： H04N5/50

CPC分类号： H04N5/50 ,  H01Q3/30 ,  H01Q21/205 ,  H04N21/4345 ,  H04N21/4384 ,  H04N21/44209

摘要： Disclosed is a television tuner for receiving television broadcast signals with an antenna, which is equipped with an auto-scan unit that causes a channel storing section, which stores a receiving channel at the time when the signal condition from a tuner section matches the predetermined signal condition, to automatically store the receiving channel, wherein the auto scan unit detects switches among the receiving channel sequentially in the tuner section to detect the signal condition, and, after signal condition is detected for every channel, performs a variable directivity control for the antenna, resulting in an increased auto-scan execution speed.

摘要翻译： 公开了一种用于接收具有天线的电视广播信号的电视调谐器，其配备有自动扫描单元，该自动扫描单元导致在来自调谐器部分的信号条件与预定信号匹配时存储接收信道的信道存储部分 条件是自动存储接收通道，其中自动扫描单元在调谐器部分中顺序地检测接收信道中的切换以检测信号状况，并且在每个信道检测到信号条件之后，对天线进行可变方向性控制 ，导致自动扫描执行速度提高。

公开(公告)号：US20060083076A1

公开(公告)日：2006-04-20

申请号：US11052769

申请日：2005-02-09

申请人： Motohiro Sakai ,  Kazuhiko Yamamoto

发明人： Motohiro Sakai ,  Kazuhiko Yamamoto

IPC分类号： G11C7/10

CPC分类号： G06F3/0605 ,  G06F3/0613 ,  G06F3/0644 ,  G06F3/065 ,  G06F3/0685 ,  G06F11/1448 ,  G06F11/1469

摘要： A backup data storage control unit makes a write-once storage medium store by-generation backup data in order of generations. A generation identification data storage control unit makes a generation identification data of the backup data stored at a storage position right in front of the by-generation backup data in the storage medium.

摘要翻译： 备份数据存储控制单元使一次写入存储介质按代数顺序存储副产品备份数据。 一代识别数据存储控制单元将存储在存储介质中的副产品备份数据前面的存储位置处的备份数据的生成识别数据。