Abstract:
Embodiments of the disclosure are drawn to apparatuses and methods for timing refresh operations in a memory device. An apparatus may include an oscillator that provides a periodic signal to one or more refresh timer circuits. Each of the refresh timer circuits is associated with a respective memory bank in the memory device. The refresh timer may include a counter block and a control logic block. The control logic block may gate the periodic signal to the counter block. The counter block may count the row active signal time and the row precharge time. The counter signals may be used by the control logic block to output a number of pumps of a refresh operation.
Abstract:
Methods and apparatuses are provided for dynamic step size for impedance calibration of a semiconductor device. An example apparatus includes a resistance calibration circuit configured to provide an impedance code to set impedance of a driver circuit. The resistance calibration circuit includes an adder/subtractor circuit configured to change the impedance code by a first step size responsive to the impedance code being less than a value to adjust the impedance of the driver circuit and further configured to change the impedance code by a second step size responsive to the impedance code greater or equal than the value to adjust the impedance of the driver circuit. The second step size is different from the first step size.
Abstract:
Methods and apparatuses are provided for dynamic step size for impedance calibration of a semiconductor device. An example apparatus includes a resistance calibration circuit configured to provide an impedance code to set impedance of a driver circuit. The resistance calibration circuit includes an adder/subtractor circuit configured to change the impedance code by a first step size responsive to the impedance code being less than a value to adjust the impedance of the driver circuit and further configured to change the impedance code by a second step size responsive to the impedance code greater or equal than the value to adjust the impedance of the driver circuit. The second step size is different from the first step size.
Abstract:
Techniques for using a single thru-chip signal path to auto-identify and address each integrated circuit within a stack of integrated circuits upon power-up of stack. In an example, each integrated circuit of the stack can include a single auto-identify input terminal, a single auto-identify output terminal, and control logic configured to receive a logic state on the single auto-identify input terminal, to set an internal indicator to one of three states, and to control a state of the single auto-identify output terminal in response to a power up condition or to a change in the logic state of the single auto-identify input terminal;
Abstract:
Apparatuses and methods for memory testing with data compression is described. An example apparatus includes a plurality of latch test circuits, wherein each of the plurality of latch test circuits is coupled to a corresponding global data line of a memory. Each of the latch test circuits is configured to receive test data and is configured to latch data from the corresponding global data line or a corresponding mask bit. Each of the plurality of latch test circuits is further configured to output data based at least in part on the corresponding mask bit. A comparison circuit is coupled to an output of each of the latch test circuits and is configured to compare output data provided by each of the latch test circuits and provide a comparator output having a logical value indicative of whether all the output data matches.
Abstract:
An apparatus includes a TM control circuit that is configured to receive address information corresponding to a TM function and compare the address information with an authorized TM list stored in a memory of the apparatus to determine if there is a match. If there is a match, a latch load signal pulse is output. A TM latch circuit programs one or more latches based on the address information and based on the latch load signal pulse. The TM latch circuit decodes information in the one or more latches and, based on the decoded information, outputs a test mode signal to turn on test mode operations in circuits associated with the TM function. The apparatus includes a plurality of TM functions for testing various features of the apparatus and the authorized TM list identifies which of the plurality of TM functions has been authorized for customer use.
Abstract:
An electronic device includes multiple memory elements including multiple redundant memory elements. The electronic device also includes repair circuitry configured to remap data to the multiple memory elements when a failure occurs. The repair circuitry includes multiple fuse latches configured to implement the remapping. The repair circuitry also includes latch testing circuitry configured to test functionality of the multiple fuse latches. The latch testing circuitry includes selection circuitry configured to enable selection of a first set of fuse latches of the multiple fuse latches for a test separate from a second set of fuse latches of the multiple fuse latches that are unselected by the selection circuitry.
Abstract:
An apparatus includes a TM control circuit that is configured to receive address information corresponding to a TM function and compare the address information with an authorized TM list stored in a memory of the apparatus to determine if there is a match. If there is a match, a latch load signal pulse is output. A TM latch circuit programs one or more latches based on the address information and based on the latch load signal pulse. The TM latch circuit decodes information in the one or more latches and, based on the decoded information, outputs a test mode signal to turn on test mode operations in circuits associated with the TM function. The apparatus includes a plurality of TM functions for testing various features of the apparatus and the authorized TM list identifies which of the plurality of TM functions has been authorized for customer use.
Abstract:
Apparatuses, systems, and methods for refresh address masking. A memory device may refresh word lines as part of refresh operation by cycling through the word lines in a sequence. However, it may be desirable to avoid activating certain word lines (e.g., because they are defective). Refresh masking logic for each bank may include a fuse latch which stores a selected address associated with a word line to avoid. When a refresh address is generated it may be compared to the selected address. If there is a match, a refresh stop signal may be activated, which may prevent refreshing of the word line(s).
Abstract:
Methods of testing memory devices are disclosed. A method may include reading from a number of memory addresses of a memory array of the memory device and identifying each memory address of the number of addresses as either a pass or a fail. The method may further include storing, for each identified fail, data associated with the identified fail in a buffer of the memory device. Further, the method may include conveying, to a tester external to the memory device, at least some of the data associated with each identified fail without conveying address data associated with each identified pass to the tester. Devices and systems are also disclosed.