公开(公告)号：US20180033780A1

公开(公告)日：2018-02-01

申请号：US15728043

申请日：2017-10-09

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/18 ,  H01L21/683 ,  H01L21/78 ,  H01L23/544 ,  H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.

公开(公告)号：US20170179045A1

公开(公告)日：2017-06-22

申请号：US15446583

申请日：2017-03-01

Applicant: Micron Technology, Inc.

Inventor： Aibin Yu ,  Wei Zhou ,  Zhaohui Ma ,  Bret K. Street

IPC: H01L23/00 ,  H01L23/544 ,  H01L21/56

CPC classification number: H01L23/562 ,  H01L21/561 ,  H01L23/544 ,  H01L25/0657 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Wafer-level methods of processing semiconductor devices may involve forming grooves partially through a molding material, the molding material located in streets and at least surrounding stacks of semiconductor dice located on a wafer. Wafer-level methods of preparing semiconductor devices may involve attaching a wafer to a carrier substrate and forming stacks of laterally spaced semiconductor dice on die locations of the wafer. Molding material may be disposed over the die stacks on a surface of the wafer to at least surround the stacks of semiconductor dice with the molding material. Grooves may be formed in the molding material by partially cutting through the molding material between at least some of the stacks of semiconductor dice along streets between the die stacks. The resulting wafer-level assembly may then, when exposed to elevated temperatures during, for example, debonding the wafer from a carrier, exhibit reduced propensity for warping.

公开(公告)号：US20160093583A1

公开(公告)日：2016-03-31

申请号：US14496082

申请日：2014-09-25

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Aibin Yu ,  Wei Zhou ,  Zhaohui Ma

IPC: H01L23/00 ,  H01L23/48

CPC classification number: H01L24/14 ,  H01L21/76898 ,  H01L23/00 ,  H01L23/481 ,  H01L24/00 ,  H01L24/09 ,  H01L24/81 ,  H01L2224/1701 ,  H01L2924/01029

Abstract: A bond pad with micro-protrusions for direct metallic bonding. In one embodiment, a semiconductor device comprises a semiconductor substrate, a through-silicon via (TSV) extending through the semiconductor substrate, and a copper pad electrically connected to the TSV and having a coupling side. The semiconductor device further includes a copper element that projects away from the coupling side of the copper pad. In another embodiment, a bonded semiconductor assembly comprises a first semiconductor substrate with a first TSV and a first copper pad electrically coupled to the first TSV, wherein the first copper pad has a first coupling side. The bonded semiconductor assembly further comprises a second semiconductor substrate, opposite to the first semiconductor substrate, the second semiconductor substrate comprising a second copper pad having a second coupling side. A plurality of copper connecting elements extend between the first and second coupling sides of the first and second copper pads.

Abstract translation: 具有用于直接金属结合的微突起的接合焊盘。 在一个实施例中，半导体器件包括半导体衬底，延伸穿过半导体衬底的贯通硅通孔（TSV）以及与TSV电连接并具有耦合侧的铜焊盘。 半导体器件还包括从铜焊盘的耦合侧突出的铜元件。 在另一个实施例中，键合的半导体组件包括具有第一TSV的第一半导体衬底和与第一TSV电耦合的第一铜焊盘，其中第一铜焊盘具有第一耦合侧。 键合半导体组件还包括与第一半导体衬底相对的第二半导体衬底，第二半导体衬底包括具有第二耦合侧的第二铜衬垫。 多个铜连接元件在第一和第二铜焊盘的第一和第二耦合侧之间延伸。

公开(公告)号：US20160035648A1

公开(公告)日：2016-02-04

申请号：US14451192

申请日：2014-08-04

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Zhaohui Ma ,  Aibin Yu

IPC: H01L23/373 ,  H01L21/48 ,  H01L25/00 ,  H01L25/065 ,  H01L23/367

CPC classification number: H01L21/4882 ,  H01L21/4878 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3121 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3738 ,  H01L23/4334 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/06181 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/17519 ,  H01L2224/29191 ,  H01L2224/293 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/83104 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2225/06589 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/05432 ,  H01L2924/15311 ,  H01L2924/15738 ,  H01L2924/15787

Abstract: Semiconductor die assemblies with heat sinks are disclosed herein. In one embodiment, a semiconductor die assembly includes a stack of semiconductor dies and a mold material surrounding at least a portion of the stack of semiconductor dies. A heat sink is disposed on the stack of semiconductor dies and adjacent the mold material. The heat sink includes an exposed surface and a plurality of heat transfer features along the exposed surface that are configured to increase an exposed surface area compared to a planar surface.

Abstract translation: 本文公开了具有散热器的半导体模具组件。 在一个实施例中，半导体管芯组件包括一叠半导体管芯和围绕至少一部分半导体管芯的模具材料。 散热器设置在半导体管芯的堆叠上并与模具材料相邻。 散热器包括暴露表面和沿着暴露表面的多个传热特征，其被配置为与平坦表面相比增加暴露的表面积。

公开(公告)号：US20160013154A1

公开(公告)日：2016-01-14

申请号：US14325619

申请日：2014-07-08

Applicant: Micron Technology, Inc.

Inventor： Zhaohui Ma ,  Wei Zhou ,  Chee Chung So ,  Soo Loo Ang ,  Aibin Yu

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/304 ,  H01L21/683 ,  H01L25/00 ,  H01L21/78

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/81 ,  H01L24/94 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/18161 ,  H01L2224/03 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/014

Abstract: Methods of protecting semiconductor devices may involve forming trenches in streets between stacks of semiconductor dice on regions of a semiconductor wafer. A protective material may be positioned between the die stacks and in the trenches, after which the wafer is thinned from a side opposite the die stacks to expose the protective material in the trenches. Semiconductor devices comprising stacks of dice and corresponding base semiconductor dice comprising wafer regions are separated from one another by cutting through the protective material along the streets and in the trenches. The protective material covers at least sides of each die stack as well as side surfaces of the corresponding base semiconductor die.

Abstract translation: 保护半导体器件的方法可以包括在半导体晶片的区域上的半导体晶片的堆叠之间的街道中形成沟槽。 保护材料可以位于管芯堆叠之间和沟槽中，此后晶片从与管芯堆叠相反的一侧变薄以露出沟槽中的保护材料。 包括晶片叠的半导体器件和包括晶片区域的相应的基底半导体晶片通过沿街道和沟槽中切割保护材料而彼此分离。 保护材料覆盖每个管芯堆叠的至少一侧以及相应的基底半导体管芯的侧表面。