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    Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry
    33.
    发明申请
    Methods of Forming Phase Change Materials and Methods of Forming Phase Change Memory Circuitry 有权
    形成相变材料的方法和形成相变存储器电路的方法

    公开(公告)号：US20140308776A1

    公开(公告)日：2014-10-16

    申请号：US14313850

    申请日：2014-06-24

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

    IPC: H01L45/00

    CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

    Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

    Confined resistance variable memory cell structures and methods
    34.
    发明授权
    Confined resistance variable memory cell structures and methods 有权
    密闭电阻变量记忆单元结构和方法

    公开(公告)号：US08716060B2

    公开(公告)日：2014-05-06

    申请号：US13894059

    申请日：2013-05-14

    Applicant: Micron Technology, Inc.

    Inventor： Brenda D. Kraus ,  Eugene P. Marsh ,  Timothy A. Quick

    IPC: H01L21/00

    CPC classification number: H01L45/1616 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

    Abstract: Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.

    Abstract translation: 本文描述了限制性电阻变量存储单元结构和方法。 形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，通过执行包括向处理室提供锗酰脒前体和第一反应物的方法 在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。

    Memory cells including a metal chalcogenide material and related methods
    37.
    发明授权
    Memory cells including a metal chalcogenide material and related methods 有权

    公开(公告)号：US10374156B2

    公开(公告)日：2019-08-06

    申请号：US15333774

    申请日：2016-10-25

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

    IPC: H01L45/02 ,  H01L45/00 ,  H01L21/02

    Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

    MEMORY CELLS INCLUDING A METAL CHALCOGENIDE MATERIAL AND RELATED METHODS
    38.
    发明申请
    MEMORY CELLS INCLUDING A METAL CHALCOGENIDE MATERIAL AND RELATED METHODS 审中-公开
    包含金属氯化铝材料的记忆细胞及相关方法

    公开(公告)号：US20170040533A1

    公开(公告)日：2017-02-09

    申请号：US15333774

    申请日：2016-10-25

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Eugene P. Marsh ,  Stefan Uhlenbrock

    IPC: H01L45/00

    CPC classification number: H01L45/141 ,  H01L21/02175 ,  H01L21/0228 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616

    Abstract: A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material.

    Abstract translation: 一种形成金属硫族化物材料的方法。 该方法包括将金属前体和硫族化物前体引入室中，并使金属前体和硫族化物前体反应以在基底上形成金属硫族化物材料。 金属前体是碱金属，碱土金属，过渡金属，后过渡金属或准金属的羧酸盐。 硫属化物前体是硫，硒或碲的氢化物，烷基或芳基前体，或硫，硒或碲的甲硅烷基化氢，甲硅烷基烷基或甲硅烷基芳基前体。 还公开了形成包含金属硫族化物材料的记忆单元的方法，以及包括金属硫族化物材料的存储单元也是如此。

    HORIZONTALLY ORIENTED AND VERTICALLY STACKED MEMORY CELLS
    40.
    发明申请
    HORIZONTALLY ORIENTED AND VERTICALLY STACKED MEMORY CELLS 有权
    水平方向和垂直堆叠的记忆细胞

    公开(公告)号：US20150221866A1

    公开(公告)日：2015-08-06

    申请号：US14688502

    申请日：2015-04-16

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Eugene P. Marsh

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2463 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

    Abstract: Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

    Abstract translation: 本文描述了水平方向和垂直堆叠的存储器单元。 一个或多个方法实施例包括形成具有第一绝缘体材料的垂直堆叠，第一绝缘体材料上的第一存储单元材料，第一存储单元材料上的第二绝缘体材料，第二绝缘体材料上的第二存储单元材料，以及 在所述第二存储单元材料上的第三绝缘体材料，形成邻近所述第一存储单元材料的第一侧的电极和所述第二存储单元材料的第一侧，以及在所述第一存储单元材料的第二侧附近形成电极，以及 第二存储单元材料的第二侧。

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