公开(公告)号：US20190081210A1

公开(公告)日：2019-03-14

申请号：US16038202

申请日：2018-07-18

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jun-Rong CHEN ,  Guo-Yi SHIU

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/62 ,  B32B7/12

CPC classification number: H01L33/325 ,  B32B7/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0025

Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.

公开(公告)号：US20170012175A1

公开(公告)日：2017-01-12

申请号：US15199477

申请日：2016-06-30

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Te-Chung WANG ,  Shih-Huan LAI ,  Shiou-Yi KUO

IPC: H01L33/46 ,  H01L27/15 ,  H01L33/32 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L27/156 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.

Abstract translation: 提供了一种发光元件，包括：依次包括第一类型半导体层，发光层和第二类型半导体层的发光单元，其中，所述发光单元具有通过所述第二类型半导体层的开口， 型半导体层和发光层以暴露第一型半导体层的一部分; 设置在所述第二类型半导体层上的电流传导层; 第一电极，设置在电流传导层上并暴露其一部分; 分布布拉格反射器，布置在第一电极上并覆盖电流传导层的暴露部分; 以及设置在所述分布式布拉格反射器上并填充所述开口以电连接到所述第一类型半导体层的第二电极。

公开(公告)号：US20240313180A1

公开(公告)日：2024-09-19

申请号：US18498743

申请日：2023-10-31

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/24

CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/24 ,  H01L2933/0066

Abstract: A micro light-emitting diode pixel structure and a method for forming the same are provided. The micro light emitting diode pixel structure includes micro light emitting diode chips, redistribution layers, bonding pads, an insulating layer, a flexible material layer and a first hard mask pattern. The redistribution layers are electrically connected to electrode surfaces of the micro light-emitting diode chips. The bonding pads are disposed under the redistribution layers. The insulation layer is disposed between the redistribution layers and the bonding pads. The flexible material layer disposed on the insulating layer to cover the micro light-emitting diode chips, the redistribution layers and insulation layer. The first hard mask pattern is disposed under or above the flexible material layers. In a cross-sectional view, the first hard mask pattern has a first edge and the flexible material layer has a second edge flush with the first edge.

公开(公告)号：US20230299056A1

公开(公告)日：2023-09-21

申请号：US18185531

申请日：2023-03-17

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG ,  Guo-Yi SHIU

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/10 ,  H01L25/16 ,  H01L27/12

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L33/10 ,  H01L25/167 ,  H01L27/124

Abstract: A light-emitting diode device including a pixel structure including first, second and third light-emitting diode chips, a passivation layer, and first, second, third and fourth circuit layers is provided. The first and second light-emitting diode chips are positioned on a top surface opposite to a light-emitting surface of the third light-emitting diode chip. First and second vertical projections of the first and second light-emitting diode chips on the top surface do not overlap each other. First and second bonding surfaces of the first and second circuit layers corresponding to openings in the passivation layer are positioned to overlap the first vertical projection and are separated from the second vertical projection. Third and fourth bonding surfaces of the third and fourth circuit layers that correspond to openings in the passivation layer are positioned to overlap the second vertical projection and are separated from the first vertical projection.

公开(公告)号：US20230207744A1

公开(公告)日：2023-06-29

申请号：US18172283

申请日：2023-02-21

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO

IPC: H01L33/48 ,  H01L33/52 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L33/486 ,  H01L33/52 ,  H01L29/0665 ,  H01L21/0228 ,  H01L2924/12041

Abstract: A light emitting diode (LED) package includes a substrate, at least one micro LED chip, a black material layer, and a transparent material layer. The substrate has a width ranging from 100 micrometers to 1000 micrometers. The at least one micro LED chip is electrically mounted on a top surface of the substrate and has a width ranging from 1 micrometer to 100 micrometers. The black material layer covers the top surface of the substrate to expose the at least one micro LED chip. The transparent material layer covers the at least one micro LED chip and the black material layer.

公开(公告)号：US20230131636A1

公开(公告)日：2023-04-27

申请号：US17970487

申请日：2022-10-20

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU ,  Chih-Hao LIN ,  Min-Che TSAI ,  Jian-Chin LIANG

IPC: H01L25/16 ,  H01L33/54 ,  H01L33/62 ,  H01L33/60

Abstract: Embodiments provide a micro light-emitting diode package structure and a method for forming the same. The micro light-emitting diode package structure includes a redistribution layer, a control device, micro light-emitting diodes, and a flexible material layer. The control device and the micro light-emitting diodes are disposed on and electrically connected to the redistribution layer. The flexible material layer covers the control device and the micro light-emitting diodes, wherein the micro light-emitting diodes are in contact with the flexible material layer.

公开(公告)号：US20230070973A1

公开(公告)日：2023-03-09

申请号：US17939799

申请日：2022-09-07

Applicant: Lextar Electronics Corporation

Inventor： Chih-Hao LIN ,  Jo-Hsiang CHEN ,  Wei-Yuan MA ,  Hui-Ru WU ,  Min-Che TSAI ,  Shiou-Yi KUO ,  Jian-Chin LIANG

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/00

Abstract: A package structure, a display device, and manufacturing methods thereof are provided. A package structure includes a conductive element, a first dielectric layer, a redistribution layer, a second dielectric layer, a light-shielding layer, a conductive layer, and a light-emitting diode unit. The first dielectric layer is disposed on the conductive element. The redistribution layer is disposed on the first dielectric layer. The redistribution layer is electrically connected to the conductive element. The second dielectric layer is disposed on the first dielectric layer. The light-shielding layer is disposed on the second dielectric layer. The conductive layer is disposed on the redistribution layer and includes a first conductive portion with a light reflectivity of less than 30%. The light-emitting diode unit is disposed on the conductive layer.

公开(公告)号：US20210398841A1

公开(公告)日：2021-12-23

申请号：US17344924

申请日：2021-06-10

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU

IPC: H01L21/683 ,  H01L25/075 ,  H01L33/22 ,  H01L33/62

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer and a pick-up layer. The first type semiconductor layer and the second type semiconductor layer are located on two opposite sides of the active layer respectively. The pick-up layer is located on the second type semiconductor layer, wherein the pick-up layer has a patterned outer surface to serve as a grabbed surface during transferring.

公开(公告)号：US20200251640A1

公开(公告)日：2020-08-06

申请号：US16777796

申请日：2020-01-30

Applicant: Lextar Electronics Corporation ,  ULTRA DISPLAY TECHNOLOGY CO., LTD.

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Shen-De CHEN

IPC: H01L33/62 ,  H01L33/00

Abstract: A light emitting diode includes an active layer, a first type semiconductor layer, a second type semiconductor layer, a coupling layer, and a sacrificial thin film. The first type semiconductor layer and the second type semiconductor layer are disposed at opposite sides of the active layer. The coupling layer is disposed on the second type semiconductor layer. The sacrificial thin film is disposed on the coupling layer, in which the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer.

公开(公告)号：US20200235266A1

公开(公告)日：2020-07-23

申请号：US16742891

申请日：2020-01-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L33/22 ,  H01L33/42

Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.