公开(公告)号：US20080295763A1

公开(公告)日：2008-12-04

申请号：US12155108

申请日：2008-05-29

申请人： Koji Hirata ,  Shiro Yamazaki

发明人： Koji Hirata ,  Shiro Yamazaki

IPC分类号： C30B7/08

CPC分类号： C30B29/403 ,  C30B9/10 ,  Y10T117/1024

摘要： A Group III nitride semiconductor crystal is grown according to a flux method. After completion of the crystal-growing process, Na is discharged from a crucible by a recovery device when the temperature of the crucible is 100° C. or higher, and is held in a holding vessel in a liquid state. The recovered Na can be drawn from the holding vessel via a faucet. Na remaining after completion of the crystal-growing process does not contain impurities of high vapor pressure, and is thus of high purity. Therefore, reuse, as flux, of the recovered Na enables manufacture of a Group III nitride semiconductor whose concentration of impurities is low.

摘要翻译： 根据通量法生长III族氮化物半导体晶体。 在晶体生长过程完成之后，当坩埚的温度为100℃或更高时，Na通过回收装置从坩埚中排出，并保持在液态的保持容器中。 回收的Na可以通过龙头从容器中取出。 在晶体生长过程完成后残留的Na不含有高蒸汽压的杂质，因此具有高纯度。 因此，作为助熔剂回收的Na的再利用可以制造其杂质浓度低的III族氮化物半导体。

公开(公告)号：US20110101412A1

公开(公告)日：2011-05-05

申请号：US12929231

申请日：2011-01-10

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.

摘要翻译： 制造III族氮化物化合物的发光半导体器件的方法包括形成N型导电的N层，N层包括氮化镓，形成满足式（Al x Ga 1 -x3）y3In1-y3N，其中在N层上形成满足公式的III族氮化物化合物半导体的发射层Al x1Gay1In1，其中0和nlE; x3和nlE; 1,0和n1E; y3和nlE; 1和0＆lt; n1E; x3 + y3＆ -x1-y1N，其中0＆nlE; x1＆nlE; 1,0和nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE; 1在高载流子浓度层N +层上，将Si和Zn掺杂到发射层中，形成P层 在发射层上的P型导电，包含满足式Al x Ga 1-x 2 N的氮化铝镓的P层，其中0＆lt; n1E; x2＆nlE; 1，并且在P型上形成P型导电的接触层 层，接触层包括氮化镓。

公开(公告)号：US07867800B2

公开(公告)日：2011-01-11

申请号：US12003173

申请日：2007-12-20

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2）的厚度为500埃。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 发射层（5）的厚度约为0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×1017 / cm3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

公开(公告)号：US06265726B1

公开(公告)日：2001-07-24

申请号：US09379621

申请日：1999-08-24

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 &mgr;m thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 &mgr;m thickness. The p-layer 6 has about a 1.0 &mgr;m thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

公开(公告)号：US6005258A

公开(公告)日：1999-12-21

申请号：US806646

申请日：1997-02-26

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L29/06

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/40 ,  H01L33/382 ,  H01L33/385

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x3 Ga.sub.1-x3).sub.y3 In.sub.1-y3 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N emission layer (5), and a Mg-doped (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N p-layer (6). The AlN layer (2)--is 500 .ANG. in thickness. The GaN N.sup.+ -layer (3) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cm.sup.3. The n.sup.+ -layer (4) is about 2.0 .mu.m in thickness and has an electron concentration of about 2.times.10.sup.18 /cn.sup.3. The emission layer (5) is about 0.5 .mu.m in thickness. The p-layer 6 is about 1.0 .mu.m in thickness and has a hole concentration of about 2.times.10.sup.17 /cm.sup.3. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8) from each other. The composition ration of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n.sup.+ -layer (3). The LED (10) is designed to improve luminous intensity and to obtain a purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2） - 厚度为500 ANGSTROM。 GaN N +层（3）的厚度约为2.0μm，电子浓度约为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度约为2×10 18 / cn 3。 发射层（5）的厚度约为0.5μm。 p层6的厚度为约1.0μm，并且具有约2×10 17 / cm 3的空穴浓度。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 沟槽（9）将电极（7,8）彼此电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比来满足n +层（3）中的GaN的晶格常数。 LED（10）被设计成改善发光强度并获得更纯的蓝色。

公开(公告)号：US20060273324A1

公开(公告)日：2006-12-07

申请号：US10566211

申请日：2004-07-26

申请人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

发明人： Makoto Asai ,  Shiro Yamazaki ,  Takahiro Kozawa ,  Mitsuhisa Narukawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L24/32 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/10158 ,  H01L2924/00014 ,  H01L2924/00

摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.

摘要翻译： 半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。 在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和 总共有5层MQW结构。 在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

公开(公告)号：US07052979B2

公开(公告)日：2006-05-30

申请号：US10467566

申请日：2002-02-12

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0066 ,  H01L33/007

摘要： When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.

摘要翻译： 当在包括大量投影部分的基底基板上生长由III族氮化物化合物制成的衬底层（期望的半导体晶体）时，可以在每个突出部分之间形成其中不沉积半导体晶体的空腔，尽管它取决于 条件如每个投影部分的尺寸，每个投影部分之间的间隔和晶体生长。 因此，当基板层的厚度与突出部分的高度相比足够大时，内应力或外应力变得更容易集中于投影部分。 结果，这种应力特别地作用于朝向投影部分的剪切应力。 当剪切应力变大时，突出部分破裂。 因此，利用剪切应力使得能够容易地分离基底和基底层。 形成空穴越大，应力越倾向于集中到突出部分，从而能够更牢固地分离基底基底和基底层。

公开(公告)号：US06984536B2

公开(公告)日：2006-01-10

申请号：US10052347

申请日：2002-01-23

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L21/20

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

公开(公告)号：US5129942A

公开(公告)日：1992-07-14

申请号：US667617

申请日：1991-03-08

申请人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

发明人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

IPC分类号： A01N47/36 ,  C07D207/50 ,  C07D403/12 ,  C07D521/00

CPC分类号： C07D521/00 ,  A01N47/36 ,  C07D207/50 ,  C07D403/12

摘要： Disclosed herein are N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R is Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is Cl or C.sub.1 -C.sub.3 alkoxyl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives as active ingredients.

公开(公告)号：US4992093A

公开(公告)日：1991-02-12

申请号：US357422

申请日：1989-05-25

申请人： Satoru Kumazawa ,  Atsushi Ito ,  Nobuo Sato ,  Toshihide Saishoji ,  Masahiro Hamada ,  Shiro Yamazaki ,  Hiroyuki Enari

发明人： Satoru Kumazawa ,  Atsushi Ito ,  Nobuo Sato ,  Toshihide Saishoji ,  Masahiro Hamada ,  Shiro Yamazaki ,  Hiroyuki Enari

IPC分类号： A01N43/50 ,  A01N43/653 ,  C07D233/58 ,  C07D233/60 ,  C07D249/08 ,  C07D521/00

CPC分类号： C07D231/12 ,  A01N43/50 ,  A01N43/653 ,  C07D233/56 ,  C07D249/08

摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivatives of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.