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    Light emitting diodes with n-polarity and associated methods of manufacturing
    31.
    发明授权
    Light emitting diodes with n-polarity and associated methods of manufacturing 有权

    公开(公告)号：US11049994B2

    公开(公告)日：2021-06-29

    申请号：US15631836

    申请日：2017-06-23

    Applicant: Micron Technology, Inc.

    Inventor： Zaiyuan Ren ,  Thomas Gehrke

    IPC: H01L33/00 ,  H01L33/16 ,  H01L33/32

    Abstract: Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.

    Light emitting devices with built-in chromaticity conversion and methods of manufacturing
    35.
    发明授权
    Light emitting devices with built-in chromaticity conversion and methods of manufacturing 有权
    具有内置色度转换和制造方法的发光装置

    公开(公告)号：US09184336B2

    公开(公告)日：2015-11-10

    申请号：US14489344

    申请日：2014-09-17

    Applicant: Micron Technology, Inc.

    Inventor： Cem Basceri ,  Thomas Gehrke ,  Charles M. Watkins

    IPC: H01L21/00 ,  H01L33/00 ,  H01L33/50 ,  H01L33/06 ,  H01L33/08 ,  H01L33/38

    CPC classification number: H01L33/0075 ,  H01L33/005 ,  H01L33/06 ,  H01L33/08 ,  H01L33/38 ,  H01L33/502 ,  H01L33/508 ,  H01L2933/0033 ,  H01L2933/0041

    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.

    Abstract translation: 本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。 在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。 然后在第二半导体材料上形成转换材料。 转换材料具有晶体结构并且被配置为产生第二发射。 该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。

    DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES
    36.
    发明申请
    DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES 有权
    与半导体器件中的移除导通相关的器件，系统和方法

    公开(公告)号：US20150318388A1

    公开(公告)日：2015-11-05

    申请号：US14796974

    申请日：2015-07-10

    Applicant: Micron Technology, Inc.

    Inventor： Martin F. Schubert ,  Vladimir Odnoblyudov ,  Cem Basceri ,  Thomas Gehrke

    IPC: H01L29/778 ,  H01L29/06 ,  H01L29/205

    CPC classification number: H01L29/42316 ,  H01L29/0603 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4175 ,  H01L29/7786 ,  H01L29/7787 ,  H01L2224/16227

    Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.

    Abstract translation: 本文公开了用于制造半导体器件的半导体器件和方法。 根据特定实施例配置的方法包括从外延衬底形成半导体材料的堆叠，其中半导体材料堆叠限定异质结，并且其中半导体材料和外延衬底的堆叠进一步限定主体区域，其包括 邻近外延衬底的半导体堆叠部分。 该方法还包括将半导体材料堆叠附接到载体，其中载体被配置为提供到异质结的信号路径。 该方法还包括通过去除外延衬底来暴露体区。

    LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
    38.
    发明申请
    LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING 有权
    发光二极管及相关制造方法

    公开(公告)号：US20150028347A1

    公开(公告)日：2015-01-29

    申请号：US14510914

    申请日：2014-10-09

    Applicant: Micron Technology, Inc.

    Inventor： Scott D. Schellhammer ,  Scott E. Sills ,  Lifang Xu ,  Thomas Gehrke ,  Zaiyuan Ren ,  Anton J. De Villiers

    IPC: H01L33/24 ,  H01L33/22 ,  H01L33/16 ,  H01L33/32

    CPC classification number: H01L33/24 ,  H01L33/007 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

    Abstract: Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.

    Abstract translation: 本文公开了发光二极管和相关的制造方法。 在一个实施例中，发光二极管（LED）包括衬底，由衬底承载的半导体材料和靠近半导体材料的有源区。 半导体材料具有靠近基板的第一表面和与第一表面相对的第二表面。 半导体材料的第二表面通常是非平面的，并且有源区域通常符合半导体材料的非平面第二表面。

    SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING
    39.
    发明申请
    SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCIATED METHODS OF MANUFACTURING 有权
    无转换器材料和相关制造方法的固态照明装置

    公开(公告)号：US20130342133A1

    公开(公告)日：2013-12-26

    申请号：US14010944

    申请日：2013-08-27

    Applicant: Micron Technology, Inc.

    Inventor： Zaiyuan Ren ,  Thomas Gehrke

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  C30B25/00 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32

    Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

    Abstract translation: 本文公开了可以产生没有荧光体的白光的固态照明装置。 在一个实施例中，固态照明装置包括第一半导体材料，与第一半导体材料间隔开的第二半导体材料以及第一和第二半导体材料之间的有源区。 有源区包括具有第一中心波长的第一子区和具有不同于第一中心波长的第二中心波长的第二子区。

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