公开(公告)号：US07648690B2

公开(公告)日：2010-01-19

申请号：US12244724

申请日：2008-10-02

申请人： Matthias Bauer ,  Keith Doran Weeks ,  Pierre Tomasini ,  Nyles Cody

发明人： Matthias Bauer ,  Keith Doran Weeks ,  Pierre Tomasini ,  Nyles Cody

IPC分类号： C01B33/00 ,  C30B29/02

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

摘要翻译： 含有相对高含量的取代掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。 可以获得非常高的取代掺入水平，包括含有2.4原子％或更高取代碳的晶体硅膜。 通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

公开(公告)号：US20100006024A1

公开(公告)日：2010-01-14

申请号：US12556377

申请日：2009-09-09

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： C30B23/04

CPC分类号： C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

摘要翻译： 用于沉积诸如外延Ge和SiGe膜的外延膜的方法。 在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。 导致平滑，薄，相对缺陷的Ge或SiGe层。 还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

公开(公告)号：US20090026496A1

公开(公告)日：2009-01-29

申请号：US12244724

申请日：2008-10-02

申请人： Matthias Bauer ,  Keith Doran Weeks ,  Pierre Tomasini ,  Nyles Cody

发明人： Matthias Bauer ,  Keith Doran Weeks ,  Pierre Tomasini ,  Nyles Cody

IPC分类号： H01L29/737 ,  B32B5/00 ,  B32B9/00 ,  C01B31/36

CPC分类号： H01L29/7848 ,  C23C16/04 ,  C23C16/22 ,  C23C16/24 ,  C23C16/32 ,  C23C16/325 ,  C23C16/45512 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/32056 ,  H01L21/3215 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

摘要： Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

摘要翻译： 含有相对高含量的取代掺杂剂的含Si膜的方法涉及使用丙硅烷和掺杂剂前体的化学气相沉积。 可以获得非常高的取代掺入水平，包括含有2.4原子％或更高取代碳的晶体硅膜。 通过在沉积期间引入蚀刻剂气体，可将选择性地掺杂的含Si薄膜选择性地沉积在混合基板的晶体表面上。

公开(公告)号：US07289865B2

公开(公告)日：2007-10-30

申请号：US10892013

申请日：2004-07-14

申请人： Matthias Bauer

发明人： Matthias Bauer

IPC分类号： G06F19/00

CPC分类号： H01L22/20 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method to optimize semiconductor processing equipment (hardware settings and process conditions) to minimize non-uniformities within a wafer based on linescan measurements and a calculation of or prediction for a polar map. Measurements of a metrology value are taken at a number of points along a linescan (or two orthogonal linescans) on the wafer surface for a number of wafer processed in a set of experiments in which one equipment setting or process parameter is adjusted per experiment. The raw data are then normalized and weighted in accordance with the radial distance from the center of the wafer. Standard deviations of different metrology values within the wafer are then calculated. The setting can then be further adjusted to predict and to minimize the standard deviations, and therefore non-uniformity of the metrology values within the wafer, using the method without processing any additional test wafers.

摘要翻译： 一种优化半导体处理设备（硬件设置和工艺条件）的方法，用于基于线扫测量和极坐标图的计算或预测来最小化晶片内的不均匀性。 在一组实验中处理数个晶片的晶圆表面沿线（或两个正交线条）的数个点进行测量值的测量，其中每个实验调整一个设备设置或工艺参数。 然后根据距晶片中心的径向距离对原始数据进行归一化和加权。 然后计算晶片内不同计量值的标准偏差。 然后可以进一步调整该设置，以便使用该方法来预测和最小化标准偏差，从而使晶片内的度量值不均匀，而不处理任何另外的测试晶片。

公开(公告)号：US07115521B2

公开(公告)日：2006-10-03

申请号：US10993024

申请日：2004-11-18

申请人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

发明人： Paul D. Brabant ,  Joseph P. Italiano ,  Chantal J. Arena ,  Pierre Tomasini ,  Ivo Raaijmakers ,  Matthias Bauer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02661

摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

公开(公告)号：US20050051795A1

公开(公告)日：2005-03-10

申请号：US10898021

申请日：2004-07-23

申请人： Chantal Arena ,  Pierre Tomasini ,  Nyles Cody ,  Matthias Bauer

发明人： Chantal Arena ,  Pierre Tomasini ,  Nyles Cody ,  Matthias Bauer

IPC分类号： C30B25/02 ,  C30B29/06 ,  C30B29/52 ,  H01L20060101 ,  H01L21/20 ,  H01L21/205 ,  H01L29/732

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B29/52 ,  H01L21/0245 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262

摘要： A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.

摘要翻译： 松弛的硅锗结构包括使用具有大于约1托的操作压力的化学气相沉积工艺制备的硅缓冲层。 松弛的硅锗结构还包括沉积在硅缓冲层上的硅锗层。 硅锗层每平方厘米具有小于约10 7个穿透位错。 通过以降低的沉积速率沉积硅缓冲层，可以提供覆盖的硅锗层“无交叉阴极线”的表面。

公开(公告)号：US09014877B2

公开(公告)日：2015-04-21

申请号：US13525282

申请日：2012-06-16

申请人： Burkhard Gölling ,  Frank Haucke ,  Matthias Bauer ,  Wolfgang Nitsche ,  Inken Peltzer

发明人： Burkhard Gölling ,  Frank Haucke ,  Matthias Bauer ,  Wolfgang Nitsche ,  Inken Peltzer

IPC分类号： B64C15/00 ,  B64C29/00 ,  B64C23/00

CPC分类号： B64C23/005 ,  B64C9/16 ,  B64C9/38 ,  B64C13/18 ,  B64C21/04 ,  B64C29/0025 ,  Y02T50/166

摘要： An aircraft with aerofoils including a main wing and a control flap that includes an adjustment flap. The aircraft includes an actuator for the control flap, as well as a sensor device for acquiring the position of the control flap, an arrangement of flow-influencing devices for influencing the fluid that flows over a segment of the main wing, and flow-state sensor devices for measuring the flow state. The aircraft includes a flight control device connected to the sensor device for acquiring the position of the control flap and to the flow-state sensor devices, and connected to the actuator and flow-influencing devices for transmitting actuating commands, and a flight-state sensor device connected to the flight control device for transmitting flight states. The flight control device includes a function that selects the flow-influencing devices that are operated for optimizing local lift coefficients on the aerofoil, depending on the flight state.

摘要翻译： 具有机翼的飞机包括主翼和包括调节翼片的控制翼片。 飞机包括用于控制翼片的致动器，以及用于获取控制翼片的位置的传感器装置，用于影响流过主翼片段的流体的流动影响装置的布置，以及流动状态 用于测量流动状态的传感器装置。 飞机包括连接到传感器装置的飞行控制装置，用于获取控制翼片和流动状态传感器装置的位置，并连接到用于传送致动指令的致动器和流量影响装置，以及飞行状态传感器 连接到飞行控制装置的装置用于传送飞行状态。 飞行控制装置包括根据飞行状态选择用于优化机翼上的局部升力系数的流量影响装置的功能。

公开(公告)号：US08728239B2

公开(公告)日：2014-05-20

申请号：US13194799

申请日：2011-07-29

申请人： Matthias Bauer ,  Gregory M Bartlett

发明人： Matthias Bauer ,  Gregory M Bartlett

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/67017 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/67069 ,  Y10T137/0357

摘要： A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

公开(公告)号：US20130029496A1

公开(公告)日：2013-01-31

申请号：US13194799

申请日：2011-07-29

申请人： Matthias Bauer ,  Gregory M. Bartlett

发明人： Matthias Bauer ,  Gregory M. Bartlett

IPC分类号： H01L21/302 ,  H01L21/3065

CPC分类号： H01L21/67017 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/67069 ,  Y10T137/0357

摘要： A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

摘要翻译： 根据本发明的各个方面的气体面板被配置为在沉积工艺步骤期间将恒定的气体流量传送到反应室。 在一个实施例中，气体面板包括具有沉积注入管线，沉积排放管线和至少一个沉积工艺气体管线的沉积子板。 沉积注入管线将载气的质量流量提供给反应室。 每个沉积工艺气体管线可以包括一对切换阀，其被配置为选择性地将沉积工艺气体引导到反应室或排气管线。 沉积排气管线还包括切换阀，其被配置为选择性地引导载气的第二质量流量，其等于所有沉积处理气体的质量流量与反应室或排气管线的总和。 气体面板被配置为以沉积处理线的质量流率代替沉积排气管线的质量流率，使得当沉积排气管线被引导到反应器室时，沉积工艺管线被引导到排放管线 并且当沉积排气管线被引导到排气管线时，沉积工艺管线被引导到反应器室。 在整个沉积工艺步骤中，两个质量流速的取代保持了气体到反应器室的恒定质量流量。

公开(公告)号：US07939447B2

公开(公告)日：2011-05-10

申请号：US11925518

申请日：2007-10-26

申请人： Matthias Bauer ,  Pierre Tomasini

发明人： Matthias Bauer ,  Pierre Tomasini

IPC分类号： H01L21/31

CPC分类号： C30B29/06 ,  C23C16/04 ,  C23C16/45512 ,  C23C16/45561 ,  C30B25/02 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02636

摘要： A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.

摘要翻译： 一种用于沉积单晶硅膜的方法包括：提供设置在腔室内的衬底; 在化学气相沉积条件下将硅前体，含氯蚀刻剂和抑制剂源引入室中，用于减缓硅前体和含氯蚀刻剂之间的反应; 并且在衬底上选择性地沉积掺杂的含结晶的含Si膜。