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公开(公告)号:US20230084630A1
公开(公告)日:2023-03-16
申请号:US17668311
申请日:2022-02-09
Applicant: Micron Technology, Inc.
Inventor: Luca Nubile , Walter Di Francesco , Fumin Gu , Ali Mohammadzadeh , Biagio Iorio , Liang Yu
IPC: G06F3/06
Abstract: A memory device includes memory dice, each memory die including: a memory array; a memory to store a data structure; and control logic that includes: multiple processing threads to execute memory access operations on the memory array concurrently; a priority ring counter, the data structure to store an association between a value of the priority ring counter and a subset of the multiple processing threads; a threads manager to increment the value of the priority ring counter before a power management cycle and to identify one or more prioritized processing threads corresponding to the subset of the multiple processing threads; and a peak power manager coupled with the threads manager and to prioritize allocation of power to the one or more prioritized processing threads during the power management cycle.
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公开(公告)号:US20230059543A1
公开(公告)日:2023-02-23
申请号:US17887940
申请日:2022-08-15
Applicant: Micron Technology, Inc.
Inventor: Andrea Giovanni Xotta , Dheeraj Srinivasan , Ali Mohammadzadeh , Karl D. Schuh , Guido Luciano Rizzo , Jung Sheng Hoei , Michele Piccardi , Tommaso Vali , Umberto Siciliani , Rohitkumar Makhija , June Lee , Aaron S. Yip , Daniel J. Hubbard
IPC: G06F3/06
Abstract: A memory device includes a memory array comprising a plurality of memory planes, wherein the plurality of memory planes are arranged in a plurality of independent plane groups, and wherein each of the plurality of independent plane groups comprises one or more of the plurality of memory planes. The memory device further includes a plurality of independent analog driver circuits coupled to the memory array, wherein a respective one of the plurality of independent analog driver circuits is associated with a respective one of the plurality of independent plane groups. The memory device further includes a common analog circuit coupled to the memory array, wherein the common analog circuit is shared by the plurality of independent analog driver circuits and the plurality of independent plane groups. The memory device further includes a plurality of control logic elements, wherein a respective one of the plurality of control logic elements is associated with a respective one of the plurality of independent analog driver circuits and a respective one of the plurality of independent plane groups.
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公开(公告)号:US11416154B2
公开(公告)日:2022-08-16
申请号:US17123472
申请日:2020-12-16
Applicant: Micron Technology, Inc.
Inventor: Sivagnanam Parthasarathy , Terry M. Grunzke , Lucia Botticchio , Walter Di Francesco , Vamshi K. Indavarapu , Gianfranco Valeri , Renato C. Padilla , Ali Mohammadzadeh , Jung Sheng Hoei , Luca De Santis
IPC: G06F3/06 , G06F12/02 , G06F12/1009
Abstract: The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.
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公开(公告)号:US20210181955A1
公开(公告)日:2021-06-17
申请号:US17187066
申请日:2021-02-26
Applicant: Micron Technology, Inc.
Inventor: Ali Mohammadzadeh , Jung Sheng Hoei , Dheeraj Srinivasan , Terry M. Grunzke
IPC: G06F3/06 , G06F12/0811
Abstract: The present disclosure relates to apparatuses and methods to control memory operations on buffers. An example apparatus includes a memory device and a host. The memory device includes a buffer and an array of memory cells, and the buffer includes a plurality of caches. The host includes a system controller, and the system controller is configured to control performance of a memory operation on data in the buffer. The memory operation is associated with data movement among the plurality of caches.
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公开(公告)号:US10977186B2
公开(公告)日:2021-04-13
申请号:US15819941
申请日:2017-11-21
Applicant: Micron Technology, Inc.
Inventor: Dheeraj Srinivasan , Ali Mohammadzadeh , Michael G. Miller , Xiaoxiao Zhang , Jung Sheng Hoei
IPC: G06F12/02 , G06F3/06 , G06F12/1009 , G11C11/56 , G06F11/07
Abstract: An example method of the present disclosure includes, responsive to a loss of last written page information by a memory system, initiating a last written page search to determine last written page information of a memory device, where the last written page search is initiated via a command from a controller of the memory system to the memory device, responsive to receiving the command, performing the last written page search on the memory device, and providing the last written page information to the controller.
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公开(公告)号:US20190286328A1
公开(公告)日:2019-09-19
申请号:US16428011
申请日:2019-05-31
Applicant: Micron Technology, Inc.
Inventor: Sivagnanam Parthasarathy , Terry M. Grunzke , Lucia Botticchio , Walter Di Francesco , Vamshi K. Indavarapu , Gianfranco Valeri , Renato C. Padilla , Ali Mohammadzadeh , Jung Sheng Hoei , Luca De Santis
IPC: G06F3/06 , G06F12/02 , G06F12/1009
Abstract: The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.
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公开(公告)号:US10372353B2
公开(公告)日:2019-08-06
申请号:US15609569
申请日:2017-05-31
Applicant: Micron Technology, Inc.
Inventor: Ali Mohammadzadeh , Jung Sheng Hoei , Dheeraj Srinivasan , Terry M. Grunzke
IPC: G06F12/00 , G06F13/00 , G06F3/06 , G06F12/0811
Abstract: The present disclosure relates to apparatuses and methods to control memory operations on buffers. An example apparatus includes a memory device and a host. The memory device includes a buffer and an array of memory cells, and the buffer includes a plurality of caches. The host includes a system controller, and the system controller is configured to control performance of a memory operation on data in the buffer. The memory operation is associated with data movement among the plurality of caches.
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公开(公告)号:US10359963B2
公开(公告)日:2019-07-23
申请号:US15532886
申请日:2017-01-23
Applicant: Micron Technology, Inc.
Inventor: Sivagnanam Parthasarathy , Terry M. Grunzke , Lucia Botticchio , Walter Di Francesco , Vamshi K. Indavarapu , Gianfranco Valeri , Renato C. Padilla , Ali Mohammadzadeh , Jung Sheng Hoei , Luca De Santis
IPC: G06F3/06 , G06F12/02 , G06F12/1009
CPC classification number: G06F3/064 , G06F3/0611 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F12/0246 , G06F12/1009 , G06F2212/1021 , G06F2212/2022 , G06F2212/7201
Abstract: The present disclosure relates to partially written block treatment. An example method comprises maintaining, internal to a memory device, a status of a last written page corresponding to a partially written block. Responsive to receiving, from a controller, a read request to a page of the partially written block, the example method can include determining, from page map information maintained internal to the memory device and from the status of the last written page, which of a number of different read trim sets to use to read the page of the partially written block corresponding to the read request.
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公开(公告)号:US20180349029A1
公开(公告)日:2018-12-06
申请号:US15609569
申请日:2017-05-31
Applicant: Micron Technology, Inc.
Inventor: Ali Mohammadzadeh , Jung Sheng Hoei , Dheeraj Srinivasan , Terry M. Grunzke
IPC: G06F3/06 , G06F12/0811
CPC classification number: G06F3/0619 , G06F3/0616 , G06F3/0656 , G06F3/0659 , G06F3/0679 , G06F12/0811 , G06F2212/283 , G06F2212/601
Abstract: The present disclosure relates to apparatuses and methods to control memory operations on buffers. An example apparatus includes a memory device and a host. The memory device includes a buffer and an array of memory cells, and the buffer includes a plurality of caches. The host includes a system controller, and the system controller is configured to control performance of a memory operation on data in the buffer. The memory operation is associated with data movement among the plurality of caches.
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公开(公告)号:US20170076806A1
公开(公告)日:2017-03-16
申请号:US15342255
申请日:2016-11-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Benjamin Louie , Ali Mohammadzadeh , Aaron S. Yip
CPC classification number: G11C16/24 , G11C16/0483 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/26
Abstract: Memory devices are configured to store a number of access line biasing patterns to be applied during a memory device operation performed on a particular row of memory cells in the memory device. Memory devices are further configured to support modification of the stored bias patterns, providing flexibility in biasing access lines through changes to the bias patterns stored in the memory device. Methods and devices further facilitate performing memory device operations under multiple biasing conditions to evaluate and characterize the memory device by adjustment of the stored bias patterns without requiring an associated hardware change to the memory device.
Abstract translation: 存储器设备被配置为存储在对存储器设备中的特定行存储器单元执行的存储器件操作期间要应用的许多访问线偏置模式。 存储器设备被进一步配置为支持所存储的偏置图案的修改,通过对存储在存储器件中的偏置图案的改变来偏置访问线路提供灵活性。 方法和设备进一步便于在多个偏置条件下执行存储器件操作,以通过调整存储的偏压图案来评估和表征存储器件,而不需要对存储器件的相关联的硬件改变。
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